FR2219545A1 - - Google Patents

Info

Publication number
FR2219545A1
FR2219545A1 FR7406343A FR7406343A FR2219545A1 FR 2219545 A1 FR2219545 A1 FR 2219545A1 FR 7406343 A FR7406343 A FR 7406343A FR 7406343 A FR7406343 A FR 7406343A FR 2219545 A1 FR2219545 A1 FR 2219545A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7406343A
Other languages
French (fr)
Other versions
FR2219545B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2286873A external-priority patent/JPS544600B2/ja
Priority claimed from JP2286773A external-priority patent/JPS542829B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2219545A1 publication Critical patent/FR2219545A1/fr
Application granted granted Critical
Publication of FR2219545B1 publication Critical patent/FR2219545B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7406343A 1973-02-26 1974-02-25 Expired FR2219545B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2286873A JPS544600B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26
JP2286773A JPS542829B2 (enrdf_load_stackoverflow) 1973-02-26 1973-02-26

Publications (2)

Publication Number Publication Date
FR2219545A1 true FR2219545A1 (enrdf_load_stackoverflow) 1974-09-20
FR2219545B1 FR2219545B1 (enrdf_load_stackoverflow) 1976-12-03

Family

ID=26360154

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7406343A Expired FR2219545B1 (enrdf_load_stackoverflow) 1973-02-26 1974-02-25

Country Status (4)

Country Link
CA (1) CA1015051A (enrdf_load_stackoverflow)
DE (1) DE2409016C3 (enrdf_load_stackoverflow)
FR (1) FR2219545B1 (enrdf_load_stackoverflow)
GB (1) GB1461632A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2556503C2 (de) * 1975-12-16 1984-12-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum epitaktischen Niederschlagen einer Halbleiterschicht auf einem Substrat
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
FR2555811B1 (fr) * 1983-11-30 1986-09-05 Radiotechnique Compelec Procede de realisation de diodes electroluminescentes a faible largeur spectrale, et diodes obtenues par ce procede

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691476A (en) * 1970-12-31 1972-09-12 Bell Telephone Labor Inc Double heterostructure laser diodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
GB1461632A (en) 1977-01-13
DE2409016C3 (de) 1981-12-03
DE2409016B2 (de) 1977-09-01
CA1015051A (en) 1977-08-02
DE2409016A1 (de) 1974-09-05
FR2219545B1 (enrdf_load_stackoverflow) 1976-12-03

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