JPS5135834B2 - - Google Patents

Info

Publication number
JPS5135834B2
JPS5135834B2 JP49130532A JP13053274A JPS5135834B2 JP S5135834 B2 JPS5135834 B2 JP S5135834B2 JP 49130532 A JP49130532 A JP 49130532A JP 13053274 A JP13053274 A JP 13053274A JP S5135834 B2 JPS5135834 B2 JP S5135834B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49130532A
Other versions
JPS5098287A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5098287A publication Critical patent/JPS5098287A/ja
Publication of JPS5135834B2 publication Critical patent/JPS5135834B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
JP49130532A 1973-12-26 1974-11-14 Expired JPS5135834B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00428165A US3855609A (en) 1973-12-26 1973-12-26 Space charge limited transistor having recessed dielectric isolation

Publications (2)

Publication Number Publication Date
JPS5098287A JPS5098287A (ja) 1975-08-05
JPS5135834B2 true JPS5135834B2 (ja) 1976-10-05

Family

ID=23697809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49130532A Expired JPS5135834B2 (ja) 1973-12-26 1974-11-14

Country Status (7)

Country Link
US (1) US3855609A (ja)
JP (1) JPS5135834B2 (ja)
CA (1) CA1019462A (ja)
DE (1) DE2458735C2 (ja)
FR (1) FR2256542B2 (ja)
GB (1) GB1482163A (ja)
IT (1) IT1051369B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958264A (en) * 1974-06-24 1976-05-18 International Business Machines Corporation Space-charge-limited phototransistor
JPS5318383B2 (ja) * 1974-10-07 1978-06-14
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492174A (en) * 1966-03-19 1970-01-27 Sony Corp Method of making a semiconductor device
BE758009A (fr) * 1969-10-27 1971-04-26 Western Electric Co Dispositif a impedance reglable pour circuit integre

Also Published As

Publication number Publication date
FR2256542B2 (ja) 1979-01-05
DE2458735A1 (de) 1975-07-10
FR2256542A2 (ja) 1975-07-25
GB1482163A (en) 1977-08-10
DE2458735C2 (de) 1984-06-28
CA1019462A (en) 1977-10-18
IT1051369B (it) 1981-04-21
JPS5098287A (ja) 1975-08-05
US3855609A (en) 1974-12-17

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