BR112018006139A2 - dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz - Google Patents

dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz

Info

Publication number
BR112018006139A2
BR112018006139A2 BR112018006139A BR112018006139A BR112018006139A2 BR 112018006139 A2 BR112018006139 A2 BR 112018006139A2 BR 112018006139 A BR112018006139 A BR 112018006139A BR 112018006139 A BR112018006139 A BR 112018006139A BR 112018006139 A2 BR112018006139 A2 BR 112018006139A2
Authority
BR
Brazil
Prior art keywords
light emitting
emitting device
light
processing
manufacturing
Prior art date
Application number
BR112018006139A
Other languages
English (en)
Inventor
Moench Holger
Schuermann Mark
Miller Michael
Dannberg Peter
Gronenborn Stephan
Original Assignee
Koninklijke Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Nv filed Critical Koninklijke Philips Nv
Publication of BR112018006139A2 publication Critical patent/BR112018006139A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

a invenção se refere a um dispositivo emissor de luz (100). o dispositivo emissor de luz (100) compreende pelo menos uma estrutura emissora de luz (110), pelo menos uma camada de processamento (120) e pelo menos uma estrutura óptica (130). a estrutura óptica (130) compreende pelo menos um material processado por meio de luz de processamento (150). a pelo menos uma camada de processamento (120) é disposta para reduzir a reflexão da luz de processamento (150) em uma direção da estrutura óptica (130) em pelo menos 50%, de preferência em pelo menos 80%, com mais preferência em pelo menos 95% e com a máxima preferência em pelo menos 99%, durante o processamento do material por meio da luz de processamento (150). é uma ideia básica da presente invenção incorporar uma camada de processamento com pouca ou nenhuma reflexão (120) sobre uma estrutura emissora de luz (110) como uma matriz de laser de emissão de superfície de cavidade vertical (vcsel - ?vertical cavity surface emitting laser?) para possibilitar o processamento em pastilha de estruturas emissoras de luz (130) como matrizes de microlentes. a invenção se refere adicionalmente a um método de fabricação de tal dispositivo emissor de luz (100).
BR112018006139A 2015-10-01 2016-09-22 dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz BR112018006139A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15187849 2015-10-01
PCT/EP2016/072498 WO2017055160A1 (en) 2015-10-01 2016-09-22 Light emitting device

Publications (1)

Publication Number Publication Date
BR112018006139A2 true BR112018006139A2 (pt) 2018-10-23

Family

ID=54252121

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112018006139A BR112018006139A2 (pt) 2015-10-01 2016-09-22 dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz

Country Status (7)

Country Link
US (1) US10381802B2 (pt)
EP (1) EP3357134A1 (pt)
JP (1) JP6783435B2 (pt)
CN (1) CN108141011B (pt)
BR (1) BR112018006139A2 (pt)
RU (1) RU2713080C1 (pt)
WO (1) WO2017055160A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3447862A1 (en) 2017-08-23 2019-02-27 Koninklijke Philips N.V. Vcsel array with common wafer level integrated optical device
EP3451470A1 (en) 2017-08-30 2019-03-06 Koninklijke Philips N.V. Laser arrangement comprising a vcsel array
EP3561553A1 (en) 2018-04-25 2019-10-30 Koninklijke Philips N.V. Laser arrangement with reduced scattering loss
EP3598591A1 (en) 2018-07-17 2020-01-22 Koninklijke Philips N.V. Laser arrangement with reduced building height
US11641007B2 (en) 2019-12-16 2023-05-02 Lumileds Llc Light-emitting device with internal non-specular light redirection and anti-reflective exit surface
DE102021211736A1 (de) 2021-10-18 2023-04-20 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zu einer Erzeugung von Mikrooptiken auf Oberflächenemitter-Laserdioden (VCSEL)

