BR9305036A - Sulfonamidas N,N-dissubstituidas, mistura sensivel á radiaçáo e material de registro - Google Patents

Sulfonamidas N,N-dissubstituidas, mistura sensivel á radiaçáo e material de registro

Info

Publication number
BR9305036A
BR9305036A BR9305036A BR9305036A BR9305036A BR 9305036 A BR9305036 A BR 9305036A BR 9305036 A BR9305036 A BR 9305036A BR 9305036 A BR9305036 A BR 9305036A BR 9305036 A BR9305036 A BR 9305036A
Authority
BR
Brazil
Prior art keywords
sulphonamides
disubstituted
recording material
radiation sensitive
sensitive mixture
Prior art date
Application number
BR9305036A
Other languages
English (en)
Inventor
Mathias Eichhorn
Gerhard Buhr
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Publication of BR9305036A publication Critical patent/BR9305036A/pt

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/50—Compounds containing any of the groups, X being a hetero atom, Y being any atom
    • C07C311/52—Y being a hetero atom
    • C07C311/53—X and Y not being nitrogen atoms, e.g. N-sulfonylcarbamic acid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
BR9305036A 1992-12-14 1993-12-13 Sulfonamidas N,N-dissubstituidas, mistura sensivel á radiaçáo e material de registro BR9305036A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4242051A DE4242051A1 (de) 1992-12-14 1992-12-14 N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch

Publications (1)

Publication Number Publication Date
BR9305036A true BR9305036A (pt) 1994-06-21

Family

ID=6475162

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9305036A BR9305036A (pt) 1992-12-14 1993-12-13 Sulfonamidas N,N-dissubstituidas, mistura sensivel á radiaçáo e material de registro

Country Status (6)

Country Link
US (1) US5612169A (pt)
EP (1) EP0602376B1 (pt)
JP (1) JPH06263716A (pt)
KR (1) KR100311848B1 (pt)
BR (1) BR9305036A (pt)
DE (2) DE4242051A1 (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69706773T2 (de) * 1996-06-20 2002-07-04 Fuji Photo Film Co., Ltd. Positiv arbeitende, bilderzeugende Zusammensetzung
TWI269940B (en) * 1999-10-29 2007-01-01 Shinetsu Chemical Co Resist composition
JP4029288B2 (ja) 2003-05-21 2008-01-09 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4081677B2 (ja) 2003-05-21 2008-04-30 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4009852B2 (ja) 2003-05-21 2007-11-21 信越化学工業株式会社 塩基性化合物、レジスト材料及びパターン形成方法
TWI296629B (en) * 2003-06-12 2008-05-11 Shinetsu Chemical Co Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process
JP4355917B2 (ja) 2003-10-29 2009-11-04 信越化学工業株式会社 含窒素有機化合物、レジスト材料及びパターン形成方法
US7276324B2 (en) 2003-11-14 2007-10-02 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing organic compound, resist composition and patterning process
US7297318B2 (en) 2005-11-17 2007-11-20 J.M. Huber Corporation Method of removing heavy metals from silicate sources during silicate manufacturing
JP4784760B2 (ja) 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3933894A (en) * 1966-05-03 1976-01-20 Monsanto Company N-arylsulfonyl carbamates
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US3971650A (en) * 1973-06-29 1976-07-27 Chevron Research Company Herbicidal N1 -methoxycarbonyl-N1 -alkyl-3,5-dinitro-N4 -N4 -dialkylsulfanilamide
JPS5343371B2 (pt) * 1973-12-11 1978-11-18
JPS5115321A (ja) * 1974-07-30 1976-02-06 Kokusai Denshin Denwa Co Ltd Sosasochi
CH621416A5 (pt) * 1975-03-27 1981-01-30 Hoechst Ag
JPS5270020A (en) * 1975-12-10 1977-06-10 Hokko Chem Ind Co Ltd Fungicidal composition for agriculture and gardening use
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
JPS5461148A (en) * 1977-10-20 1979-05-17 Nippon Soda Co Ltd Sulfamoylphenylcarbonates and miticide containing the same
IT1109386B (it) * 1977-11-08 1985-12-16 Nippon Soda Co Composizione acaricida
DE2829512A1 (de) * 1978-07-05 1980-01-17 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
US4304834A (en) * 1979-12-26 1981-12-08 Polaroid Corporation Novel xanthene compounds and photographic products and processes employing the same
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS59204165A (ja) * 1983-04-28 1984-11-19 Sumitomo Chem Co Ltd Ｎ−フェニルカ−バメ−ト系化合物、その製造法およびそれを有効成分とする農園芸用殺菌剤
US4602263A (en) * 1984-09-04 1986-07-22 Polaroid Corporation Thermal imaging method
DE3750275T3 (de) * 1986-06-13 1998-10-01 Microsi Inc Lackzusammensetzung und -anwendung.
EP0366590B2 (en) * 1988-10-28 2001-03-21 International Business Machines Corporation Highly sensitive positive photoresist compositions
EP0394191B1 (de) * 1989-04-14 1994-02-02 Ciba-Geigy Ag Sulfenylierte Carbaminsäureester
EP0421388A3 (en) * 1989-10-03 1991-12-18 Mitsubishi Petrochemical Co., Ltd. Positive-acting photoresist composition
DE4112966A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4242050A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung

Also Published As

Publication number Publication date
KR940014322A (ko) 1994-07-18
EP0602376B1 (de) 1997-04-23
DE4242051A1 (de) 1994-06-16
JPH06263716A (ja) 1994-09-20
DE59306262D1 (de) 1997-05-28
KR100311848B1 (ko) 2002-08-27
US5612169A (en) 1997-03-18
EP0602376A1 (de) 1994-06-22

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Legal Events

Date Code Title Description
EE Request for examination
FB36 Technical and formal requirements: requirement - article 36 of industrial property law
FA8 Dismissal: dismissal - article 36, par. 1 of industrial property law