CA1015051A - Double heterostructure laser - Google Patents

Double heterostructure laser

Info

Publication number
CA1015051A
CA1015051A CA193,328A CA193328A CA1015051A CA 1015051 A CA1015051 A CA 1015051A CA 193328 A CA193328 A CA 193328A CA 1015051 A CA1015051 A CA 1015051A
Authority
CA
Canada
Prior art keywords
double heterostructure
heterostructure laser
laser
double
heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA193,328A
Other languages
English (en)
Other versions
CA193328S (en
Inventor
Kunio Itoh
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2286873A external-priority patent/JPS544600B2/ja
Priority claimed from JP2286773A external-priority patent/JPS542829B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of CA1015051A publication Critical patent/CA1015051A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA193,328A 1973-02-26 1974-02-25 Double heterostructure laser Expired CA1015051A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2286873A JPS544600B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26
JP2286773A JPS542829B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26

Publications (1)

Publication Number Publication Date
CA1015051A true CA1015051A (en) 1977-08-02

Family

ID=26360154

Family Applications (1)

Application Number Title Priority Date Filing Date
CA193,328A Expired CA1015051A (en) 1973-02-26 1974-02-25 Double heterostructure laser

Country Status (4)

Country Link
CA (1) CA1015051A (enrdf_load_stackoverflow)
DE (1) DE2409016C3 (enrdf_load_stackoverflow)
FR (1) FR2219545B1 (enrdf_load_stackoverflow)
GB (1) GB1461632A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2556503C2 (de) * 1975-12-16 1984-12-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Niederschlagen einer Halbleiterschicht auf einem Substrat
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
FR2555811B1 (fr) * 1983-11-30 1986-09-05 Radiotechnique Compelec Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes

Also Published As

Publication number Publication date
GB1461632A (en) 1977-01-13
DE2409016C3 (de) 1981-12-03
DE2409016B2 (de) 1977-09-01
DE2409016A1 (de) 1974-09-05
FR2219545B1 (enrdf_load_stackoverflow) 1976-12-03
FR2219545A1 (enrdf_load_stackoverflow) 1974-09-20

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19940802