JPS50120783A - - Google Patents

Info

Publication number
JPS50120783A
JPS50120783A JP50015527A JP1552775A JPS50120783A JP S50120783 A JPS50120783 A JP S50120783A JP 50015527 A JP50015527 A JP 50015527A JP 1552775 A JP1552775 A JP 1552775A JP S50120783 A JPS50120783 A JP S50120783A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50015527A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50120783A publication Critical patent/JPS50120783A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10P30/40—
    • H10W20/40—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP50015527A 1974-03-04 1975-02-07 Pending JPS50120783A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US448100A US3922708A (en) 1974-03-04 1974-03-04 Method of producing high value ion implanted resistors

Publications (1)

Publication Number Publication Date
JPS50120783A true JPS50120783A (enExample) 1975-09-22

Family

ID=23778996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50015527A Pending JPS50120783A (enExample) 1974-03-04 1975-02-07

Country Status (7)

Country Link
US (1) US3922708A (enExample)
JP (1) JPS50120783A (enExample)
CA (1) CA1023875A (enExample)
DE (1) DE2458734A1 (enExample)
FR (1) FR2263608B1 (enExample)
GB (1) GB1451296A (enExample)
IT (1) IT1031241B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121254A (en) * 1981-01-21 1982-07-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57201050A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Multilayer wiring structure
JPH0430451A (ja) * 1990-05-25 1992-02-03 Agency Of Ind Science & Technol 電気的接続の形成方法とこれを用いて形成される集積回路

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2446088A1 (de) * 1974-09-26 1976-04-01 Siemens Ag Statisches speicherelement und verfahren zu seiner herstellung
US4053922A (en) * 1976-05-19 1977-10-11 General Electric Company Light triggered thyristor having controlled turn on delay
US4249196A (en) * 1978-08-21 1981-02-03 Burroughs Corporation Integrated circuit module with integral capacitor
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
US4722913A (en) * 1986-10-17 1988-02-02 Thomson Components-Mostek Corporation Doped semiconductor vias to contacts
US4766450A (en) * 1987-07-17 1988-08-23 Xerox Corporation Charging deposition control in electrographic thin film writting head
US4868537A (en) * 1987-09-10 1989-09-19 Siliconix Incorporated Doped SiO2 resistor and method of forming same
US4950620A (en) * 1988-09-30 1990-08-21 Dallas Semiconductor Corp. Process for making integrated circuit with doped silicon dioxide load elements
US6614088B1 (en) 2000-02-18 2003-09-02 James D. Beasom Breakdown improvement method and sturcture for lateral DMOS device
US12414312B2 (en) * 2021-12-20 2025-09-09 International Business Machines Corporation Back-end-of-line thin film resistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884580A (enExample) * 1972-02-12 1973-11-09

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390012A (en) * 1964-05-14 1968-06-25 Texas Instruments Inc Method of making dielectric bodies having conducting portions
US3682700A (en) * 1968-08-15 1972-08-08 Gale Ind Inc Method of imparting electrical conductivity to an amorphous substrate by ion implantation,and the product thereof
DE1812130C3 (de) * 1968-12-02 1975-01-16 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halbleiter- oder Dickfilmanordnung
US3614480A (en) * 1969-10-13 1971-10-19 Bell Telephone Labor Inc Temperature-stabilized electronic devices
US3620945A (en) * 1970-01-19 1971-11-16 Texas Instruments Inc Methods of making a composite dielectric body
US3693011A (en) * 1971-02-02 1972-09-19 Hughes Aircraft Co Ion implanted bolometer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4884580A (enExample) * 1972-02-12 1973-11-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121254A (en) * 1981-01-21 1982-07-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS57201050A (en) * 1981-06-05 1982-12-09 Seiko Epson Corp Multilayer wiring structure
JPH0430451A (ja) * 1990-05-25 1992-02-03 Agency Of Ind Science & Technol 電気的接続の形成方法とこれを用いて形成される集積回路

Also Published As

Publication number Publication date
GB1451296A (en) 1976-09-29
US3922708A (en) 1975-11-25
CA1023875A (en) 1978-01-03
IT1031241B (it) 1979-04-30
FR2263608A1 (enExample) 1975-10-03
FR2263608B1 (enExample) 1976-12-31
DE2458734A1 (de) 1975-09-11

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