BE846213A - Procede de fabrication de corps creux en silicium - Google Patents

Procede de fabrication de corps creux en silicium

Info

Publication number
BE846213A
BE846213A BE170639A BE170639A BE846213A BE 846213 A BE846213 A BE 846213A BE 170639 A BE170639 A BE 170639A BE 170639 A BE170639 A BE 170639A BE 846213 A BE846213 A BE 846213A
Authority
BE
Belgium
Prior art keywords
hollow bodies
manufacturing silicon
silicon hollow
manufacturing
bodies
Prior art date
Application number
BE170639A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE846213A publication Critical patent/BE846213A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE170639A 1975-09-16 1976-09-15 Procede de fabrication de corps creux en silicium BE846213A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2541215A DE2541215C3 (de) 1975-09-16 1975-09-16 Verfahren zur Herstellung von Siliciumhohlkörpern

Publications (1)

Publication Number Publication Date
BE846213A true BE846213A (fr) 1977-03-15

Family

ID=5956586

Family Applications (1)

Application Number Title Priority Date Filing Date
BE170639A BE846213A (fr) 1975-09-16 1976-09-15 Procede de fabrication de corps creux en silicium

Country Status (7)

Country Link
US (1) US4062714A (xx)
JP (1) JPS5237523A (xx)
BE (1) BE846213A (xx)
DE (1) DE2541215C3 (xx)
DK (1) DK372976A (xx)
IT (1) IT1078737B (xx)
NL (1) NL7608328A (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2065724A1 (en) * 1991-05-01 1992-11-02 Thomas R. Anthony Method of producing articles by chemical vapor deposition and the support mandrels used therein
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
MY156940A (en) * 2008-03-26 2016-04-15 Gt Solar Inc System and methods for distributing gas in a chemical vapor deposition reactor
AU2009236679B2 (en) 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
RU2388690C2 (ru) * 2008-05-22 2010-05-10 Общество с ограниченной ответственностью "Группа СТР" Способ получения поликристаллического кремния
RU2011102451A (ru) * 2008-06-23 2012-07-27 ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) Точки соединения держателя и перемычки для трубчатых нитей накала в реакторе для химического осаждения из газовой фазы
US8840723B2 (en) * 2009-03-10 2014-09-23 Mitsubishi Materials Corporation Manufacturing apparatus of polycrystalline silicon
CN103160926A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种采用空心硅芯生长多晶硅的方法
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
CN105502407A (zh) * 2016-02-04 2016-04-20 洛阳金诺机械工程有限公司 一种多晶硅生产中使用的硅芯及其硅芯组件
WO2019136261A1 (en) * 2018-01-04 2019-07-11 Ih Ip Holdings Limited Gas phase co-deposition of hydrogen/deuterium loaded metallic structures

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2409958A (en) * 1943-04-16 1946-10-22 Polaroid Corp Method of molding prisms
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
NL256017A (xx) * 1959-09-23 1900-01-01
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3966885A (en) * 1968-08-29 1976-06-29 National Research Development Corporation Methods and materials for joining silicon powder structures
US3950479A (en) * 1969-04-02 1976-04-13 Siemens Aktiengesellschaft Method of producing hollow semiconductor bodies
DE1917016B2 (de) * 1969-04-02 1972-01-05 Siemens AG, 1000 Berlin u. 8000 München Verfahren zur herstellung von hohlkoerpern aus halbleiter material
DE1943359A1 (de) * 1969-08-26 1971-03-04 Siemens Ag Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial

Also Published As

Publication number Publication date
DE2541215B2 (de) 1977-12-08
DE2541215C3 (de) 1978-08-03
DK372976A (da) 1977-03-17
IT1078737B (it) 1985-05-08
DE2541215A1 (de) 1977-03-17
US4062714A (en) 1977-12-13
JPS5237523A (en) 1977-03-23
NL7608328A (nl) 1977-03-18

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