BR112015011665A2 - método para formar um elemento de monocristal e um elemento cortante para uma broca de perfuração de corte fixo, e broca de perfuração. - Google Patents

método para formar um elemento de monocristal e um elemento cortante para uma broca de perfuração de corte fixo, e broca de perfuração.

Info

Publication number
BR112015011665A2
BR112015011665A2 BR112015011665A BR112015011665A BR112015011665A2 BR 112015011665 A2 BR112015011665 A2 BR 112015011665A2 BR 112015011665 A BR112015011665 A BR 112015011665A BR 112015011665 A BR112015011665 A BR 112015011665A BR 112015011665 A2 BR112015011665 A2 BR 112015011665A2
Authority
BR
Brazil
Prior art keywords
drill bit
forming
single crystal
fixed cut
cutting element
Prior art date
Application number
BR112015011665A
Other languages
English (en)
Inventor
Zhan Guodong
S Nixon Michael
Original Assignee
Nat Oilwell Dht Lp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Oilwell Dht Lp filed Critical Nat Oilwell Dht Lp
Publication of BR112015011665A2 publication Critical patent/BR112015011665A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D99/00—Subject matter not provided for in other groups of this subclass
    • B24D99/005—Segments of abrasive wheels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH DRILLING; MINING
    • E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH DRILLING; MINING
    • E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/54—Drill bits characterised by wear resisting parts, e.g. diamond inserts the bit being of the rotary drag type, e.g. fork-type bits
    • E21B10/55—Drill bits characterised by wear resisting parts, e.g. diamond inserts the bit being of the rotary drag type, e.g. fork-type bits with preformed cutting elements
    • E—FIXED CONSTRUCTIONS
    • E21—EARTH DRILLING; MINING
    • E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
    • E21B10/00—Drill bits
    • E21B10/46—Drill bits characterised by wear resisting parts, e.g. diamond inserts
    • E21B10/56—Button-type inserts
    • E21B10/567—Button-type inserts with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
BR112015011665A 2012-11-21 2013-11-18 método para formar um elemento de monocristal e um elemento cortante para uma broca de perfuração de corte fixo, e broca de perfuração. BR112015011665A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261728920P 2012-11-21 2012-11-21
PCT/US2013/070512 WO2014081654A1 (en) 2012-11-21 2013-11-18 Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds

Publications (1)

Publication Number Publication Date
BR112015011665A2 true BR112015011665A2 (pt) 2017-07-11

Family

ID=49726868

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015011665A BR112015011665A2 (pt) 2012-11-21 2013-11-18 método para formar um elemento de monocristal e um elemento cortante para uma broca de perfuração de corte fixo, e broca de perfuração.

Country Status (7)

Country Link
US (1) US9976231B2 (pt)
BR (1) BR112015011665A2 (pt)
CA (1) CA2892056C (pt)
GB (1) GB2526940A (pt)
RU (1) RU2638220C2 (pt)
SG (1) SG11201504017WA (pt)
WO (1) WO2014081654A1 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104164703B (zh) * 2014-08-08 2018-05-29 上海交通大学 一种超细金刚石单晶微粉的制备方法
CN104164702A (zh) * 2014-08-08 2014-11-26 上海交通大学 一种硼掺杂超/精细金刚石单晶微粉的制备方法
US10350733B2 (en) * 2014-12-10 2019-07-16 Smith International, Inc. Ultra-hard material cutting elements and methods of manufacturing the same with a metal-rich intermediate layer
CN107023261B (zh) * 2017-06-14 2023-08-25 吉林大学 一种坚硬打滑地层金刚石复合钻头及其制备方法
DE102018119445A1 (de) * 2018-08-09 2020-02-13 Hartmetall-Werkzeugfabrik Paul Horn Gmbh Bohrwerkzeug
CN112337403B (zh) * 2020-11-04 2021-09-28 吉林大学 一种表面增强的三脊异形聚晶金刚石复合片及其制备方法

