BRPI1013231A2 - componente amplificador com um elemento de compensação - Google Patents

componente amplificador com um elemento de compensação

Info

Publication number
BRPI1013231A2
BRPI1013231A2 BRPI1013231A BRPI1013231A BRPI1013231A2 BR PI1013231 A2 BRPI1013231 A2 BR PI1013231A2 BR PI1013231 A BRPI1013231 A BR PI1013231A BR PI1013231 A BRPI1013231 A BR PI1013231A BR PI1013231 A2 BRPI1013231 A2 BR PI1013231A2
Authority
BR
Brazil
Prior art keywords
compensation element
amplifier component
amplifier
component
compensation
Prior art date
Application number
BRPI1013231A
Other languages
English (en)
Inventor
Bernhard Kaehs
Original Assignee
Rohde & Schwarz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohde & Schwarz filed Critical Rohde & Schwarz
Publication of BRPI1013231A2 publication Critical patent/BRPI1013231A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
BRPI1013231A 2009-12-28 2010-11-30 componente amplificador com um elemento de compensação BRPI1013231A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060669 2009-12-28
DE102010009984A DE102010009984A1 (de) 2009-12-28 2010-03-03 Verstärkerbaustein mit einem Kompensationselement
PCT/EP2010/007261 WO2011079899A1 (de) 2009-12-28 2010-11-30 Verstärkerbaustein mit einem kompensationselement

Publications (1)

Publication Number Publication Date
BRPI1013231A2 true BRPI1013231A2 (pt) 2016-04-05

Family

ID=43733312

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI1013231A BRPI1013231A2 (pt) 2009-12-28 2010-11-30 componente amplificador com um elemento de compensação

Country Status (7)

Country Link
US (1) US8766714B2 (pt)
EP (1) EP2520019B1 (pt)
CN (1) CN102349233B (pt)
BR (1) BRPI1013231A2 (pt)
DE (1) DE102010009984A1 (pt)
ES (1) ES2492501T3 (pt)
WO (1) WO2011079899A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013226989A1 (de) * 2013-12-20 2015-07-09 Rohde & Schwarz Gmbh & Co. Kg Halbleiter-Bauteil mit Chip für den Hochfrequenzbereich
US9576915B2 (en) * 2014-12-24 2017-02-21 Nxp B.V. IC-package interconnect for millimeter wave systems
US10608588B2 (en) * 2017-12-26 2020-03-31 Nxp Usa, Inc. Amplifiers and related integrated circuits

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3713006A (en) * 1971-02-08 1973-01-23 Trw Inc Hybrid transistor
US4107728A (en) 1977-01-07 1978-08-15 Varian Associates, Inc. Package for push-pull semiconductor devices
US4456888A (en) * 1981-03-26 1984-06-26 Raytheon Company Radio frequency network having plural electrically interconnected field effect transistor cells
US4647867A (en) * 1985-12-16 1987-03-03 Gte Laboratories Incorporated High-frequency, high-gain, push-pull amplifier circuit
US5066925A (en) * 1990-12-10 1991-11-19 Westinghouse Electric Corp. Multi push-pull MMIC power amplifier
US5623231A (en) * 1994-09-26 1997-04-22 Endgate Corporation Push-pull power amplifier
US6177834B1 (en) 1998-12-02 2001-01-23 Ericsson, Inc. Output matched LDMOS power transistor device
US6462620B1 (en) * 2000-09-12 2002-10-08 Silicon Laboratories, Inc. RF power amplifier circuitry and method for amplifying signals
US6549071B1 (en) * 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
JP2005503679A (ja) * 2000-10-10 2005-02-03 カリフォルニア・インスティテュート・オブ・テクノロジー 分布型環状電力増幅器の構造
JP2003174335A (ja) * 2001-12-05 2003-06-20 Mitsubishi Electric Corp 増幅器
US7119613B2 (en) * 2002-01-24 2006-10-10 Koninklijke Philips Electronics N.V. RF amplifier
JP2004228989A (ja) 2003-01-23 2004-08-12 Renesas Technology Corp 半導体装置
CN101176205A (zh) * 2005-03-18 2008-05-07 Nxp股份有限公司 用于射频晶体管输出匹配的方法和系统
EP1908167B1 (en) 2005-07-05 2009-09-09 Freescale Semiconductor, Inc. Compensation for parasitic coupling between rf or microwave transistors in the same package

Also Published As

Publication number Publication date
EP2520019A1 (de) 2012-11-07
CN102349233B (zh) 2014-11-26
DE102010009984A1 (de) 2011-06-30
US20120299656A1 (en) 2012-11-29
WO2011079899A1 (de) 2011-07-07
CN102349233A (zh) 2012-02-08
EP2520019B1 (de) 2014-08-06
US8766714B2 (en) 2014-07-01
ES2492501T3 (es) 2014-09-09

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B11D Dismissal acc. art. 38, par 2 of ipl - failure to pay fee after grant in time