CA1019462A - Space charge limited transistor having recessed dielectric isolation - Google Patents

Space charge limited transistor having recessed dielectric isolation

Info

Publication number
CA1019462A
CA1019462A CA213,805A CA213805A CA1019462A CA 1019462 A CA1019462 A CA 1019462A CA 213805 A CA213805 A CA 213805A CA 1019462 A CA1019462 A CA 1019462A
Authority
CA
Canada
Prior art keywords
space charge
dielectric isolation
charge limited
recessed dielectric
limited transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA213,805A
Other languages
English (en)
Other versions
CA213805S (en
Inventor
Ingrid E. Magdo
Steven Magdo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1019462A publication Critical patent/CA1019462A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
CA213,805A 1973-12-26 1974-11-15 Space charge limited transistor having recessed dielectric isolation Expired CA1019462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00428165A US3855609A (en) 1973-12-26 1973-12-26 Space charge limited transistor having recessed dielectric isolation

Publications (1)

Publication Number Publication Date
CA1019462A true CA1019462A (en) 1977-10-18

Family

ID=23697809

Family Applications (1)

Application Number Title Priority Date Filing Date
CA213,805A Expired CA1019462A (en) 1973-12-26 1974-11-15 Space charge limited transistor having recessed dielectric isolation

Country Status (7)

Country Link
US (1) US3855609A (de)
JP (1) JPS5135834B2 (de)
CA (1) CA1019462A (de)
DE (1) DE2458735C2 (de)
FR (1) FR2256542B2 (de)
GB (1) GB1482163A (de)
IT (1) IT1051369B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
JPS5318383B2 (de) * 1974-10-07 1978-06-14
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492174A (en) * 1966-03-19 1970-01-27 Sony Corp Method of making a semiconductor device
BE758009A (fr) * 1969-10-27 1971-04-26 Western Electric Co Dispositif a impedance reglable pour circuit integre

Also Published As

Publication number Publication date
FR2256542A2 (de) 1975-07-25
DE2458735A1 (de) 1975-07-10
IT1051369B (it) 1981-04-21
US3855609A (en) 1974-12-17
DE2458735C2 (de) 1984-06-28
JPS5098287A (de) 1975-08-05
FR2256542B2 (de) 1979-01-05
JPS5135834B2 (de) 1976-10-05
GB1482163A (en) 1977-08-10

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