CA1017462A - Reliable mosfet device and method for making same - Google Patents

Reliable mosfet device and method for making same

Info

Publication number
CA1017462A
CA1017462A CA198,773A CA198773A CA1017462A CA 1017462 A CA1017462 A CA 1017462A CA 198773 A CA198773 A CA 198773A CA 1017462 A CA1017462 A CA 1017462A
Authority
CA
Canada
Prior art keywords
making same
mosfet device
reliable mosfet
reliable
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA198,773A
Other languages
English (en)
Other versions
CA198773S (en
Inventor
William D. North
Gerald R. Parker
Gerald D. O'rourke
Robert H. Collins
Richard F. Levine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1017462A publication Critical patent/CA1017462A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CA198,773A 1973-05-03 1974-05-02 Reliable mosfet device and method for making same Expired CA1017462A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (1)

Publication Number Publication Date
CA1017462A true CA1017462A (en) 1977-09-13

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
CA198,773A Expired CA1017462A (en) 1973-05-03 1974-05-02 Reliable mosfet device and method for making same

Country Status (6)

Country Link
JP (1) JPS522272B2 (enrdf_load_stackoverflow)
CA (1) CA1017462A (enrdf_load_stackoverflow)
DE (1) DE2419704A1 (enrdf_load_stackoverflow)
FR (1) FR2228301B1 (enrdf_load_stackoverflow)
GB (1) GB1452805A (enrdf_load_stackoverflow)
IT (1) IT1006474B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (zh) 2004-05-21 2013-05-21 Takeda Pharmaceutical 環狀醯胺衍生物、以及其製品和用法
WO2013132953A1 (ja) * 2012-03-05 2013-09-12 株式会社村田製作所 接合方法、電子装置の製造方法、および電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (enrdf_load_stackoverflow) * 1963-06-28
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices

Also Published As

Publication number Publication date
GB1452805A (en) 1976-10-20
JPS522272B2 (enrdf_load_stackoverflow) 1977-01-20
FR2228301B1 (enrdf_load_stackoverflow) 1977-10-14
DE2419704A1 (de) 1974-11-21
FR2228301A1 (enrdf_load_stackoverflow) 1974-11-29
IT1006474B (it) 1976-09-30
JPS5011391A (enrdf_load_stackoverflow) 1975-02-05

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