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62112102A (ja) * 1985-11-12 1987-05-23 Dainippon Printing Co Ltd 反射防止光学フイルタ−
US6235141B1 (en) 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
US6410209B1 (en) * 1998-09-15 2002-06-25 Shipley Company, L.L.C. Methods utilizing antireflective coating compositions with exposure under 200 nm
US6117618A (en) * 1998-11-04 2000-09-12 Advanced Micro Devices, Inc. Carbonized antireflective coating produced by spin-on polymer material
JP2002026452A (ja) * 2000-07-12 2002-01-25 Toyota Central Res & Dev Lab Inc 面発光型光源及びその製造方法、レーザ加工機用光源
JP2002208755A (ja) * 2000-11-13 2002-07-26 Fuji Xerox Co Ltd 面発光型半導体レーザ
US7065656B2 (en) 2001-07-03 2006-06-20 Hewlett-Packard Development Company, L.P. Tamper-evident/tamper-resistant electronic components
JP2004119583A (ja) * 2002-09-25 2004-04-15 Seiko Epson Corp 光学素子の製造方法
EP1460738A3 (en) 2003-03-21 2004-09-29 Avalon Photonics AG Wafer-scale replication-technique for opto-mechanical structures on opto-electronic devices
JP2005072130A (ja) * 2003-08-21 2005-03-17 Mitsubishi Electric Corp 半導体レーザ装置
JP2005092049A (ja) * 2003-09-19 2005-04-07 Seiko Epson Corp 吐出方法、レンズおよびその製造方法、半導体レーザおよびその製造方法、光学装置、ならびに吐出装置
EP1569276A1 (en) 2004-02-27 2005-08-31 Heptagon OY Micro-optics on optoelectronics
US7429915B2 (en) 2005-04-20 2008-09-30 Honeywell International Inc. System and method for detecting unauthorized access to electronic equipment or components
JP4720621B2 (ja) 2005-06-09 2011-07-13 セイコーエプソン株式会社 レーザ光源装置、表示装置、走査型表示装置およびプロジェクタ
JP2007258667A (ja) * 2006-02-21 2007-10-04 Seiko Epson Corp 光電気複合基板及び電子機器
CN101026285A (zh) * 2006-02-21 2007-08-29 精工爱普生株式会社 光电复合基板以及电子设备
JP2011515846A (ja) * 2008-03-21 2011-05-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光装置
JP5768410B2 (ja) * 2010-04-22 2015-08-26 信越化学工業株式会社 近赤外光吸収膜形成材料及び積層膜
CN101887939A (zh) * 2010-05-24 2010-11-17 晶科电子（广州）有限公司 一种提高led外量子效率的封装结构及其封装方法
US8288857B2 (en) 2010-09-17 2012-10-16 Endicott Interconnect Technologies, Inc. Anti-tamper microchip package based on thermal nanofluids or fluids
CN103681293B (zh) * 2012-09-10 2016-04-20 中芯国际集成电路制造(上海)有限公司 自对准双重图形化方法
CN103178161B (zh) * 2013-03-21 2016-04-20 武汉电信器件有限公司 一种微透镜的制作方法
JP6461786B2 (ja) * 2013-03-29 2019-01-30 アイオーコア株式会社 光電気混載デバイス及びその製造方法
CN204290034U (zh) * 2014-11-10 2015-04-22 李德龙 基于光学灌封工艺的vcsel阵列封装结构及其高功率vcsel激光器

Also Published As

Publication number Publication date
CN108141011B (zh) 2020-09-01
JP6783435B2 (ja) 2020-11-11
CN108141011A (zh) 2018-06-08
US10381802B2 (en) 2019-08-13
US20180278024A1 (en) 2018-09-27
JP2018530158A (ja) 2018-10-11
RU2713080C1 (ru) 2020-02-03
EP3357134A1 (en) 2018-08-08
WO2017055160A1 (en) 2017-04-06

Similar Documents

Publication Publication Date Title
BR112018006139A2 (pt) dispositivo emissor de luz e método de fabricação de um dispositivo emissor de luz
EP3875850A3 (en) Light-emitting device
WO2016040927A3 (en) Diffusive light illuminator
TW201614355A (en) LED lighting unit
MX2018010793A (es) Cristal compuesto iluminable.
MX2016012804A (es) Dispositivo de procesamiento y metodo de procesamiento.
WO2011021140A3 (en) Vertical cavity surface emitting laser array device with configurable intensity distribution
BR112018006931A2 (pt) ?dispositivo emissor de luz, e, módulo emissor de luz?
BR112015030722A2 (pt) aparelho emissor de luz semicondutor
CY1124228T1 (el) Συστοιχια φακων και μεθοδος κατασκευης συστοιχιας φακων
MX359023B (es) Barra luminosa.
WO2015022645A3 (en) Stage light fixture
EP2963744A3 (en) Surface emitting laser and optical coherence tomography apparatus including the same
EP3754734A4 (en) ORGANIC LIGHT DIODE
BR112012000156A8 (pt) Dispositivo de fototerapia
IN2014DE03117A (pt)
WO2014049051A3 (en) Illumination devices using array of reflectors
EP3686943A4 (en) ORGANIC LIGHT DIODE
RU2017112983A (ru) Гибкое светоизлучающее устройство
WO2016009045A3 (de) Seitenlichtfaser
EP3093899A3 (en) Organic light emitting diode display
EP3425755A4 (en) SURFACE-LIGHT EMITTING LASER
AR102788A1 (es) Elemento inyector de luz y fotobiorreactor que lo incluye
MX2018014884A (es) Envase para un liquido transparente.
EA201792323A1 (ru) Защищенный документ и способ его изготовления

Legal Events

Date Code Title Description
B06U Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements