BRPI1006124A2 - sensor de radiação eletromagnética e método de fabricação - Google Patents
sensor de radiação eletromagnética e método de fabricaçãoInfo
- Publication number
- BRPI1006124A2 BRPI1006124A2 BRPI1006124A BRPI1006124A BRPI1006124A2 BR PI1006124 A2 BRPI1006124 A2 BR PI1006124A2 BR PI1006124 A BRPI1006124 A BR PI1006124A BR PI1006124 A BRPI1006124 A BR PI1006124A BR PI1006124 A2 BRPI1006124 A2 BR PI1006124A2
- Authority
- BR
- Brazil
- Prior art keywords
- manufacturing
- electromagnetic radiation
- radiation sensor
- sensor
- electromagnetic
- Prior art date
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/349,860 | 2009-01-07 | ||
| US12/349,860 US7842533B2 (en) | 2009-01-07 | 2009-01-07 | Electromagnetic radiation sensor and method of manufacture |
| PCT/US2010/020237 WO2010080815A1 (en) | 2009-01-07 | 2010-01-06 | Electromagnetic radiation sensor and method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BRPI1006124A2 true BRPI1006124A2 (pt) | 2016-06-28 |
| BRPI1006124B1 BRPI1006124B1 (pt) | 2020-03-10 |
Family
ID=42045395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI1006124-0A BRPI1006124B1 (pt) | 2009-01-07 | 2010-01-06 | Método para formar um bolômetro de semicondutor e bolômetro de semicondutor de óxido metálico complementar |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7842533B2 (pt) |
| EP (1) | EP2386116B1 (pt) |
| JP (1) | JP2012514753A (pt) |
| KR (1) | KR101698218B1 (pt) |
| CN (1) | CN102326255B (pt) |
| BR (1) | BRPI1006124B1 (pt) |
| CA (1) | CA2748969C (pt) |
| MX (1) | MX2011007280A (pt) |
| WO (1) | WO2010080815A1 (pt) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101922119B1 (ko) * | 2011-12-22 | 2019-02-14 | 삼성전자주식회사 | 적외선 검출기 및 이를 사용하는 적외선 검출 방법 |
| US8900906B2 (en) | 2012-03-08 | 2014-12-02 | Robert Bosch Gmbh | Atomic layer deposition strengthening members and method of manufacture |
| US9698281B2 (en) * | 2012-08-22 | 2017-07-04 | Robert Bosch Gmbh | CMOS bolometer |
| US9368658B2 (en) | 2012-08-31 | 2016-06-14 | Robert Bosch Gmbh | Serpentine IR sensor |
| US8993966B2 (en) * | 2012-09-26 | 2015-03-31 | Honeywell International Inc. | Flame sensor integrity monitoring |
| US9093594B2 (en) | 2012-10-17 | 2015-07-28 | Robert Bosch Gmbh | Multi-stack film bolometer |
| KR101902920B1 (ko) * | 2012-12-11 | 2018-10-01 | 삼성전자주식회사 | 광대역 표면 플라즈몬 공진기를 포함하는 적외선 검출기 |
| US9257587B2 (en) * | 2012-12-21 | 2016-02-09 | Robert Bosch Gmbh | Suspension and absorber structure for bolometer |
| US9199838B2 (en) | 2013-10-25 | 2015-12-01 | Robert Bosch Gmbh | Thermally shorted bolometer |
| US9919921B2 (en) | 2014-01-24 | 2018-03-20 | The Regents Of The University Of Colorado, A Body Corporate | Methods of preparing nanodevices |
| CN208012765U (zh) * | 2014-07-03 | 2018-10-26 | 菲力尔系统公司 | 红外成像装置、红外摄相机、微测辐射热计和焦平面阵列 |
| DE102014213369B4 (de) * | 2014-07-09 | 2018-11-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Strahlungsdetektor und verfahren zur herstellung eines strahlungsdetektors und array von solchen strahlungsdetektoren |
| EP3204742A4 (en) | 2014-10-10 | 2018-05-30 | Robert Bosch GmbH | Method to modulate the sensitivity of a bolometer via negative interference |
| FR3046879B1 (fr) * | 2016-01-20 | 2022-07-15 | Ulis | Procede de fabrication d'un detecteur de rayonnement electromagnetique a micro-encapsulation |
| US10171919B2 (en) * | 2016-05-16 | 2019-01-01 | The Regents Of The University Of Colorado, A Body Corporate | Thermal and thermoacoustic nanodevices and methods of making and using same |
| FR3066044B1 (fr) | 2017-05-02 | 2020-02-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Detecteur de rayonnement electromagnetique, encapsule par report de couche mince. |
| CN108458789A (zh) * | 2018-04-20 | 2018-08-28 | 国家纳米科学中心 | 一种基于硫化钽薄膜的测辐射热计及其制备方法和用途 |
| CN113677965A (zh) * | 2019-03-11 | 2021-11-19 | 菲力尔商业系统公司 | 微测热辐射计系统和方法 |
| KR102369495B1 (ko) * | 2020-07-29 | 2022-03-04 | 주식회사 보다 | 볼로미터 장치 및 이의 제조방법 |
