CA1023875A - Method of producing high value ion implanted resistors - Google Patents

Method of producing high value ion implanted resistors

Info

Publication number
CA1023875A
CA1023875A CA218,279A CA218279A CA1023875A CA 1023875 A CA1023875 A CA 1023875A CA 218279 A CA218279 A CA 218279A CA 1023875 A CA1023875 A CA 1023875A
Authority
CA
Canada
Prior art keywords
high value
producing high
ion implanted
value ion
implanted resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA218,279A
Other languages
English (en)
French (fr)
Other versions
CA218279S (en
Inventor
Billy L. Crowder
Swie-In Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1023875A publication Critical patent/CA1023875A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10P30/40—
    • H10W20/40—
CA218,279A 1974-03-04 1975-01-17 Method of producing high value ion implanted resistors Expired CA1023875A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448100A US3922708A (en) 1974-03-04 1974-03-04 Method of producing high value ion implanted resistors

Publications (1)

Publication Number Publication Date
CA1023875A true CA1023875A (en) 1978-01-03

Family

ID=23778996

Family Applications (1)

Application Number Title Priority Date Filing Date
CA218,279A Expired CA1023875A (en) 1974-03-04 1975-01-17 Method of producing high value ion implanted resistors

Country Status (7)

Country Link
US (1) US3922708A (enExample)
JP (1) JPS50120783A (enExample)
CA (1) CA1023875A (enExample)
DE (1) DE2458734A1 (enExample)
FR (1) FR2263608B1 (enExample)
GB (1) GB1451296A (enExample)
IT (1) IT1031241B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2446088A1 (de) * 1974-09-26 1976-04-01 Siemens Ag Statisches speicherelement und verfahren zu seiner herstellung
US4053922A (en) * 1976-05-19 1977-10-11 General Electric Company Light triggered thyristor having controlled turn on delay
US4249196A (en) * 1978-08-21 1981-02-03 Burroughs Corporation Integrated circuit module with integral capacitor
JPS57121254A (en) * 1981-01-21 1982-07-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57201050A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Multilayer wiring structure
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
US4722913A (en) * 1986-10-17 1988-02-02 Thomson Components-Mostek Corporation Doped semiconductor vias to contacts
US4766450A (en) * 1987-07-17 1988-08-23 Xerox Corporation Charging deposition control in electrographic thin film writting head
US4868537A (en) * 1987-09-10 1989-09-19 Siliconix Incorporated Doped SiO2 resistor and method of forming same
US4950620A (en) * 1988-09-30 1990-08-21 Dallas Semiconductor Corp. Process for making integrated circuit with doped silicon dioxide load elements
JPH0756883B2 (ja) * 1990-05-25 1995-06-14 工業技術院長 電気的接続の形成方法とこれを用いて形成される集積回路
US6614088B1 (en) 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
US12414312B2 (en) * 2021-12-20 2025-09-09 International Business Machines Corporation Back-end-of-line thin film resistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3682700A (en) * 1968-08-15 1972-08-08 Gale Ind Inc Method of imparting electrical conductivity to an amorphous substrate by ion implantation,and the product thereof
DE1812130C3 (de) * 1968-12-02 1975-01-16 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halbleiter- oder Dickfilmanordnung
US3614480A (en) * 1969-10-13 1971-10-19 Bell Telephone Labor Inc Temperature-stabilized electronic devices
US3620945A (en) * 1970-01-19 1971-11-16 Texas Instruments Inc Methods of making a composite dielectric body
US3693011A (en) * 1971-02-02 1972-09-19 Hughes Aircraft Co Ion implanted bolometer
JPS4884580A (enExample) * 1972-02-12 1973-11-09

Also Published As

Publication number Publication date
JPS50120783A (enExample) 1975-09-22
GB1451296A (en) 1976-09-29
US3922708A (en) 1975-11-25
IT1031241B (it) 1979-04-30
FR2263608A1 (enExample) 1975-10-03
FR2263608B1 (enExample) 1976-12-31
DE2458734A1 (de) 1975-09-11

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