CA1058827A - Method of preparing galliumphosphide - Google Patents
Method of preparing galliumphosphideInfo
- Publication number
- CA1058827A CA1058827A CA235,390A CA235390A CA1058827A CA 1058827 A CA1058827 A CA 1058827A CA 235390 A CA235390 A CA 235390A CA 1058827 A CA1058827 A CA 1058827A
- Authority
- CA
- Canada
- Prior art keywords
- phosphorus
- nitride
- temperature
- gallium
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910005540 GaP Inorganic materials 0.000 title claims abstract description 12
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 32
- 239000011574 phosphorus Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 15
- -1 phosphorus nitride Chemical class 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 238000010494 dissociation reaction Methods 0.000 claims description 3
- 230000005593 dissociations Effects 0.000 claims description 3
- 238000000859 sublimation Methods 0.000 claims description 3
- 230000008022 sublimation Effects 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 235000014786 phosphorus Nutrition 0.000 description 20
- 238000002360 preparation method Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003708 ampul Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 101100508071 Solanum lycopersicum PIIF gene Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431524A FR2285341A1 (fr) | 1974-09-18 | 1974-09-18 | Procede de synthese de phosphure de gallium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1058827A true CA1058827A (en) | 1979-07-24 |
Family
ID=9143199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA235,390A Expired CA1058827A (en) | 1974-09-18 | 1975-09-11 | Method of preparing galliumphosphide |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4036932A (enExample) |
| JP (1) | JPS5527001B2 (enExample) |
| CA (1) | CA1058827A (enExample) |
| DE (1) | DE2540175C3 (enExample) |
| FR (1) | FR2285341A1 (enExample) |
| GB (1) | GB1512105A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2018016309A (es) | 2016-07-05 | 2019-06-20 | Ineos Americas Llc | Metodo y aparato para recuperar agentes absorbentes en el tratamiento de gas acido. |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
| US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
| JPS4915901B1 (enExample) * | 1969-09-10 | 1974-04-18 |
-
1974
- 1974-09-18 FR FR7431524A patent/FR2285341A1/fr active Granted
-
1975
- 1975-09-10 DE DE2540175A patent/DE2540175C3/de not_active Expired
- 1975-09-11 CA CA235,390A patent/CA1058827A/en not_active Expired
- 1975-09-15 GB GB37863/75A patent/GB1512105A/en not_active Expired
- 1975-09-15 US US05/613,246 patent/US4036932A/en not_active Expired - Lifetime
- 1975-09-17 JP JP11247275A patent/JPS5527001B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1512105A (en) | 1978-05-24 |
| US4036932A (en) | 1977-07-19 |
| DE2540175B2 (de) | 1980-06-12 |
| FR2285341A1 (fr) | 1976-04-16 |
| JPS5527001B2 (enExample) | 1980-07-17 |
| DE2540175A1 (de) | 1976-04-01 |
| JPS5155798A (enExample) | 1976-05-17 |
| FR2285341B1 (enExample) | 1976-12-31 |
| DE2540175C3 (de) | 1981-02-19 |
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