CA1036258A - Diode a memoire avec couche photocapacitive a densite de defaut variable - Google Patents
Diode a memoire avec couche photocapacitive a densite de defaut variableInfo
- Publication number
- CA1036258A CA1036258A CA239,818A CA239818A CA1036258A CA 1036258 A CA1036258 A CA 1036258A CA 239818 A CA239818 A CA 239818A CA 1036258 A CA1036258 A CA 1036258A
- Authority
- CA
- Canada
- Prior art keywords
- photocapacitive
- layer
- charge storage
- defect density
- storage diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007547 defect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/135—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied
- G02F1/1354—Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied having a particular photoconducting structure or material
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52459674A | 1974-11-18 | 1974-11-18 | |
US05/625,331 US3976361A (en) | 1974-11-18 | 1975-10-22 | Charge storage diode with graded defect density photocapacitive layer |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1036258A true CA1036258A (fr) | 1978-08-08 |
Family
ID=27061549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA239,818A Expired CA1036258A (fr) | 1974-11-18 | 1975-11-17 | Diode a memoire avec couche photocapacitive a densite de defaut variable |
Country Status (9)
Country | Link |
---|---|
US (1) | US3976361A (fr) |
JP (1) | JPS5234911B2 (fr) |
CA (1) | CA1036258A (fr) |
DE (1) | DE2550933C2 (fr) |
FR (1) | FR2291611A1 (fr) |
GB (1) | GB1492289A (fr) |
IL (1) | IL48418A (fr) |
IT (1) | IT1052257B (fr) |
NL (1) | NL168953C (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032954A (en) * | 1976-06-01 | 1977-06-28 | Hughes Aircraft Company | Silicon single crystal charge storage diode |
US4106853A (en) * | 1976-07-28 | 1978-08-15 | Hughes Aircraft Company | Method and apparatus for increasing contrast ratio of the stored image in a storage mode light valve |
US4114991A (en) * | 1976-12-22 | 1978-09-19 | Hughes Aircraft Company | Visible-to-infrared converter light valve |
US4206979A (en) * | 1977-03-28 | 1980-06-10 | Grumman Aerospace Corporation | Electro-optic modulator |
US4093357A (en) * | 1977-04-05 | 1978-06-06 | Hughes Aircraft Company | Cermet interface for electro-optical devices |
IL54544A0 (en) * | 1977-05-02 | 1978-07-31 | Hughes Aircraft Co | Liquid crystal light valve |
GB1604206A (en) * | 1977-06-20 | 1981-12-02 | Hughes Aircraft Co | Ac driven liquid crystal light valve |
US4191454A (en) * | 1977-06-20 | 1980-03-04 | Hughes Aircraft Company | Continuous silicon MOS AC light valve substrate |
JPS5464494A (en) * | 1977-10-31 | 1979-05-24 | Sharp Corp | Liquid crystal display unit |
US4371232A (en) * | 1977-12-27 | 1983-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Graded gap semiconductor optical device |
US4191452A (en) * | 1977-12-28 | 1980-03-04 | Hughes Aircraft Company | AC silicon PN junction photodiode light-valve substrate |
US4443064A (en) * | 1979-11-30 | 1984-04-17 | Hughes Aircraft Company | High resolution AC silicon MOS-light-valve substrate |
US4344668A (en) * | 1980-03-17 | 1982-08-17 | Hughes Aircraft Company | Fiber optic light traps for electro-optical display devices |
US4522469A (en) * | 1984-01-09 | 1985-06-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Liquid crystal light valve structures |
US4679910A (en) * | 1985-03-20 | 1987-07-14 | Hughes Aircraft Company | Dual liquid-crystal cell-based visible-to-infrared dynamic image converter |
