BE832491A - Halfgeleiderinrichting - Google Patents

Halfgeleiderinrichting

Info

Publication number
BE832491A
BE832491A BE7000690A BE7000690A BE832491A BE 832491 A BE832491 A BE 832491A BE 7000690 A BE7000690 A BE 7000690A BE 7000690 A BE7000690 A BE 7000690A BE 832491 A BE832491 A BE 832491A
Authority
BE
Belgium
Prior art keywords
semi
guide device
guide
Prior art date
Application number
BE7000690A
Other languages
English (en)
Dutch (nl)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE832491A publication Critical patent/BE832491A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004Base region of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0664Vertical bipolar transistor in combination with diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
BE7000690A 1974-08-19 1975-08-14 Halfgeleiderinrichting BE832491A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49877474A 1974-08-19 1974-08-19

Publications (1)

Publication Number Publication Date
BE832491A true BE832491A (nl) 1975-12-01

Family

ID=23982440

Family Applications (1)

Application Number Title Priority Date Filing Date
BE7000690A BE832491A (nl) 1974-08-19 1975-08-14 Halfgeleiderinrichting

Country Status (9)

Country Link
JP (1) JPS5145984A (xx)
AU (1) AU8392475A (xx)
BE (1) BE832491A (xx)
DE (1) DE2535864A1 (xx)
FR (1) FR2282721A1 (xx)
GB (1) GB1502122A (xx)
IN (1) IN141922B (xx)
NL (1) NL7509804A (xx)
SE (1) SE7509023L (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
FR2458146A1 (fr) * 1979-05-29 1980-12-26 Thomson Csf Structure integree comportant un transistor et trois diodes antisaturation
FR2458904A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Circuit integre monolithique equivalent a un transistor associe a trois diodes anti-saturation
JPS62214660A (ja) * 1986-03-17 1987-09-21 Toshiba Corp 半導体装置
JPH0531725Y2 (xx) * 1987-10-28 1993-08-16
FR2677171B1 (fr) * 1991-05-31 1994-01-28 Sgs Thomson Microelectronics Sa Transistor de gain en courant predetermine dans un circuit integre bipolaire.
EP0632502B1 (en) * 1993-06-28 1999-03-17 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Bipolar power transistor with high collector breakdown voltage and related manufacturing process
US6566217B1 (en) 1996-01-16 2003-05-20 Mitsubishi Denki Kabushiki Kaisha Manufacturing process for semiconductor device
KR100256169B1 (ko) * 1996-01-16 2000-05-15 다니구찌 이찌로오, 기타오카 다카시 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
GB1502122A (en) 1978-02-22
AU8392475A (en) 1977-02-17
SE7509023L (sv) 1976-02-20
IN141922B (xx) 1977-05-07
DE2535864A1 (de) 1976-03-04
NL7509804A (nl) 1976-02-23
JPS5145984A (xx) 1976-04-19
FR2282721A1 (fr) 1976-03-19

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