BR112016024089A2 - receptor de alta tensão usando dispositivos de baixa tensão - Google Patents

receptor de alta tensão usando dispositivos de baixa tensão

Info

Publication number
BR112016024089A2
BR112016024089A2 BR112016024089A BR112016024089A BR112016024089A2 BR 112016024089 A2 BR112016024089 A2 BR 112016024089A2 BR 112016024089 A BR112016024089 A BR 112016024089A BR 112016024089 A BR112016024089 A BR 112016024089A BR 112016024089 A2 BR112016024089 A2 BR 112016024089A2
Authority
BR
Brazil
Prior art keywords
signal
high voltage
voltage domain
receiver
chopped
Prior art date
Application number
BR112016024089A
Other languages
English (en)
Portuguese (pt)
Inventor
Tan Chiew-Guan
Jalilizeinali Reza
Jianbo Chen Wilson
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BR112016024089A2 publication Critical patent/BR112016024089A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
BR112016024089A 2014-04-16 2015-03-11 receptor de alta tensão usando dispositivos de baixa tensão BR112016024089A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/254,706 US9184735B1 (en) 2014-04-16 2014-04-16 High-voltage input receiver using low-voltage devices
PCT/US2015/019958 WO2015160452A2 (en) 2014-04-16 2015-03-11 High-voltage input receiver using low-voltage devices

Publications (1)

Publication Number Publication Date
BR112016024089A2 true BR112016024089A2 (pt) 2017-08-15

Family

ID=52781288

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016024089A BR112016024089A2 (pt) 2014-04-16 2015-03-11 receptor de alta tensão usando dispositivos de baixa tensão

Country Status (7)

Country Link
US (1) US9184735B1 (https=)
EP (1) EP3132539B1 (https=)
JP (1) JP6321211B2 (https=)
KR (1) KR101869355B1 (https=)
CN (1) CN106464238B (https=)
BR (1) BR112016024089A2 (https=)
WO (1) WO2015160452A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9735763B1 (en) * 2016-03-28 2017-08-15 Qualcomm Incorporated High voltage input receiver using low-voltage devices
US10700683B1 (en) 2018-08-28 2020-06-30 Qualcomm Incorporated Dynamic power supply shifting
US12592701B2 (en) 2022-10-21 2026-03-31 Samsung Electronics Co., Ltd. Level shifter and semiconductor device including the same
CN118971860B (zh) * 2024-10-12 2025-04-22 无锡力芯微电子股份有限公司 一种高压斩波开关控制信号的产生电路

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165006A (en) 1979-06-11 1980-12-23 Matsushita Electric Ind Co Ltd Audio equipment
US5150069A (en) 1990-04-06 1992-09-22 Hughes Aircraft Company Waveform tracking clipper circuit
US5966026A (en) * 1995-02-14 1999-10-12 Advanced Micro Devices, Inc. Output buffer with improved tolerance to overvoltage
JPH08265065A (ja) 1995-03-28 1996-10-11 Toshiba Corp 増幅回路
US6525607B1 (en) 2000-09-27 2003-02-25 Intel Corporation High-voltage differential input receiver
US6577163B1 (en) * 2000-12-21 2003-06-10 Cypress Semiconductor Corp. Configurable PCI clamp or high voltage tolerant I/O circuit
US6600338B1 (en) 2001-05-04 2003-07-29 Rambus, Inc. Apparatus and method for level-shifting input receiver circuit from high external voltage to low internal supply voltage
US6650167B1 (en) * 2002-06-06 2003-11-18 Broadcom Corporation Multi-level/single ended input level shifter circuit
US20040075468A1 (en) 2002-10-16 2004-04-22 Bryan Haskin Digital signal driver circuit
US6999739B2 (en) * 2002-12-05 2006-02-14 Agilent Technologies, Inc. Stacked FET receiver method and apparatus
JP2004192902A (ja) * 2002-12-10 2004-07-08 Ushio Inc ランプ点灯装置
US6879198B2 (en) 2002-12-18 2005-04-12 Stmicroelectronics Pvt. Ltd. Differential input receiver with hysteresis
JP4979955B2 (ja) * 2006-02-02 2012-07-18 フリースケール セミコンダクター インコーポレイテッド レベルシフタ回路
JP4825660B2 (ja) * 2006-12-26 2011-11-30 三菱電機株式会社 超電導コイル用電力変換装置
US7825607B1 (en) * 2007-11-23 2010-11-02 Zhen Qiu Huang D-c to d-c converter circuit
US8482329B2 (en) 2008-08-08 2013-07-09 Lsi Corporation High voltage input receiver with hysteresis using low voltage transistors
JP5361555B2 (ja) * 2009-06-16 2013-12-04 株式会社東芝 電力変換装置
JP2011188655A (ja) * 2010-03-10 2011-09-22 Univ Of Tokushima 直流・交流電力変換制御装置
JP5632664B2 (ja) * 2010-06-29 2014-11-26 パナソニック株式会社 半導体発光素子の点灯装置およびそれを用いた照明器具
US8665021B2 (en) * 2012-07-17 2014-03-04 Analog Devices, Inc. Apparatus and methods for amplifier power supply control

Also Published As

Publication number Publication date
WO2015160452A2 (en) 2015-10-22
CN106464238B (zh) 2019-04-16
KR20160145011A (ko) 2016-12-19
US9184735B1 (en) 2015-11-10
EP3132539B1 (en) 2017-11-29
CN106464238A (zh) 2017-02-22
JP6321211B2 (ja) 2018-05-09
KR101869355B1 (ko) 2018-06-21
WO2015160452A3 (en) 2016-01-21
US20150303906A1 (en) 2015-10-22
EP3132539A2 (en) 2017-02-22
JP2017514387A (ja) 2017-06-01

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 5A ANUIDADE.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2557 DE 07/01/2020.

B350 Update of information on the portal [chapter 15.35 patent gazette]