Family Cites Families (22)

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ZA877921B (en) * 1986-12-22 1988-04-21 General Electric Company Condensate diamond
US5011509A (en) 1989-08-07 1991-04-30 Frushour Robert H Composite compact with a more thermally stable cutting edge and method of manufacturing the same
JPH0393694A (ja) 1989-09-06 1991-04-18 Sumitomo Electric Ind Ltd 砥粒の製造方法
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
CA2054050C (en) 1990-11-16 1998-07-07 Louis K. Bigelow Method and apparatus for making grit and abrasive media
CA2087765A1 (en) 1992-02-07 1993-08-08 David E. Slutz Method for producing uniform cylindrical tubes of cvd diamond
CA2089288A1 (en) 1992-03-20 1993-09-21 David E. Slutz Multilayer cvd diamond films
US6068070A (en) 1997-09-03 2000-05-30 Baker Hughes Incorporated Diamond enhanced bearing for earth-boring bit
AU6831394A (en) * 1993-05-17 1994-12-12 North Carolina State University Method for fabricating oriented diamond films
US5437891A (en) 1994-06-23 1995-08-01 General Electric Company Chemical vapor deposition of polycrystalline diamond with <100> orientation and <100> growth facets
US5954147A (en) 1997-07-09 1999-09-21 Baker Hughes Incorporated Earth boring bits with nanocrystalline diamond enhanced elements
DE10102685B4 (de) 2001-01-22 2004-04-08 Fico Cables, S.A., Rubi Betätigungsmechanismus mit Kraftsensor für eine Bremse
US7517588B2 (en) 2003-10-08 2009-04-14 Frushour Robert H High abrasion resistant polycrystalline diamond composite
US7595110B2 (en) 2003-10-08 2009-09-29 Frushour Robert H Polycrystalline diamond composite
WO2007018555A2 (en) 2004-09-10 2007-02-15 Carnegie Institution Of Washington Ultratough cvd single crystal diamond and three dimensional growth thereof
US20060147631A1 (en) 2005-01-04 2006-07-06 Lev Leonid C Method for making diamond coated substrates, articles made therefrom, and method of drilling
GB0508889D0 (en) * 2005-04-29 2005-06-08 Element Six Ltd Diamond transistor and method of manufacture thereof
AU2006251553B2 (en) * 2005-05-25 2011-09-08 Carnegie Institution Of Washington Colorless single-crystal CVD diamond at rapid growth rate
US7462003B2 (en) * 2005-08-03 2008-12-09 Smith International, Inc. Polycrystalline diamond composite constructions comprising thermally stable diamond volume
CA2765710A1 (en) 2009-06-18 2010-12-23 Smith International, Inc. Polycrystalline diamond cutting elements with engineered porosity and method for manufacturing such cutting elements
GB0915971D0 (en) 2009-09-11 2009-10-28 Element Six Ltd Polycrysalline diamond composite compact elements, tools incorporating same, method for making same and method for using same
US20120255237A1 (en) * 2011-04-08 2012-10-11 Robert Frushour Cool cutting polycrystalline diamond cutting element

Also Published As

Publication number Publication date
US20150299901A1 (en) 2015-10-22
GB2526940A (en) 2015-12-09
US9976231B2 (en) 2018-05-22
RU2015119799A (ru) 2017-01-10
GB201509001D0 (en) 2015-07-08
CA2892056C (en) 2019-11-12
WO2014081654A1 (en) 2014-05-30
CA2892056A1 (en) 2014-05-30
SG11201504017WA (en) 2015-06-29
RU2638220C2 (ru) 2017-12-12

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06I Publication of requirement cancelled [chapter 6.9 patent gazette]

Free format text: ANULADA A PUBLICACAO CODIGO 6.6.1 NA RPI NO 2462 DE 13/03/2018 POR TER SIDO INDEVIDA.

B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements