BRPI0518436A2 - circuito de comutaÇço para a obtenÇço de uma faixa dinÂmica duplicada - Google Patents

circuito de comutaÇço para a obtenÇço de uma faixa dinÂmica duplicada

Info

Publication number
BRPI0518436A2
BRPI0518436A2 BRPI0518436-3A BRPI0518436A BRPI0518436A2 BR PI0518436 A2 BRPI0518436 A2 BR PI0518436A2 BR PI0518436 A BRPI0518436 A BR PI0518436A BR PI0518436 A2 BRPI0518436 A2 BR PI0518436A2
Authority
BR
Brazil
Prior art keywords
switching circuit
obtaining
dynamic range
duplicated
transistor
Prior art date
Application number
BRPI0518436-3A
Other languages
English (en)
Inventor
Claret Jorge Vicente Blasco
Jose Luis Camps Soriano
Jose Luis Gonzalez Moreno
Navarro Francisco Jose Andres
Original Assignee
Diseno Sistemas Silicio Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Diseno Sistemas Silicio Sa filed Critical Diseno Sistemas Silicio Sa
Publication of BRPI0518436A2 publication Critical patent/BRPI0518436A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)
  • Networks Using Active Elements (AREA)
  • Dc-Dc Converters (AREA)

Abstract

CIRCUITO DE COMUTAÇçO PARA A OBTENÇçO DE UMA FAIXA DINÂMICA DUPLICADA. A invenção refere-se a um circuito de comutação que é usado para a obtenção de uma faixa dinâmica duplicada. De acordo com a invenção, utilizando-se um transistor, a invenção pode ser usada para comutar sinais com um nível de pico igual à tensão de alimentação, sendo o referido nível entre picos duas vezes aquele da alimentação. A invenção é caracterizada pelo fato de que um transistor (17) é conectado à fonte de sinal (10) e uma carga (19) por meio de uma série de capacitores (11, 18), resistores (15, 16) e um indutor (12) que formam o circuito da invenção. A invenção também é caracterizada pelo fato de que duas tensões complementares de controle (13 e 14) são aplicadas a fim de controlarem os estados de corte e condução do circuito de comutação.
BRPI0518436-3A 2004-11-16 2005-10-26 circuito de comutaÇço para a obtenÇço de uma faixa dinÂmica duplicada BRPI0518436A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ES200402748A ES2263357B1 (es) 2004-11-16 2004-11-16 Circuito conmutador para la obtencion de un rango dinamico duplicado.
PCT/ES2005/000575 WO2006053916A2 (es) 2004-11-16 2005-10-26 Circuito conmutador para la obtención de un rango dinámico duplicado

Publications (1)

Publication Number Publication Date
BRPI0518436A2 true BRPI0518436A2 (pt) 2008-11-18

Family

ID=36407502

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0518436-3A BRPI0518436A2 (pt) 2004-11-16 2005-10-26 circuito de comutaÇço para a obtenÇço de uma faixa dinÂmica duplicada

Country Status (13)

Country Link
US (1) US7619461B2 (pt)
EP (1) EP1826903B1 (pt)
JP (1) JP4859841B2 (pt)
KR (1) KR101172043B1 (pt)
CN (1) CN101300738B (pt)
AU (1) AU2005305821A1 (pt)
BR (1) BRPI0518436A2 (pt)
CA (1) CA2588265A1 (pt)
EA (1) EA010175B1 (pt)
ES (1) ES2263357B1 (pt)
IL (1) IL183219A (pt)
TW (1) TWI369074B (pt)
WO (1) WO2006053916A2 (pt)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5151145B2 (ja) * 2006-12-26 2013-02-27 ソニー株式会社 スイッチ回路、可変コンデンサ回路およびそのｉｃ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU438109A1 (ru) * 1973-04-24 1974-07-30 Ордена Ленина Институт Проблем Управления Ключ
JPS57173228A (en) * 1981-04-20 1982-10-25 Hitachi Ltd Mos-fet switch
JPH0773202B2 (ja) * 1989-12-28 1995-08-02 三菱電機株式会社 半導体集積回路
JP3165751B2 (ja) * 1992-10-30 2001-05-14 株式会社東芝 半導体集積回路装置
JPH0832431A (ja) * 1994-07-11 1996-02-02 Shimada Phys & Chem Ind Co Ltd 信号切換器
JP3288209B2 (ja) * 1994-12-16 2002-06-04 松下電器産業株式会社 半導体集積回路
DE19747801A1 (de) * 1997-10-30 1999-05-06 Thomson Brandt Gmbh Schaltnetzteil
CN2377552Y (zh) * 1998-11-11 2000-05-10 四川大学电子技术公司 宽范围大功率开关稳压电源
US6861828B2 (en) * 2000-02-08 2005-03-01 The Furukawa Electric Co., Ltd. Apparatus and circuit for power supply, and apparatus for controlling large current load
JP3736356B2 (ja) * 2001-02-01 2006-01-18 日本電気株式会社 高周波スイッチ回路
JP3616343B2 (ja) 2001-03-27 2005-02-02 松下電器産業株式会社 高周波スイッチ回路およびそれを用いた通信端末装置
GB0130754D0 (en) * 2001-12-21 2002-02-06 Lucas Industries Ltd Switch control circuit
ES2206053A1 (es) 2002-10-24 2004-05-01 Diseño De Sistemas En Silicio, S.A. Combinador de potencia.
JP2006332416A (ja) * 2005-05-27 2006-12-07 Nec Electronics Corp 半導体装置

Also Published As

Publication number Publication date
EA200701089A1 (ru) 2007-12-28
EP1826903A2 (en) 2007-08-29
KR20070100713A (ko) 2007-10-11
AU2005305821A1 (en) 2006-05-26
US20090002047A1 (en) 2009-01-01
WO2006053916A2 (es) 2006-05-26
TWI369074B (en) 2012-07-21
JP4859841B2 (ja) 2012-01-25
CN101300738B (zh) 2011-05-04
US7619461B2 (en) 2009-11-17
EA010175B1 (ru) 2008-06-30
EP1826903B1 (en) 2012-12-05
TW200638677A (en) 2006-11-01
ES2263357A1 (es) 2006-12-01
KR101172043B1 (ko) 2012-08-08
ES2263357B1 (es) 2007-11-16
IL183219A (en) 2013-11-28
CA2588265A1 (en) 2006-05-26
CN101300738A (zh) 2008-11-05
IL183219A0 (en) 2007-10-31
WO2006053916A3 (es) 2008-06-12
EP1826903A4 (en) 2011-05-04
JP2008521307A (ja) 2008-06-19

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 5A E 6A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2160 DE 29/05/2012.