BE837370A - Procede de preparation de monocristaux de silicium dopes par activation avec des neutrons - Google Patents

Procede de preparation de monocristaux de silicium dopes par activation avec des neutrons

Info

Publication number
BE837370A
BE837370A BE163361A BE163361A BE837370A BE 837370 A BE837370 A BE 837370A BE 163361 A BE163361 A BE 163361A BE 163361 A BE163361 A BE 163361A BE 837370 A BE837370 A BE 837370A
Authority
BE
Belgium
Prior art keywords
neutrons
activation
silicon single
doped silicon
single crystals
Prior art date
Application number
BE163361A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752516514 external-priority patent/DE2516514C3/de
Application filed filed Critical
Publication of BE837370A publication Critical patent/BE837370A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE163361A 1975-04-15 1976-01-07 Procede de preparation de monocristaux de silicium dopes par activation avec des neutrons BE837370A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752516514 DE2516514C3 (de) 1975-04-15 Verfahren zum Herstellen von durch Neutronenaktivierung dotierten SiIiciumeinkristallen

Publications (1)

Publication Number Publication Date
BE837370A true BE837370A (fr) 1976-05-03

Family

ID=5944002

Family Applications (1)

Application Number Title Priority Date Filing Date
BE163361A BE837370A (fr) 1975-04-15 1976-01-07 Procede de preparation de monocristaux de silicium dopes par activation avec des neutrons

Country Status (4)

Country Link
JP (1) JPS51124376A (enExample)
BE (1) BE837370A (enExample)
DK (1) DK104576A (enExample)
IT (1) IT1059075B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148312U (enExample) * 1986-03-13 1987-09-19
JP5879806B2 (ja) * 2011-08-09 2016-03-08 富士電機株式会社 Ｎｔｄ半導体基板へのレーザー印字方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438056B2 (enExample) * 1971-09-28 1979-11-19
NL7304259A (enExample) * 1972-03-28 1973-10-02

Also Published As

Publication number Publication date
DK104576A (da) 1976-10-16
DE2516514B2 (de) 1977-05-05
DE2516514A1 (de) 1976-10-21
IT1059075B (it) 1982-05-31
JPS5549764B2 (enExample) 1980-12-13
JPS51124376A (en) 1976-10-29

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19860131