BE878753A - Nouveau transistor a effet de champ mos - Google Patents

Nouveau transistor a effet de champ mos

Info

Publication number
BE878753A
BE878753A BE0/197122A BE197122A BE878753A BE 878753 A BE878753 A BE 878753A BE 0/197122 A BE0/197122 A BE 0/197122A BE 197122 A BE197122 A BE 197122A BE 878753 A BE878753 A BE 878753A
Authority
BE
Belgium
Prior art keywords
field effect
effect transistor
mos field
new mos
new
Prior art date
Application number
BE0/197122A
Other languages
English (en)
Inventor
M Hanes
E Schlegel
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE878753A publication Critical patent/BE878753A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
BE0/197122A 1978-09-15 1979-09-12 Nouveau transistor a effet de champ mos BE878753A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/942,580 US4206469A (en) 1978-09-15 1978-09-15 Power metal-oxide-semiconductor-field-effect-transistor

Publications (1)

Publication Number Publication Date
BE878753A true BE878753A (fr) 1980-03-12

Family

ID=25478305

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/197122A BE878753A (fr) 1978-09-15 1979-09-12 Nouveau transistor a effet de champ mos

Country Status (9)

Country Link
US (1) US4206469A (fr)
JP (1) JPS5555570A (fr)
BE (1) BE878753A (fr)
BR (1) BR7905850A (fr)
CA (1) CA1121516A (fr)
DE (1) DE2937261A1 (fr)
FR (1) FR2436504A1 (fr)
GB (1) GB2031226A (fr)
IN (2) IN151120B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
WO1982002981A1 (fr) * 1981-02-23 1982-09-02 Inc Motorola Transistor de puissance mos
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4866492A (en) * 1986-02-28 1989-09-12 Polyfet Rf Devices, Inc. Low loss fet
JPH0758782B2 (ja) * 1986-03-19 1995-06-21 株式会社東芝 半導体装置
JPH0354868A (ja) * 1989-07-21 1991-03-08 Fuji Electric Co Ltd Ｍｏｓ型半導体装置
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
US5637922A (en) * 1994-02-07 1997-06-10 General Electric Company Wireless radio frequency power semiconductor devices using high density interconnect
EP0772242B1 (fr) 1995-10-30 2006-04-05 STMicroelectronics S.r.l. Dispositif de puissance en technologie MOS avec une seule dimension critique
EP0772241B1 (fr) 1995-10-30 2004-06-09 STMicroelectronics S.r.l. Dispositif de puissance à haute densité en technologie MOS
DE69839439D1 (de) * 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
JP2001015526A (ja) * 1999-06-28 2001-01-19 Nec Kansai Ltd 電界効果トランジスタ
JP4845293B2 (ja) * 2000-08-30 2011-12-28 新電元工業株式会社 電界効果トランジスタ
WO2012147287A1 (fr) * 2011-04-25 2012-11-01 ルネサスエレクトロニクス株式会社 Dispositif à semi-conducteur et procédé de fabrication d'un dispositif à semi-conducteur

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL152708B (nl) * 1967-02-28 1977-03-15 Philips Nv Halfgeleiderinrichting met een veldeffecttransistor met geisoleerde poortelektrode.
US3515405A (en) * 1968-02-02 1970-06-02 Westinghouse Electric Corp Axle suspension system for transit vehicles
US3851379A (en) * 1973-05-16 1974-12-03 Westinghouse Electric Corp Solid state components
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4129879A (en) * 1977-04-21 1978-12-12 General Electric Company Vertical field effect transistor
JPS545674A (en) * 1977-06-15 1979-01-17 Sony Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5555570A (en) 1980-04-23
US4206469A (en) 1980-06-03
DE2937261A1 (de) 1980-03-27
FR2436504B1 (fr) 1982-11-12
BR7905850A (pt) 1980-05-27
CA1121516A (fr) 1982-04-06
IN152227B (fr) 1983-11-26
FR2436504A1 (fr) 1980-04-11
IN151120B (fr) 1983-02-26
GB2031226A (en) 1980-04-16

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