BR112013009200A2 - controle da estequiometria de camadas i-iii-iv para aplicações fotovoltaicas, a partir de condições de eletrólise aperfeiçoadas - Google Patents

controle da estequiometria de camadas i-iii-iv para aplicações fotovoltaicas, a partir de condições de eletrólise aperfeiçoadas

Info

Publication number
BR112013009200A2
BR112013009200A2 BR112013009200A BR112013009200A BR112013009200A2 BR 112013009200 A2 BR112013009200 A2 BR 112013009200A2 BR 112013009200 A BR112013009200 A BR 112013009200A BR 112013009200 A BR112013009200 A BR 112013009200A BR 112013009200 A2 BR112013009200 A2 BR 112013009200A2
Authority
BR
Brazil
Prior art keywords
iii
photovoltaic applications
electrolysis conditions
thin layer
improved electrolysis
Prior art date
Application number
BR112013009200A
Other languages
English (en)
Inventor
Hariklia Deligianni
Lubomyr T Romankiw
Philippe De Gasquet
Pierre-Philippe Grand
Qiang Huang
Raman Vaidyanathan
Salvador Jaime
Shafaat Ahmed
Original Assignee
Nexcis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nexcis filed Critical Nexcis
Publication of BR112013009200A2 publication Critical patent/BR112013009200A2/pt

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0614—Strips or foils
    • C25D7/0692—Regulating the thickness of the coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

controle da estequiometria de camadas i-iii-iv para aplicações fotovoltaicas, a partir de condições de eletrólise aperfeiçoadas. a presente invenção refere-se à fabricação de um composto i-iii-vi para aplicações fotovoltaicas, sob a forma de camada fina, do tipo que compreende as seguintes etapas: a) eletro-depósito de uma estrutura de camada fina de elementos i e/ou iii sobre a superfície de um eletrodo, formando um substrato (sub); e b) incorporação de pelo menos um elemento vi na estrutura para se obter o composto i-iii-vi. no sentido da invenção, a etapa de eletro-depósito comporta um controle de espessura de camada fina a menos de 3 % de variação em uniformidade de espessura sobre toda a superfície do substrato que recebe o depósito.
BR112013009200A 2010-10-18 2011-10-10 controle da estequiometria de camadas i-iii-iv para aplicações fotovoltaicas, a partir de condições de eletrólise aperfeiçoadas BR112013009200A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1058457A FR2966282B1 (fr) 2010-10-18 2010-10-18 Controle de la stoechiometrie de couches i-iii-vi pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees.
PCT/FR2011/052363 WO2012052657A2 (fr) 2010-10-18 2011-10-10 Contrôle de la stoechiométrie de couches i-iii-vi pour des applications photovoltaïques à partir de conditions d'électrolyse perfectionnées.

Publications (1)

Publication Number Publication Date
BR112013009200A2 true BR112013009200A2 (pt) 2016-07-26

Family

ID=43770474

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013009200A BR112013009200A2 (pt) 2010-10-18 2011-10-10 controle da estequiometria de camadas i-iii-iv para aplicações fotovoltaicas, a partir de condições de eletrólise aperfeiçoadas

Country Status (12)

Country Link
US (1) US9647151B2 (pt)
EP (1) EP2630664B1 (pt)
JP (1) JP5875591B2 (pt)
KR (1) KR20140041384A (pt)
CN (1) CN103250258B (pt)
AU (1) AU2011317410B2 (pt)
BR (1) BR112013009200A2 (pt)
ES (1) ES2565195T3 (pt)
FR (1) FR2966282B1 (pt)
MA (1) MA34611B1 (pt)
WO (1) WO2012052657A2 (pt)
ZA (1) ZA201302725B (pt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110904483B (zh) * 2019-11-29 2021-03-16 武汉钢铁有限公司 一种垂直重力法电镀锌阳极箱调整工具及调整方法
CN114855244A (zh) * 2021-02-04 2022-08-05 盛美半导体设备(上海)股份有限公司 电镀装置及电镀方法

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* Cited by examiner, † Cited by third party
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US3477051A (en) 1967-12-26 1969-11-04 Ibm Die casting of core windings
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
JPS61237476A (ja) * 1985-04-12 1986-10-22 シーメンス・ソラー・インダストリエス・リミテッド・パートナーシップ 化合物半導体の製造方法
US5312532A (en) * 1993-01-15 1994-05-17 International Business Machines Corporation Multi-compartment eletroplating system
JPH0754189A (ja) * 1993-08-12 1995-02-28 Matsushita Electric Ind Co Ltd 電気メッキ装置
JP2920903B2 (ja) * 1994-03-16 1999-07-19 矢崎総業株式会社 薄膜太陽電池の製造方法
US5516412A (en) * 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
FR2839201B1 (fr) * 2002-04-29 2005-04-01 Electricite De France Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques
US6955747B2 (en) 2002-09-23 2005-10-18 International Business Machines Corporation Cam driven paddle assembly for a plating cell
FR2849532B1 (fr) 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
WO2004110698A2 (en) 2003-06-06 2004-12-23 Semitool, Inc. Methods and systems for processing microfeature workpieces with flow agitators and/or multiple electrodes
US7390382B2 (en) * 2003-07-01 2008-06-24 Semitool, Inc. Reactors having multiple electrodes and/or enclosed reciprocating paddles, and associated methods
FR2886460B1 (fr) 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
US20070093006A1 (en) * 2005-10-24 2007-04-26 Basol Bulent M Technique For Preparing Precursor Films And Compound Layers For Thin Film Solar Cell Fabrication And Apparatus Corresponding Thereto
US20070227633A1 (en) * 2006-04-04 2007-10-04 Basol Bulent M Composition control for roll-to-roll processed photovoltaic films
CN101851742B (zh) * 2009-03-31 2012-07-04 比亚迪股份有限公司 一种化合物半导体薄膜的制备方法

Also Published As

Publication number Publication date
AU2011317410A1 (en) 2013-05-09
CN103250258B (zh) 2016-06-29
EP2630664A2 (fr) 2013-08-28
FR2966282B1 (fr) 2013-02-15
JP2013540367A (ja) 2013-10-31
US9647151B2 (en) 2017-05-09
MA34611B1 (fr) 2013-10-02
WO2012052657A2 (fr) 2012-04-26
ZA201302725B (en) 2014-06-25
ES2565195T3 (es) 2016-04-01
EP2630664B1 (fr) 2015-12-30
FR2966282A1 (fr) 2012-04-20
WO2012052657A3 (fr) 2012-08-30
KR20140041384A (ko) 2014-04-04
CN103250258A (zh) 2013-08-14
AU2011317410B2 (en) 2015-07-16
US20130206233A1 (en) 2013-08-15
JP5875591B2 (ja) 2016-03-02

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B08F Application fees: application dismissed [chapter 8.6 patent gazette]

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B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

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B350 Update of information on the portal [chapter 15.35 patent gazette]