BR8306509A - Tiristor de ignicao intriseca e de supressao de sensibilidade em estado nao-condutor e dispositivo bidirecional auto-inflamavel - Google Patents
Tiristor de ignicao intriseca e de supressao de sensibilidade em estado nao-condutor e dispositivo bidirecional auto-inflamavelInfo
- Publication number
- BR8306509A BR8306509A BR8306509A BR8306509A BR8306509A BR 8306509 A BR8306509 A BR 8306509A BR 8306509 A BR8306509 A BR 8306509A BR 8306509 A BR8306509 A BR 8306509A BR 8306509 A BR8306509 A BR 8306509A
- Authority
- BR
- Brazil
- Prior art keywords
- intriseca
- thiristor
- flammable
- ignition
- suppression
- Prior art date
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
- 230000035945 sensitivity Effects 0.000 title 1
- 230000001629 suppression Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/40—Thyristors with turn-on by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13013—Bidirectional Control Thyristor [BCT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13015—DIAC - Bidirectional trigger device
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8219728A FR2536909A1 (fr) | 1982-11-25 | 1982-11-25 | Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR8306509A true BR8306509A (pt) | 1984-07-03 |
Family
ID=9279493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR8306509A BR8306509A (pt) | 1982-11-25 | 1983-11-25 | Tiristor de ignicao intriseca e de supressao de sensibilidade em estado nao-condutor e dispositivo bidirecional auto-inflamavel |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP0110777A1 (en, 2012) |
| JP (1) | JPS59108353A (en, 2012) |
| KR (1) | KR870000152B1 (en, 2012) |
| BR (1) | BR8306509A (en, 2012) |
| DK (1) | DK541383A (en, 2012) |
| ES (1) | ES8501923A1 (en, 2012) |
| FR (1) | FR2536909A1 (en, 2012) |
| IN (1) | IN159925B (en, 2012) |
| ZA (1) | ZA838817B (en, 2012) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2566582B1 (fr) * | 1984-06-22 | 1987-02-20 | Silicium Semiconducteur Ssc | Dispositif bidirectionnel de protection declenche par avalanche |
| FR2566963B1 (fr) * | 1984-06-29 | 1987-03-06 | Silicium Semiconducteur Ssc | Triac de protection sans gachette, realise a partir d'un substrat a haute resistivite |
| DE3573357D1 (en) * | 1984-12-27 | 1989-11-02 | Siemens Ag | Semiconductor power switch |
| FR2579007B1 (fr) * | 1985-03-12 | 1988-09-09 | Telemecanique Electrique | Interrupteur hybride |
| FR2582882A1 (fr) * | 1985-05-30 | 1986-12-05 | Telemecanique Electrique | Relais statique comportant des thyristors normalement conducteurs. |
| EP3235003B1 (en) | 2014-12-17 | 2019-03-06 | ABB Schweiz AG | Bidirectional power semiconductor device |
| JP7432098B2 (ja) * | 2020-03-31 | 2024-02-16 | ヒタチ・エナジー・リミテッド | サイリスタおよびバイポーラ接合トランジスタを備える電力半導体デバイス |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4060825A (en) * | 1976-02-09 | 1977-11-29 | Westinghouse Electric Corporation | High speed high power two terminal solid state switch fired by dV/dt |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| DE2945391A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem abschaltbaren emitter-kurzschluss |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
-
1982
- 1982-11-25 FR FR8219728A patent/FR2536909A1/fr active Granted
-
1983
- 1983-11-23 KR KR1019830005520A patent/KR870000152B1/ko not_active Expired
- 1983-11-23 EP EP83402259A patent/EP0110777A1/fr not_active Withdrawn
- 1983-11-25 JP JP58221950A patent/JPS59108353A/ja active Pending
- 1983-11-25 BR BR8306509A patent/BR8306509A/pt unknown
- 1983-11-25 DK DK541383A patent/DK541383A/da not_active Application Discontinuation
- 1983-11-25 ZA ZA838817A patent/ZA838817B/xx unknown
- 1983-11-25 ES ES527571A patent/ES8501923A1/es not_active Expired
- 1983-11-29 IN IN796/DEL/83A patent/IN159925B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES527571A0 (es) | 1984-12-01 |
| JPS59108353A (ja) | 1984-06-22 |
| IN159925B (en, 2012) | 1987-06-13 |
| DK541383A (da) | 1984-05-26 |
| ES8501923A1 (es) | 1984-12-01 |
| KR840006874A (ko) | 1984-12-03 |
| KR870000152B1 (ko) | 1987-02-12 |
| DK541383D0 (da) | 1983-11-25 |
| FR2536909A1 (fr) | 1984-06-01 |
| FR2536909B1 (en, 2012) | 1985-03-29 |
| ZA838817B (en) | 1984-07-25 |
| EP0110777A1 (fr) | 1984-06-13 |
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