GB1461632A - Semi-conductor alser - Google Patents

Semi-conductor alser

Info

Publication number
GB1461632A
GB1461632A GB865174A GB865174A GB1461632A GB 1461632 A GB1461632 A GB 1461632A GB 865174 A GB865174 A GB 865174A GB 865174 A GB865174 A GB 865174A GB 1461632 A GB1461632 A GB 1461632A
Authority
GB
United Kingdom
Prior art keywords
region
substrate
regions
type
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB865174A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2286873A external-priority patent/JPS544600B2/ja
Priority claimed from JP2286773A external-priority patent/JPS542829B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1461632A publication Critical patent/GB1461632A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB865174A 1973-02-26 1974-02-26 Semi-conductor alser Expired GB1461632A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2286873A JPS544600B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26
JP2286773A JPS542829B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26

Publications (1)

Publication Number Publication Date
GB1461632A true GB1461632A (en) 1977-01-13

Family

ID=26360154

Family Applications (1)

Application Number Title Priority Date Filing Date
GB865174A Expired GB1461632A (en) 1973-02-26 1974-02-26 Semi-conductor alser

Country Status (4)

Country Link
CA (1) CA1015051A (enrdf_load_stackoverflow)
DE (1) DE2409016C3 (enrdf_load_stackoverflow)
FR (1) FR2219545B1 (enrdf_load_stackoverflow)
GB (1) GB1461632A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2150752A (en) * 1983-11-30 1985-07-03 Philips Nv Electroluminescent diode and method of manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2556503C2 (de) * 1975-12-16 1984-12-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Niederschlagen einer Halbleiterschicht auf einem Substrat

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2000373A (en) * 1977-06-27 1979-01-04 Thomson Csf Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2000373B (en) * 1977-06-27 1982-04-07 Thomson Csf A diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB2150752A (en) * 1983-11-30 1985-07-03 Philips Nv Electroluminescent diode and method of manufacturing same

Also Published As

Publication number Publication date
DE2409016C3 (de) 1981-12-03
DE2409016B2 (de) 1977-09-01
CA1015051A (en) 1977-08-02
DE2409016A1 (de) 1974-09-05
FR2219545B1 (enrdf_load_stackoverflow) 1976-12-03
FR2219545A1 (enrdf_load_stackoverflow) 1974-09-20

Similar Documents

Publication Publication Date Title
US4819036A (en) Semiconductor device
EP1513234A1 (en) Multibeam semiconductor laser, semiconductor light- emitting device and semiconductor device
US4987468A (en) Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US6605486B2 (en) Bipolar transistor, semiconductor light emitting device and semiconductor device
US4212020A (en) Solid state electro-optical devices on a semi-insulating substrate
US4805179A (en) Transverse junction stripe laser
GB1492808A (en) Stress reduction in multi-layer structures
GB1492807A (en) Reduction of dislocation in multilayer structures
GB1476118A (en) Semiconductor laser device and method of manufacture
EP0206787A2 (en) Heterojunction bipolar transistor and method of manufacturing same
JP3457468B2 (ja) 多層構造半導体装置
US5164797A (en) Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US4149175A (en) Solidstate light-emitting device
KR930007190B1 (ko) 화합물 반도체 장치
Su et al. Measurement of radiative and Auger recombination rates in p-type InGaAsP diode lasers
GB1461632A (en) Semi-conductor alser
EP0412582B1 (en) A semiconductor laser
US5371756A (en) Semiconductor blue-green laser diodes
JPH07202340A (ja) 可視光半導体レーザ
US4751707A (en) Laser diode array exhibiting transverse lasing
Miller et al. Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes
EP0188352B1 (en) A method for the production of semiconductor devices using liquid epitaxy
US4034311A (en) Semiconductor laser
Goodwin et al. Gain and loss processes in GaAlAs-GaAs heterostructure lasers
US5534717A (en) Epitaxial wafer for light-emitting diode

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19940225