US4707077A (en) * | 1986-01-30 | 1987-11-17 | Hughes Aircraft Company | Real time image subtraction with a single liquid crystal light valve |
US4925276A (en) * | 1987-05-01 | 1990-05-15 | Electrohome Limited | Liquid crystal light valve utilizing hydrogenated amorphous silicon photodiode |
US4799773A (en) * | 1987-08-27 | 1989-01-24 | Hughes Aircraft Company | Liquid crystal light valve and associated bonding structure |
GB8901666D0 (en) * | 1989-01-26 | 1989-03-15 | Audas Robert D | Signal spectrum |
WO1991014962A1 (fr) * | 1990-03-20 | 1991-10-03 | Everex Systems, Inc. | Valve de lumiere a haute performance comprenant une structure photoconductrice a deux couches |
US5153761A (en) * | 1990-03-20 | 1992-10-06 | Everex Systems, Inc. | High performance light valve having double layer photoconductor |
JPH0833549B2 (ja) * | 1990-04-27 | 1996-03-29 | シャープ株式会社 | 光書き込み型液晶表示素子 |
US5153759A (en) * | 1991-04-01 | 1992-10-06 | Xerox Corporation | Optically addressed light valve system |
JP2809543B2 (ja) * | 1992-03-10 | 1998-10-08 | シャープ株式会社 | 光導電型液晶ライトバルブ |
JPH0643482A (ja) * | 1992-07-24 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 空間光変調素子およびその製造方法 |
US5309262A (en) * | 1992-12-23 | 1994-05-03 | Xerox Corporation | Optically addressed light valve system with two dielectric mirrors separated by a light separating element |
AU3894595A (en) * | 1994-11-08 | 1996-05-31 | Spectra Science Corporation | Semiconductor nanocrystal display materials and display apparatus employing same |
US5903247A (en) * | 1996-07-19 | 1999-05-11 | The Regents Of The University Of California | Servo controlled liquid crystal windows |
US6005692A (en) * | 1997-05-29 | 1999-12-21 | Stahl; Thomas D. | Light-emitting diode constructions |
DE10061743A1 (de) * | 2000-01-17 | 2001-07-19 | Siemens Ag | Verfahren zur Verbesserung der optischen Trennung von Leuchtstoffschichten |
US7203234B1 (en) | 2000-03-31 | 2007-04-10 | Sharp Laboratories Of America, Inc. | Method of directional filtering for post-processing compressed video |
US7361406B2 (en) * | 2003-04-29 | 2008-04-22 | Qi Wang | Ultra-high current density thin-film Si diode |
KR100560309B1 (ko) * | 2003-12-31 | 2006-03-14 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3824002A (en) * | 1972-12-04 | 1974-07-16 | Hughes Aircraft Co | Alternating current liquid crystal light value |
-
1975
- 1975-10-22 US US05/625,331 patent/US3976361A/en not_active Expired - Lifetime
- 1975-11-04 IL IL48418A patent/IL48418A/en unknown
- 1975-11-13 DE DE2550933A patent/DE2550933C2/de not_active Expired
- 1975-11-14 IT IT52212/75A patent/IT1052257B/it active
- 1975-11-17 CA CA239,818A patent/CA1036258A/fr not_active Expired
- 1975-11-17 FR FR7535089A patent/FR2291611A1/fr active Granted
- 1975-11-17 GB GB47279/75A patent/GB1492289A/en not_active Expired
- 1975-11-18 JP JP13784675A patent/JPS5234911B2/ja not_active Expired
- 1975-11-18 NL NLAANVRAGE7513484,A patent/NL168953C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB1492289A (en) | 1977-11-16 |
JPS51102482A (fr) | 1976-09-09 |
IT1052257B (it) | 1981-06-20 |
JPS5234911B2 (fr) | 1977-09-06 |
DE2550933A1 (de) | 1976-05-26 |
NL168953C (nl) | 1982-05-17 |
NL7513484A (nl) | 1976-05-20 |
DE2550933C2 (de) | 1983-10-27 |
FR2291611B1 (fr) | 1977-12-16 |
FR2291611A1 (fr) | 1976-06-11 |
US3976361A (en) | 1976-08-24 |
IL48418A (en) | 1977-03-31 |
NL168953B (nl) | 1981-12-16 |
IL48418A0 (en) | 1976-01-30 |
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