BR8701132A - Processo de formacao de material composto e material composto - Google Patents
Processo de formacao de material composto e material compostoInfo
- Publication number
- BR8701132A BR8701132A BR8701132A BR8701132A BR8701132A BR 8701132 A BR8701132 A BR 8701132A BR 8701132 A BR8701132 A BR 8701132A BR 8701132 A BR8701132 A BR 8701132A BR 8701132 A BR8701132 A BR 8701132A
- Authority
- BR
- Brazil
- Prior art keywords
- compound material
- formation
- compound
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title 2
- 230000015572 biosynthetic process Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0089—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with other, not previously mentioned inorganic compounds as the main non-metallic constituent, e.g. sulfides, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12049—Nonmetal component
- Y10T428/12056—Entirely inorganic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12097—Nonparticulate component encloses particles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
- Y10T428/12139—Nonmetal particles in particulate component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12181—Composite powder [e.g., coated, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
- Powder Metallurgy (AREA)
- Laminated Bodies (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83886686A | 1986-03-12 | 1986-03-12 | |
US06/922,271 US4715892A (en) | 1986-03-12 | 1986-10-30 | Cermet substrate with glass adhesion component |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8701132A true BR8701132A (pt) | 1988-01-05 |
Family
ID=27126067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8701132A BR8701132A (pt) | 1986-03-12 | 1987-03-12 | Processo de formacao de material composto e material composto |
Country Status (5)
Country | Link |
---|---|
US (1) | US4715892A (pt) |
EP (1) | EP0237047A3 (pt) |
KR (1) | KR870009046A (pt) |
CN (1) | CN1013882B (pt) |
BR (1) | BR8701132A (pt) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4793967A (en) * | 1986-03-12 | 1988-12-27 | Olin Corporation | Cermet substrate with spinel adhesion component |
AU606355B2 (en) * | 1986-08-21 | 1991-02-07 | Moltech Invent S.A. | Cerium containing ceramic/metal composite material |
US5024883A (en) * | 1986-10-30 | 1991-06-18 | Olin Corporation | Electronic packaging of components incorporating a ceramic-glass-metal composite |
US4756754A (en) * | 1987-03-06 | 1988-07-12 | Olin Corporation | Cermet composite |
US4992415A (en) * | 1987-07-31 | 1991-02-12 | Olin Corporation | Method for fabricating ceramic superconductors |
US5073526A (en) * | 1988-01-27 | 1991-12-17 | W. R. Grace & Co.-Conn. | Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite |
US5043535A (en) * | 1989-03-10 | 1991-08-27 | Olin Corporation | Hermetic cerglass and cermet electronic packages |
US5315155A (en) * | 1992-07-13 | 1994-05-24 | Olin Corporation | Electronic package with stress relief channel |
JP4080030B2 (ja) * | 1996-06-14 | 2008-04-23 | 住友電気工業株式会社 | 半導体基板材料、半導体基板、半導体装置、及びその製造方法 |
JP4304749B2 (ja) | 1998-02-24 | 2009-07-29 | 住友電気工業株式会社 | 半導体装置用部材の製造方法 |
JP4367675B2 (ja) * | 1999-10-21 | 2009-11-18 | 日本碍子株式会社 | セラミック製部材と金属製部材の接合用接着剤組成物、同組成物を用いた複合部材の製造方法、および同製造方法により得られた複合部材 |
