BR112019005755A2 - amplificador de detecção de corrente travada diferencial de cancelamento de compensação de transistor de mos - Google Patents

amplificador de detecção de corrente travada diferencial de cancelamento de compensação de transistor de mos

Info

Publication number
BR112019005755A2
BR112019005755A2 BR112019005755A BR112019005755A BR112019005755A2 BR 112019005755 A2 BR112019005755 A2 BR 112019005755A2 BR 112019005755 A BR112019005755 A BR 112019005755A BR 112019005755 A BR112019005755 A BR 112019005755A BR 112019005755 A2 BR112019005755 A2 BR 112019005755A2
Authority
BR
Brazil
Prior art keywords
input
detection
voltages
voltage
detection amplifier
Prior art date
Application number
BR112019005755A
Other languages
English (en)
Other versions
BR112019005755B1 (pt
Inventor
Kyu Song Byung
Pill Kim Jung
Jung Seong-Ook
Hyuk Kang Seung
Na Taehui
Original Assignee
Univ Yonsei Iacf
Qualcomm Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Yonsei Iacf, Qualcomm Technologies Inc filed Critical Univ Yonsei Iacf
Publication of BR112019005755A2 publication Critical patent/BR112019005755A2/pt
Publication of BR112019005755B1 publication Critical patent/BR112019005755B1/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1697—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Amplifiers (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

são providos amplificadores de detecção (sas) de corrente travada (clsas) de zona morta de detecção zero (zs) de cancelamento de compensação (oc) (oczs-sas) de transistor de semicondutor de óxido metálico (mos), para detecção de voltagens diferenciais. um oczs-sa é configurado para amplificar as voltagens diferenciais de entrada de dados e de referência, recebidas com uma voltagem de compensação de amplificador de detecção menor para fornecer margem de detecção maior entre estados de armazenamento diferentes de célula(s) de bits de memória. o oczs-sa é configurado para cancelar as voltagens de compensação de transistores de entrada e de entrada de complemento, e manter os transistores de entrada e de entrada de complemento em seus estados ativados durante as fases de detecção, de modo que a detecção não seja realizada em suas zonas mortas quando sua voltagem de porta para fonte (vgs) estiver abaixo de suas respectivas voltagens de limiar. em outros aspectos, capacitores de amplificadores de detecção são configurados para armazenar diretamente as voltagens de entrada de dados e de referência nas portas de transistores de entrada e de entrada de complemento durante fases de captura de voltagem para evitar área de leiaute adicional que de outra forma seria consumida com circuitos de capacitor de detecção, adicionais.
BR112019005755-2A 2016-09-23 2017-09-18 Amplificador de detecção de corrente travada diferencial de cancelamento de compensação de transistor de mos BR112019005755B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/274,034 US9852783B1 (en) 2016-09-23 2016-09-23 Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages
US15/274,034 2016-09-23
PCT/US2017/052068 WO2018057460A1 (en) 2016-09-23 2017-09-18 Mos transistor offset-cancelling differential current-latched sense amplifier

Publications (2)

Publication Number Publication Date
BR112019005755A2 true BR112019005755A2 (pt) 2019-06-11
BR112019005755B1 BR112019005755B1 (pt) 2024-02-06

Family

ID=59969283

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112019005755-2A BR112019005755B1 (pt) 2016-09-23 2017-09-18 Amplificador de detecção de corrente travada diferencial de cancelamento de compensação de transistor de mos

Country Status (7)

Country Link
US (1) US9852783B1 (pt)
EP (1) EP3516654B1 (pt)
KR (1) KR102511912B1 (pt)
CN (1) CN111316358B (pt)
AU (2) AU2017332696A1 (pt)
BR (1) BR112019005755B1 (pt)
WO (1) WO2018057460A1 (pt)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10535413B2 (en) * 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US9997239B1 (en) * 2017-05-02 2018-06-12 Everspin Technologies, Inc. Word line overdrive in memory and method therefor
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
US11309005B2 (en) * 2018-10-31 2022-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Current steering in reading magnetic tunnel junction
US10726917B1 (en) * 2019-01-23 2020-07-28 Micron Technology, Inc. Techniques for read operations
US10658022B1 (en) 2019-02-13 2020-05-19 International Business Machines Corporation High gain sense amplifier with offset cancellation for magnetoresistive random access memory
US11910723B2 (en) * 2019-10-31 2024-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with electrically parallel source lines
US11322195B2 (en) 2019-11-27 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Compute in memory system
KR102239742B1 (ko) * 2020-03-02 2021-04-12 인천대학교 산학협력단 읽기 오류의 제거가 가능한 비휘발성 플립플롭의 데이터 복원 모드에서의 동작 방법
US11353909B2 (en) * 2020-03-27 2022-06-07 Synaptics Incorporated Operational amplifier, integrated circuit, and method for operating the same
US11087800B1 (en) * 2020-04-10 2021-08-10 Sandisk Technologies Llc Sense amplifier architecture providing small swing voltage sensing
US11018687B1 (en) * 2020-05-13 2021-05-25 Qualcomm Incorporated Power-efficient compute-in-memory analog-to-digital converters
CN113160859B (zh) * 2021-03-31 2021-12-14 珠海博雅科技有限公司 灵敏放大器及存储器
CN113419200B (zh) * 2021-07-09 2022-05-10 福州大学 探测Bi2Te3表面态六角翘曲的电流诱导自旋极化的方法
KR102652188B1 (ko) * 2023-09-08 2024-03-28 연세대학교 산학협력단 전류 래치 센스 앰프 및 메모리 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2885597B2 (ja) * 1993-03-10 1999-04-26 株式会社東芝 半導体メモリ
US6396733B1 (en) 2000-07-17 2002-05-28 Micron Technology, Inc. Magneto-resistive memory having sense amplifier with offset control
US6803794B2 (en) 2003-02-26 2004-10-12 Raytheon Company Differential capacitance sense amplifier
US7649559B2 (en) * 2006-08-30 2010-01-19 Aptina Imaging Corporation Amplifier offset cancellation devices, systems, and methods
US8233342B2 (en) * 2008-03-14 2012-07-31 International Business Machines Corporation Apparatus and method for implementing write assist for static random access memory arrays
JP5412639B2 (ja) * 2008-10-31 2014-02-12 国立大学法人東京工業大学 比較器及びアナログデジタル変換器
US8521500B2 (en) * 2010-08-24 2013-08-27 International Business Machines Corporation Method and device for measuring integrated circuit power supply noise and calibration of power supply noise analysis models
US8072244B1 (en) * 2010-08-31 2011-12-06 National Tsing Hua University Current sensing amplifier and method thereof
KR20120058057A (ko) * 2010-11-29 2012-06-07 삼성전자주식회사 오프셋 제거 회로, 샘플링 회로 및 이미지 센서
US9140747B2 (en) * 2013-07-22 2015-09-22 Qualcomm Incorporated Sense amplifier offset voltage reduction
US9165630B2 (en) * 2013-08-30 2015-10-20 Qualcomm Incorporated Offset canceling dual stage sensing circuit
US9111623B1 (en) * 2014-02-12 2015-08-18 Qualcomm Incorporated NMOS-offset canceling current-latched sense amplifier
US9384792B2 (en) * 2014-04-09 2016-07-05 Globalfoundries Inc. Offset-cancelling self-reference STT-MRAM sense amplifier
US20150341023A1 (en) * 2014-05-22 2015-11-26 Spansion Llc Methods, Circuits, Devices and Systems for Comparing Signals
US9711206B2 (en) * 2014-06-05 2017-07-18 Micron Technology, Inc. Performing logical operations using sensing circuitry
US9691462B2 (en) * 2014-09-27 2017-06-27 Qualcomm Incorporated Latch offset cancelation for magnetoresistive random access memory

Also Published As

Publication number Publication date
BR112019005755B1 (pt) 2024-02-06
KR20190053854A (ko) 2019-05-20
CN111316358A (zh) 2020-06-19
AU2022209322A1 (en) 2022-09-01
EP3516654B1 (en) 2020-10-21
AU2017332696A1 (en) 2019-03-07
CN111316358B (zh) 2023-09-22
WO2018057460A1 (en) 2018-03-29
US9852783B1 (en) 2017-12-26
EP3516654A1 (en) 2019-07-31
KR102511912B1 (ko) 2023-03-17

Similar Documents

Publication Publication Date Title
BR112019005755A2 (pt) amplificador de detecção de corrente travada diferencial de cancelamento de compensação de transistor de mos
BR112016028619A2 (pt) sensor de temperatura de baixa potência e baixo custo
JP2015187902A5 (ja) 半導体装置
WO2017176467A3 (en) Charge extraction from ferroelectric memory cell
JP2014038603A5 (pt)
BRPI0809982A2 (pt) Métodos de projeto e memória de acesso aleatório magnetorresistiva de transferência de torque por meio de spin.
JP2015149474A5 (pt)
JP2014006516A5 (ja) 半導体装置
WO2014137652A3 (en) Vertical bit line tft decoder for high voltage operation
JP2013235564A5 (pt)
WO2016137685A3 (en) Read-assist circuits for memory bit cells employing a p-type field-effect transistor (pfet) read port(s), and related memory systems and methods
JP2012142066A5 (pt)
JP2013149969A5 (pt)
JP2013254945A5 (pt)
JP2011129896A5 (ja) 半導体装置
WO2017111798A8 (en) High retention time memory element with dual gate devices
JP2015018594A5 (ja) 記憶装置
JP2014002133A5 (pt)
JP2012256400A5 (pt)
WO2017155814A3 (en) Memory cell sensing with storage component isolation
JP2013009300A5 (ja) 記憶装置
WO2014167292A3 (en) Memory with local-/global bit line architecture and additional capacitance for global bit line discharge in reading
BR112015016671A2 (pt) dispositivo semicondutor que tem recursos para evitar engenharia reversa
JP2013150313A5 (pt)
BR112018069912A2 (pt) circuitos de entrada/saída (e/s) isolados de descarga eletrostática (esd)

Legal Events

Date Code Title Description
B350 Update of information on the portal [chapter 15.35 patent gazette]
B06W Patent application suspended after preliminary examination (for patents with searches from other patent authorities) chapter 6.23 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 18/09/2017, OBSERVADAS AS CONDICOES LEGAIS