CA1036258A - Charge storage diode with graded defect density photocapacitive layer - Google Patents

Charge storage diode with graded defect density photocapacitive layer

Info

Publication number
CA1036258A
CA1036258A CA239,818A CA239818A CA1036258A CA 1036258 A CA1036258 A CA 1036258A CA 239818 A CA239818 A CA 239818A CA 1036258 A CA1036258 A CA 1036258A
Authority
CA
Canada
Prior art keywords
photocapacitive
layer
charge storage
defect density
storage diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA239,818A
Other languages
English (en)
French (fr)
Inventor
William P. Bleha (Jr.)
Lewis M. Fraas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of CA1036258A publication Critical patent/CA1036258A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
    • G02F1/1354—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied having a particular photoconducting structure or material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
CA239,818A 1974-11-18 1975-11-17 Charge storage diode with graded defect density photocapacitive layer Expired CA1036258A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52459674A 1974-11-18 1974-11-18
US05/625,331 US3976361A (en) 1974-11-18 1975-10-22 Charge storage diode with graded defect density photocapacitive layer

Publications (1)

Publication Number Publication Date
CA1036258A true CA1036258A (en) 1978-08-08

Family

ID=27061549

Family Applications (1)

Application Number Title Priority Date Filing Date
CA239,818A Expired CA1036258A (en) 1974-11-18 1975-11-17 Charge storage diode with graded defect density photocapacitive layer

Country Status (9)

Country Link
US (1) US3976361A (nl)
JP (1) JPS5234911B2 (nl)
CA (1) CA1036258A (nl)
DE (1) DE2550933C2 (nl)
FR (1) FR2291611A1 (nl)
GB (1) GB1492289A (nl)
IL (1) IL48418A (nl)
IT (1) IT1052257B (nl)
NL (1) NL168953C (nl)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032954A (en) * 1976-06-01 1977-06-28 Hughes Aircraft Company Silicon single crystal charge storage diode
US4106853A (en) * 1976-07-28 1978-08-15 Hughes Aircraft Company Method and apparatus for increasing contrast ratio of the stored image in a storage mode light valve
US4114991A (en) * 1976-12-22 1978-09-19 Hughes Aircraft Company Visible-to-infrared converter light valve
US4206979A (en) * 1977-03-28 1980-06-10 Grumman Aerospace Corporation Electro-optic modulator
US4093357A (en) * 1977-04-05 1978-06-06 Hughes Aircraft Company Cermet interface for electro-optical devices
IL54544A0 (en) * 1977-05-02 1978-07-31 Hughes Aircraft Co Liquid crystal light valve
US4191454A (en) * 1977-06-20 1980-03-04 Hughes Aircraft Company Continuous silicon MOS AC light valve substrate
GB1604206A (en) * 1977-06-20 1981-12-02 Hughes Aircraft Co Ac driven liquid crystal light valve
JPS5464494A (en) * 1977-10-31 1979-05-24 Sharp Corp Liquid crystal display unit
US4371232A (en) * 1977-12-27 1983-02-01 The United States Of America As Represented By The Secretary Of The Navy Graded gap semiconductor optical device
US4191452A (en) * 1977-12-28 1980-03-04 Hughes Aircraft Company AC silicon PN junction photodiode light-valve substrate
US4443064A (en) * 1979-11-30 1984-04-17 Hughes Aircraft Company High resolution AC silicon MOS-light-valve substrate
US4344668A (en) * 1980-03-17 1982-08-17 Hughes Aircraft Company Fiber optic light traps for electro-optical display devices
US4522469A (en) * 1984-01-09 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Liquid crystal light valve structures
US4679910A (en) * 1985-03-20 1987-07-14 Hughes Aircraft Company Dual liquid-crystal cell-based visible-to-infrared dynamic image converter
US4707077A (en) * 1986-01-30 1987-11-17 Hughes Aircraft Company Real time image subtraction with a single liquid crystal light valve
US4925276A (en) * 1987-05-01 1990-05-15 Electrohome Limited Liquid crystal light valve utilizing hydrogenated amorphous silicon photodiode
US4799773A (en) * 1987-08-27 1989-01-24 Hughes Aircraft Company Liquid crystal light valve and associated bonding structure
GB8901666D0 (en) * 1989-01-26 1989-03-15 Audas Robert D Signal spectrum
WO1991014962A1 (en) * 1990-03-20 1991-10-03 Everex Systems, Inc. High performance light valve having a bilayer photoconductor structure
US5153761A (en) * 1990-03-20 1992-10-06 Everex Systems, Inc. High performance light valve having double layer photoconductor
JPH0833549B2 (ja) * 1990-04-27 1996-03-29 シャープ株式会社 光書き込み型液晶表示素子
US5153759A (en) * 1991-04-01 1992-10-06 Xerox Corporation Optically addressed light valve system
JP2809543B2 (ja) * 1992-03-10 1998-10-08 シャープ株式会社 光導電型液晶ライトバルブ
JPH0643482A (ja) * 1992-07-24 1994-02-18 Matsushita Electric Ind Co Ltd 空間光変調素子およびその製造方法
US5309262A (en) * 1992-12-23 1994-05-03 Xerox Corporation Optically addressed light valve system with two dielectric mirrors separated by a light separating element
WO1996014206A1 (en) * 1994-11-08 1996-05-17 Spectra Science Corporation Semiconductor nanocrystal display materials and display apparatus employing same
US5903247A (en) * 1996-07-19 1999-05-11 The Regents Of The University Of California Servo controlled liquid crystal windows
US6005692A (en) * 1997-05-29 1999-12-21 Stahl; Thomas D. Light-emitting diode constructions
DE10061743A1 (de) * 2000-01-17 2001-07-19 Siemens Ag Verfahren zur Verbesserung der optischen Trennung von Leuchtstoffschichten
US7203234B1 (en) 2000-03-31 2007-04-10 Sharp Laboratories Of America, Inc. Method of directional filtering for post-processing compressed video
WO2004100272A1 (en) * 2003-04-29 2004-11-18 Midwest Research Institute Ultra-high current density thin-film si diode
KR100560309B1 (ko) * 2003-12-31 2006-03-14 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824002A (en) * 1972-12-04 1974-07-16 Hughes Aircraft Co Alternating current liquid crystal light value

Also Published As

Publication number Publication date
IL48418A (en) 1977-03-31
NL7513484A (nl) 1976-05-20
JPS5234911B2 (nl) 1977-09-06
NL168953B (nl) 1981-12-16
FR2291611A1 (fr) 1976-06-11
US3976361A (en) 1976-08-24
DE2550933A1 (de) 1976-05-26
NL168953C (nl) 1982-05-17
IL48418A0 (en) 1976-01-30
FR2291611B1 (nl) 1977-12-16
GB1492289A (en) 1977-11-16
DE2550933C2 (de) 1983-10-27
IT1052257B (it) 1981-06-20
JPS51102482A (nl) 1976-09-09

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