CA1012447A - Apparatus for deposition of semiconductor thin layers - Google Patents
Apparatus for deposition of semiconductor thin layersInfo
- Publication number
- CA1012447A CA1012447A CA183,673A CA183673A CA1012447A CA 1012447 A CA1012447 A CA 1012447A CA 183673 A CA183673 A CA 183673A CA 1012447 A CA1012447 A CA 1012447A
- Authority
- CA
- Canada
- Prior art keywords
- deposition
- semiconductor thin
- thin layers
- layers
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/065—Multiple stacked slider system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/064—Rotating sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10511472A JPS5342230B2 (ru) | 1972-10-19 | 1972-10-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1012447A true CA1012447A (en) | 1977-06-21 |
Family
ID=14398792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA183,673A Expired CA1012447A (en) | 1972-10-19 | 1973-10-18 | Apparatus for deposition of semiconductor thin layers |
Country Status (4)
Country | Link |
---|---|
US (1) | US3854447A (ru) |
JP (1) | JPS5342230B2 (ru) |
CA (1) | CA1012447A (ru) |
GB (1) | GB1451803A (ru) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1019827A (en) * | 1973-10-26 | 1977-10-25 | Tatsuro Beppu | Method of manufacturing a gallium phosphide light-emitting device |
FR2251369B1 (ru) * | 1973-11-15 | 1978-02-10 | Radiotechnique Compelec | |
JPS50110570A (ru) * | 1974-02-07 | 1975-08-30 | ||
JPS50119566A (ru) * | 1974-03-01 | 1975-09-19 | ||
JPS5129384A (ja) * | 1974-09-06 | 1976-03-12 | Oki Electric Ind Co Ltd | Ekisoepitakisharuseichoho |
FR2296264A1 (fr) * | 1974-12-24 | 1976-07-23 | Radiotechnique Compelec | Procede de realisation de dispositif semi-conducteur a heterojonction |
US4088514A (en) * | 1975-04-17 | 1978-05-09 | Matsushita Electric Industrial Co., Ltd. | Method for epitaxial growth of thin semiconductor layer from solution |
JPS51131270A (en) * | 1975-05-09 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Semi-conductor manufacturing unit |
US4026240A (en) * | 1975-11-17 | 1977-05-31 | Hewlett-Packard Company | Liquid phase epitaxial reactor apparatus |
JPS5384459A (en) * | 1976-12-29 | 1978-07-25 | Fujitsu Ltd | Liquid-phase epitaxial growth device |
DE2730358C3 (de) * | 1977-07-05 | 1982-03-18 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie |
US4160682A (en) * | 1978-03-30 | 1979-07-10 | Western Electric Co., Inc. | Depositing materials on stacked semiconductor wafers |
US4235191A (en) * | 1979-03-02 | 1980-11-25 | Western Electric Company, Inc. | Apparatus for depositing materials on stacked semiconductor wafers |
JPS55137381U (ru) * | 1979-03-22 | 1980-09-30 | ||
US4412502A (en) * | 1981-06-25 | 1983-11-01 | Western Electric Co., Inc. | Apparatus for the elimination of edge growth in liquid phase epitaxy |
US4390379A (en) * | 1981-06-25 | 1983-06-28 | Western Electric Company, Inc. | Elimination of edge growth in liquid phase epitaxy |
US4384398A (en) * | 1981-10-26 | 1983-05-24 | Bell Telephone Laboratories, Incorporated | Elimination of silicon pyramids from epitaxial crystals of GaAs and GaAlAs |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1600341A (ru) * | 1968-12-31 | 1970-07-20 | ||
US3759759A (en) * | 1970-01-29 | 1973-09-18 | Fairchild Camera Instr Co | Push pull method for solution epitaxial growth of iii v compounds |
US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
US3765959A (en) * | 1971-07-30 | 1973-10-16 | Tokyo Shibaura Electric Co | Method for the liquid phase epitaxial growth of semiconductor crystals |
BE791927A (fr) * | 1971-11-29 | 1973-03-16 | Western Electric Co | Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs |
-
1972
- 1972-10-19 JP JP10511472A patent/JPS5342230B2/ja not_active Expired
-
1973
- 1973-10-18 CA CA183,673A patent/CA1012447A/en not_active Expired
- 1973-10-18 US US00407605A patent/US3854447A/en not_active Expired - Lifetime
- 1973-10-19 GB GB4876873A patent/GB1451803A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2352605A1 (de) | 1974-05-09 |
JPS4963381A (ru) | 1974-06-19 |
GB1451803A (en) | 1976-10-06 |
US3854447A (en) | 1974-12-17 |
DE2352605B2 (de) | 1976-09-09 |
JPS5342230B2 (ru) | 1978-11-09 |
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