BR112015004076A2 - vidro de cobertura reativo sobre silício fundido durante solidificação direcional - Google Patents

vidro de cobertura reativo sobre silício fundido durante solidificação direcional

Info

Publication number
BR112015004076A2
BR112015004076A2 BR112015004076A BR112015004076A BR112015004076A2 BR 112015004076 A2 BR112015004076 A2 BR 112015004076A2 BR 112015004076 A BR112015004076 A BR 112015004076A BR 112015004076 A BR112015004076 A BR 112015004076A BR 112015004076 A2 BR112015004076 A2 BR 112015004076A2
Authority
BR
Brazil
Prior art keywords
cover glass
directional solidification
glass during
during directional
fused silicon
Prior art date
Application number
BR112015004076A
Other languages
English (en)
Inventor
Alain Turenne
Original Assignee
Silicor Mat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicor Mat Inc filed Critical Silicor Mat Inc
Publication of BR112015004076A2 publication Critical patent/BR112015004076A2/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
BR112015004076A 2012-08-31 2013-08-30 vidro de cobertura reativo sobre silício fundido durante solidificação direcional BR112015004076A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261695517P 2012-08-31 2012-08-31
PCT/US2013/057465 WO2014036373A1 (en) 2012-08-31 2013-08-30 Reactive cover glass over molten silicon during directional solidification

Publications (1)

Publication Number Publication Date
BR112015004076A2 true BR112015004076A2 (pt) 2017-07-04

Family

ID=49165866

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015004076A BR112015004076A2 (pt) 2012-08-31 2013-08-30 vidro de cobertura reativo sobre silício fundido durante solidificação direcional

Country Status (8)

Country Link
US (1) US20150225247A1 (pt)
EP (1) EP2890636B1 (pt)
JP (1) JP6055100B2 (pt)
KR (1) KR101750635B1 (pt)
CN (1) CN104718160B (pt)
BR (1) BR112015004076A2 (pt)
TW (1) TWI499558B (pt)
WO (1) WO2014036373A1 (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI628145B (zh) * 2013-01-29 2018-07-01 希利柯爾材料股份有限公司 用於純化矽之覆蓋助熔劑及方法
CN105364001B (zh) * 2015-10-16 2017-10-27 沈阳工业大学 液态金属冷却定向凝固叶片表面除锡方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1180968A (en) * 1912-09-18 1916-04-25 Carborundum Co Process for purifying silicon.
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
DE3338335A1 (de) * 1983-10-21 1985-05-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von grossflaechigen siliziumkristallkoerpern fuer solarzellen
CA2232777C (en) * 1997-03-24 2001-05-15 Hiroyuki Baba Method for producing silicon for use in solar cells
JPH10324515A (ja) * 1997-03-24 1998-12-08 Kawasaki Steel Corp 太陽電池用シリコンの製造方法
JP4856973B2 (ja) * 2005-03-07 2012-01-18 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
JP4850501B2 (ja) * 2005-12-06 2012-01-11 新日鉄マテリアルズ株式会社 高純度シリコンの製造装置及び製造方法
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
CN101302012A (zh) * 2007-05-08 2008-11-12 黄东 太阳能电池用光伏硅提纯工艺
US20100140558A1 (en) * 2008-12-09 2010-06-10 Bp Corporation North America Inc. Apparatus and Method of Use for a Top-Down Directional Solidification System
CN101774584B (zh) * 2009-01-09 2011-12-21 华南师范大学 太阳能级硅的提纯方法
CN101665253B (zh) * 2009-09-29 2010-10-13 包头市山晟新能源有限责任公司 多晶硅提纯方法及用于多晶硅提纯的坩埚、提纯设备

Also Published As

Publication number Publication date
KR101750635B1 (ko) 2017-06-23
CN104718160A (zh) 2015-06-17
JP6055100B2 (ja) 2016-12-27
US20150225247A1 (en) 2015-08-13
TWI499558B (zh) 2015-09-11
KR20150052180A (ko) 2015-05-13
EP2890636A1 (en) 2015-07-08
JP2015532635A (ja) 2015-11-12
WO2014036373A1 (en) 2014-03-06
TW201412641A (zh) 2014-04-01
CN104718160B (zh) 2017-03-08
EP2890636B1 (en) 2016-06-22

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06I Publication of requirement cancelled [chapter 6.9 patent gazette]

Free format text: ANULADA A PUBLICACAO CODIGO 6.6.1 NA RPI NO 2462 DE 13/03/2018 POR TER SIDO INDEVIDA.

B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2477 DE 26-06-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.