BR112019000429A2 - módulo detector, detector, aparelho de imageamento e método de fabricação de um módulo detector - Google Patents

módulo detector, detector, aparelho de imageamento e método de fabricação de um módulo detector

Info

Publication number
BR112019000429A2
BR112019000429A2 BR112019000429A BR112019000429A BR112019000429A2 BR 112019000429 A2 BR112019000429 A2 BR 112019000429A2 BR 112019000429 A BR112019000429 A BR 112019000429A BR 112019000429 A BR112019000429 A BR 112019000429A BR 112019000429 A2 BR112019000429 A2 BR 112019000429A2
Authority
BR
Brazil
Prior art keywords
direct conversion
integrated circuit
conversion crystal
detector
detector module
Prior art date
Application number
BR112019000429A
Other languages
English (en)
Inventor
Livne Amir
Herrmann Christoph
Steadman Booker Roger
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112019000429A2 publication Critical patent/BR112019000429A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
    • A61B6/03—Computed tomography [CT]
    • A61B6/032—Transmission computed tomography [CT]
    • A61B6/035—Mechanical aspects of CT
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Medical Informatics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Surgery (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Pathology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Pulmonology (AREA)
  • Biophysics (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

a presente invenção se refere a um módulo detector que compreende um cristal de conversão direta (10) para converter fótons incidentes em sinais elétricos, sendo que o dito cristal de conversão direta tem uma metalização do cátodo (100) depositada sobre uma primeira superfície e uma metalização do ânodo (101) depositada sobre uma segunda superfície, um circuito integrado (12) em comunicação elétrica com o dito cristal de conversão direta, sendo que o dito circuito integrado tem uma largura menor que o dito cristal de conversão direta formando assim uma reentrância (120) na direção da largura em uma superfície lateral do circuito integrado, um substrato intermediário (11, 11a) disposto entre o dito cristal de conversão direta e o dito circuito integrado para fornecer comunicação elétrica entre os mesmos, sendo que o dito substrato intermediário é produzido como um elemento separado que é colado, soldado ou unido à metalização do ânodo (101) do dito cristal de conversão direta voltada para o dito circuito integrado, e um cabo flexível multifios (13, 13a, 13b, 13c, 13d) que fornece uma pluralidade de caminhos de saída, sendo que o dito cabo flexível multifios tem uma primeira porção (131, 131a, 131b, 131c, 131d) conectada por uma superfície ao dito cristal de conversão direta e pela superfície oposta ao dito circuito integrado (12), e uma segunda porção (132), que é flexionada em relação à primeira porção e é disposta na dita reentrância.
BR112019000429A 2016-07-14 2017-07-14 módulo detector, detector, aparelho de imageamento e método de fabricação de um módulo detector BR112019000429A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP16179411 2016-07-14
PCT/EP2017/067852 WO2018011399A1 (en) 2016-07-14 2017-07-14 Detector module, detector, imaging apparatus and method of manufacturing a detector module

Publications (1)

Publication Number Publication Date
BR112019000429A2 true BR112019000429A2 (pt) 2019-04-30

Family

ID=56740808

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112019000429A BR112019000429A2 (pt) 2016-07-14 2017-07-14 módulo detector, detector, aparelho de imageamento e método de fabricação de um módulo detector

Country Status (7)

Country Link
US (1) US10868074B2 (pt)
EP (1) EP3485514B1 (pt)
JP (1) JP6842528B2 (pt)
CN (1) CN109478556B (pt)
BR (1) BR112019000429A2 (pt)
RU (1) RU2019103999A (pt)
WO (1) WO2018011399A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230333267A1 (en) * 2020-05-13 2023-10-19 Dectris Ag Radiation detector and method of manufacture thereof
CN111640131B (zh) * 2020-05-29 2021-05-18 广东利元亨智能装备股份有限公司 电芯涂胶检测方法、装置和电子设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158341A (ja) 2000-11-17 2002-05-31 Canon Inc 撮像装置
US7564125B2 (en) * 2002-12-06 2009-07-21 General Electric Company Electronic array and methods for fabricating same
US20050286682A1 (en) * 2004-06-29 2005-12-29 General Electric Company Detector for radiation imaging systems
DE102005037902A1 (de) 2005-08-10 2007-02-15 Siemens Ag Detektormodul, Detektor und Computertomographiegerät
JP4046138B2 (ja) * 2006-05-24 2008-02-13 株式会社村田製作所 ワーク搬送装置及び電子部品搬送装置
US7916836B2 (en) * 2007-09-26 2011-03-29 General Electric Company Method and apparatus for flexibly binning energy discriminating data
JP5281484B2 (ja) * 2009-05-28 2013-09-04 浜松ホトニクス株式会社 放射線検出ユニット
US20100327173A1 (en) * 2009-06-29 2010-12-30 Charles Gerard Woychik Integrated Direct Conversion Detector Module
JP5358509B2 (ja) * 2010-04-15 2013-12-04 浜松ホトニクス株式会社 放射線検出器モジュール
US20130049151A1 (en) * 2011-08-31 2013-02-28 General Electric Company Anode-illuminated radiation detector
FI124818B (fi) 2011-10-06 2015-02-13 Advacam Oy Hybridipikseli-ilmaisinrakenne ja tämän valmistusmenetelmä
EP2852851A1 (en) 2012-05-22 2015-04-01 Analogic Corporation Detection system and detector array interconnect assemblies
JP5424371B1 (ja) * 2013-05-08 2014-02-26 誠 雫石 固体撮像素子及び撮像装置
CN106662661B (zh) 2014-10-31 2019-06-25 皇家飞利浦有限公司 用于探测辐射信号的传感器设备和成像系统

Also Published As

Publication number Publication date
WO2018011399A1 (en) 2018-01-18
JP2019523402A (ja) 2019-08-22
US10868074B2 (en) 2020-12-15
EP3485514A1 (en) 2019-05-22
RU2019103999A (ru) 2020-08-14
US20190280036A1 (en) 2019-09-12
JP6842528B2 (ja) 2021-03-17
CN109478556B (zh) 2023-07-14
CN109478556A (zh) 2019-03-15
EP3485514B1 (en) 2020-09-09

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]