US6391809B1 (en) * | 1999-12-30 | 2002-05-21 | Corning Incorporated | Copper alumino-silicate glasses |
JP4668438B2 (ja) * | 2001-03-08 | 2011-04-13 | 住友ゴム工業株式会社 | 電磁波シールド板及びその製造方法 |
US6793705B2 (en) | 2001-10-24 | 2004-09-21 | Keystone Investment Corporation | Powder metal materials having high temperature wear and corrosion resistance |
US6761852B2 (en) * | 2002-03-11 | 2004-07-13 | Advanced Materials Technologies Pte. Ltd. | Forming complex-shaped aluminum components |
US6833018B1 (en) * | 2002-05-13 | 2004-12-21 | Keystone Investment Corporation | Powder metal materials including glass |
JP3566269B2 (ja) * | 2002-06-07 | 2004-09-15 | 富士通株式会社 | リードフレーム及びその製造方法、及び半導体装置。 |
TWI477615B (zh) * | 2009-06-05 | 2015-03-21 | Sumitomo Chemical Co | Production method of inorganic particle composite |
US20130126773A1 (en) * | 2011-11-17 | 2013-05-23 | General Electric Company | Coating methods and coated articles |
CN103296344B (zh) * | 2012-03-01 | 2017-11-10 | 深圳光启高等理工研究院 | 一种介质滤波器的介质及其连接方法 |
EP2969318B1 (en) * | 2013-03-15 | 2018-07-25 | Schott Corporation | Glass-metal composites |
CN103786737B (zh) * | 2014-02-19 | 2016-08-17 | 常州市百亿达尔轨道客车配件有限公司 | 列车墙板及其加工工艺 |
CN107881357A (zh) * | 2017-11-14 | 2018-04-06 | 朱森 | 一种氧化锆基金属陶瓷材料的制备方法 |
CN107937790A (zh) * | 2017-11-14 | 2018-04-20 | 朱森 | 一种氧化铝基金属陶瓷材料及其制备方法 |
CN107937791A (zh) * | 2017-11-14 | 2018-04-20 | 朱森 | 一种氧化铝基金属陶瓷材料的制备方法 |
CN107881391A (zh) * | 2017-11-14 | 2018-04-06 | 朱森 | 一种氧化锆基金属陶瓷材料及其制备方法 |
CN107841671A (zh) * | 2017-12-05 | 2018-03-27 | 朱森 | 一种氧化铍基金属陶瓷的制备方法 |
CN107739953A (zh) * | 2017-12-05 | 2018-02-27 | 朱森 | 一种氧化铍基金属陶瓷材料及其制备方法 |
CN109520664A (zh) * | 2018-12-20 | 2019-03-26 | 西安赛尔电子材料科技有限公司 | 一种钛合金压阻式压力传感器基座及其制作方法 |
CN109971996B (zh) * | 2019-04-10 | 2021-02-12 | 江苏宇豪新材料科技有限公司 | 一种能有效提高塑性性能的TiB颗粒增强Ti基复合材料 |
CN109926581B (zh) * | 2019-04-11 | 2021-04-20 | 北京佳美未来科技有限公司 | 一种高温脱粘自粘合的SiCf/Ti基复合材料及制备方法 |
CN109836164A (zh) * | 2019-04-12 | 2019-06-04 | 王小玲 | 一种具有界面脱粘自愈合性能的Cf/SiC复合材料及制备方法 |
CN115821096B (zh) * | 2022-11-30 | 2023-08-18 | 山东硕源工业机械设备有限公司 | 一种陶瓷高铬合金基耐磨复合材料的制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725091A (en) * | 1971-04-12 | 1973-04-03 | Corning Glass Works | Glass-ceramic metal cermets and method |
JPS5752417B2 (pt) * | 1973-05-04 | 1982-11-08 | ||
US4569692A (en) * | 1983-10-06 | 1986-02-11 | Olin Corporation | Low thermal expansivity and high thermal conductivity substrate |
EP0161578A3 (en) * | 1984-05-02 | 1987-11-19 | Rutgers, The State University | Glass coated ceramic particles |
-
1986
- 1986-10-30 US US06/922,271 patent/US4715892A/en not_active Expired - Fee Related
-
1987
- 1987-03-11 EP EP87103500A patent/EP0237047A3/en not_active Ceased
- 1987-03-11 CN CN87101815A patent/CN1013882B/zh not_active Expired
- 1987-03-12 KR KR870002204A patent/KR870009046A/ko not_active Application Discontinuation
- 1987-03-12 BR BR8701132A patent/BR8701132A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
EP0237047A3 (en) | 1988-12-28 |
EP0237047A2 (en) | 1987-09-16 |
KR870009046A (ko) | 1987-10-22 |
CN87101815A (zh) | 1987-09-23 |
CN1013882B (zh) | 1991-09-11 |
US4715892A (en) | 1987-12-29 |
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