| KR102284749B1 (ko) * | 2020-07-29 | 2021-08-02 | 주식회사 보다 | 볼로미터 장치 및 이의 제조방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5021663B1 (en) | 1988-08-12 | 1997-07-01 | Texas Instruments Inc | Infrared detector |
| US5286976A (en) | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
| US5260225A (en) | 1991-12-20 | 1993-11-09 | Honeywell Inc. | Integrated infrared sensitive bolometers |
| US5512748A (en) * | 1994-07-26 | 1996-04-30 | Texas Instruments Incorporated | Thermal imaging system with a monolithic focal plane array and method |
| US6515285B1 (en) | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
| US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| US6144285A (en) * | 1999-09-13 | 2000-11-07 | Honeywell International Inc. | Thermal sensor and method of making same |
| US6690014B1 (en) * | 2000-04-25 | 2004-02-10 | Raytheon Company | Microbolometer and method for forming |
| JP2001356057A (ja) * | 2000-06-13 | 2001-12-26 | Denso Corp | 赤外線イメージセンサ及びその製造方法 |
| JP3409848B2 (ja) * | 2000-08-29 | 2003-05-26 | 日本電気株式会社 | 熱型赤外線検出器 |
| US6621083B2 (en) * | 2000-12-29 | 2003-09-16 | Honeywell International Inc. | High-absorption wide-band pixel for bolometer arrays |
| US6777681B1 (en) | 2001-04-25 | 2004-08-17 | Raytheon Company | Infrared detector with amorphous silicon detector elements, and a method of making it |
| FR2844635B1 (fr) | 2002-09-16 | 2005-08-19 | Commissariat Energie Atomique | Dispositif detecteur de rayonnement electromagnetique avec boitier integre comportant deux detecteurs superposes |
| FR2862160B1 (fr) | 2003-11-10 | 2006-05-12 | Ulis | Dispositif de detection de rayonnements infrarouges a detecteurs bolometriques |
| US7491938B2 (en) | 2004-03-23 | 2009-02-17 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-spectral uncooled microbolometer detectors |
| US20050275750A1 (en) | 2004-06-09 | 2005-12-15 | Salman Akram | Wafer-level packaged microelectronic imagers and processes for wafer-level packaging |
| FR2875336B1 (fr) | 2004-09-16 | 2006-11-17 | Ulis Soc Par Actions Simplifie | Dispositif de detection de rayonnements infrarouges a detecteurs bolometriques |
| US7459686B2 (en) | 2006-01-26 | 2008-12-02 | L-3 Communications Corporation | Systems and methods for integrating focal plane arrays |
| US7655909B2 (en) * | 2006-01-26 | 2010-02-02 | L-3 Communications Corporation | Infrared detector elements and methods of forming same |
| KR100685748B1 (ko) * | 2006-02-09 | 2007-02-22 | 삼성전자주식회사 | 박막 형성 방법 및 이를 이용한 게이트 구조물의 제조 방법 |
| US7711239B2 (en) * | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
| US20080185522A1 (en) | 2007-02-06 | 2008-08-07 | Shih-Chia Chang | Infrared sensors and methods for manufacturing the infrared sensors |
-
2009
- 2009-01-07 US US12/349,860 patent/US7842533B2/en active Active
-
2010
- 2010-01-06 MX MX2011007280A patent/MX2011007280A/es active IP Right Grant
- 2010-01-06 JP JP2011545406A patent/JP2012514753A/ja active Pending
- 2010-01-06 EP EP10701168.6A patent/EP2386116B1/en active Active
- 2010-01-06 CA CA2748969A patent/CA2748969C/en active Active
- 2010-01-06 WO PCT/US2010/020237 patent/WO2010080815A1/en active Application Filing
- 2010-01-06 CN CN201080008386.0A patent/CN102326255B/zh active Active
- 2010-01-06 KR KR1020117018333A patent/KR101698218B1/ko active IP Right Grant
- 2010-01-06 BR BRPI1006124-0A patent/BRPI1006124B1/pt active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| US20100171190A1 (en) | 2010-07-08 |
| KR101698218B1 (ko) | 2017-01-19 |
| MX2011007280A (es) | 2011-09-01 |
| BRPI1006124B1 (pt) | 2020-03-10 |
| US7842533B2 (en) | 2010-11-30 |
| CA2748969A1 (en) | 2010-07-15 |
| JP2012514753A (ja) | 2012-06-28 |
| EP2386116B1 (en) | 2017-08-30 |
| WO2010080815A1 (en) | 2010-07-15 |
| CA2748969C (en) | 2018-04-03 |
| CN102326255B (zh) | 2015-11-25 |
| KR20110107366A (ko) | 2011-09-30 |
| EP2386116A1 (en) | 2011-11-16 |
| CN102326255A (zh) | 2012-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 10/03/2020, OBSERVADAS AS CONDICOES LEGAIS. |