CA1023059A - Method of doping a semiconductor body - Google Patents

Method of doping a semiconductor body

Info

Publication number
CA1023059A
CA1023059A CA215,539A CA215539A CA1023059A CA 1023059 A CA1023059 A CA 1023059A CA 215539 A CA215539 A CA 215539A CA 1023059 A CA1023059 A CA 1023059A
Authority
CA
Canada
Prior art keywords
doping
semiconductor body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA215,539A
Other languages
English (en)
French (fr)
Inventor
Kon H. Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1023059A publication Critical patent/CA1023059A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
CA215,539A 1974-05-03 1974-12-09 Method of doping a semiconductor body Expired CA1023059A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US466920A US3909304A (en) 1974-05-03 1974-05-03 Method of doping a semiconductor body

Publications (1)

Publication Number Publication Date
CA1023059A true CA1023059A (en) 1977-12-20

Family

ID=23853591

Family Applications (1)

Application Number Title Priority Date Filing Date
CA215,539A Expired CA1023059A (en) 1974-05-03 1974-12-09 Method of doping a semiconductor body

Country Status (6)

Country Link
US (1) US3909304A (en:Method)
JP (1) JPS5118473A (en:Method)
CA (1) CA1023059A (en:Method)
DE (1) DE2519432A1 (en:Method)
FR (1) FR2269790B1 (en:Method)
GB (1) GB1468131A (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179311A (en) * 1977-01-17 1979-12-18 Mostek Corporation Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides
US4584763A (en) * 1983-12-15 1986-04-29 International Business Machines Corporation One mask technique for substrate contacting in integrated circuits involving deep dielectric isolation
JPH0397224A (ja) * 1989-09-11 1991-04-23 Toshiba Corp 半導体装置の製造方法
US5358881A (en) * 1993-05-19 1994-10-25 Hewlett-Packard Company Silicon topography control method
US6780718B2 (en) * 1993-11-30 2004-08-24 Stmicroelectronics, Inc. Transistor structure and method for making same
US6171966B1 (en) * 1996-08-15 2001-01-09 Applied Materials, Inc. Delineation pattern for epitaxial depositions
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US8572800B2 (en) 2009-11-12 2013-11-05 Haan Corporation Base assembly for sweeper
CA2792551A1 (en) * 2011-01-17 2012-07-26 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide semiconductor device
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
WO2016081367A1 (en) 2014-11-18 2016-05-26 Sunedison Semiconductor Limited HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE COMPRISING A CHARGE TRAPPING LAYER FORMED BY He-N2 CO-IMPLANTATION
CN114496732B (zh) 2015-06-01 2023-03-03 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
WO2017087393A1 (en) 2015-11-20 2017-05-26 Sunedison Semiconductor Limited Manufacturing method of smoothing a semiconductor surface
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
EP3803961B1 (en) 2018-06-08 2023-03-22 GlobalWafers Co., Ltd. Method for transfer of a thin layer of silicon

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL135876C (en:Method) * 1963-06-11
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3764396A (en) * 1969-09-18 1973-10-09 Kogyo Gijutsuin Transistors and production thereof
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
US3796929A (en) * 1970-12-09 1974-03-12 Philips Nv Junction isolated integrated circuit resistor with crystal damage near isolation junction
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit

Also Published As

Publication number Publication date
FR2269790B1 (en:Method) 1978-06-30
US3909304A (en) 1975-09-30
JPS5118473A (en) 1976-02-14
JPS5325788B2 (en:Method) 1978-07-28
DE2519432A1 (de) 1975-11-13
GB1468131A (en) 1977-03-23
FR2269790A1 (en:Method) 1975-11-28

Similar Documents

Publication Publication Date Title
AU500045B2 (en) Method of etching a semiconductor device
AU505948B2 (en) Method of manufacturing a semiconductor device
CA1026012A (en) Method of making metal oxide semiconductor devices
CA1023059A (en) Method of doping a semiconductor body
CA1036050A (en) Method of producing a semiconductor device
AU7989375A (en) Method of manufacturing a contact body
CA1025560A (en) Semiconductor device
AU473946B2 (en) Method of manufacturing cushion materials
CA991319A (en) Method of manufacturing a device comprising a semiconductor body
CA1018641A (en) Method of manufacturing a gallium phosphide red-emitting device
CA1031376A (en) Method of preparing 1-methyl-3-phenyl-indane
CA1016664A (en) Semiconductor device
CA1032397A (en) Method of manufacturing a device
CA1029552A (en) Method of manufacturing a shoe
AU495758B2 (en) Method of manufacturing a contact body
AU441897B2 (en) Method of doping a semiconductor body
AU7989275A (en) Method of manufacturing a contact body
AU1821270A (en) Method of doping a semiconductor body
AU476325B2 (en) Method of making a semiconductor device
CA1014319A (en) Method of manufacturing cushion-filling material
AU489317B2 (en) Ethylhomologues of lasalocid a
CA1018439A (en) Method of manufacturing a monocrystalline substrate body
AU7460174A (en) Method of making a semiconductor device
AU7974275A (en) Ethylhomologues of lasalocid a
AU489818B2 (en) A method of preparing plaster