JPS5527001B2 - - Google Patents
Info
- Publication number
- JPS5527001B2 JPS5527001B2 JP11247275A JP11247275A JPS5527001B2 JP S5527001 B2 JPS5527001 B2 JP S5527001B2 JP 11247275 A JP11247275 A JP 11247275A JP 11247275 A JP11247275 A JP 11247275A JP S5527001 B2 JPS5527001 B2 JP S5527001B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7431524A FR2285341A1 (fr) | 1974-09-18 | 1974-09-18 | Procede de synthese de phosphure de gallium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5155798A JPS5155798A (enExample) | 1976-05-17 |
| JPS5527001B2 true JPS5527001B2 (enExample) | 1980-07-17 |
Family
ID=9143199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11247275A Expired JPS5527001B2 (enExample) | 1974-09-18 | 1975-09-17 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4036932A (enExample) |
| JP (1) | JPS5527001B2 (enExample) |
| CA (1) | CA1058827A (enExample) |
| DE (1) | DE2540175C3 (enExample) |
| FR (1) | FR2285341A1 (enExample) |
| GB (1) | GB1512105A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MX2018016309A (es) | 2016-07-05 | 2019-06-20 | Ineos Americas Llc | Metodo y aparato para recuperar agentes absorbentes en el tratamiento de gas acido. |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
| US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
| JPS4915901B1 (enExample) * | 1969-09-10 | 1974-04-18 |
-
1974
- 1974-09-18 FR FR7431524A patent/FR2285341A1/fr active Granted
-
1975
- 1975-09-10 DE DE2540175A patent/DE2540175C3/de not_active Expired
- 1975-09-11 CA CA235,390A patent/CA1058827A/en not_active Expired
- 1975-09-15 GB GB37863/75A patent/GB1512105A/en not_active Expired
- 1975-09-15 US US05/613,246 patent/US4036932A/en not_active Expired - Lifetime
- 1975-09-17 JP JP11247275A patent/JPS5527001B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1512105A (en) | 1978-05-24 |
| US4036932A (en) | 1977-07-19 |
| DE2540175B2 (de) | 1980-06-12 |
| CA1058827A (en) | 1979-07-24 |
| FR2285341A1 (fr) | 1976-04-16 |
| DE2540175A1 (de) | 1976-04-01 |
| JPS5155798A (enExample) | 1976-05-17 |
| FR2285341B1 (enExample) | 1976-12-31 |
| DE2540175C3 (de) | 1981-02-19 |