BE831032A - Composant a semi-conducteurs comportant un support dielectrique - Google Patents

Composant a semi-conducteurs comportant un support dielectrique

Info

Publication number
BE831032A
BE831032A BE158012A BE158012A BE831032A BE 831032 A BE831032 A BE 831032A BE 158012 A BE158012 A BE 158012A BE 158012 A BE158012 A BE 158012A BE 831032 A BE831032 A BE 831032A
Authority
BE
Belgium
Prior art keywords
semiconductor component
component containing
dielectric support
dielectric
support
Prior art date
Application number
BE158012A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE831032A publication Critical patent/BE831032A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE158012A 1974-07-04 1975-07-04 Composant a semi-conducteurs comportant un support dielectrique BE831032A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2432544A DE2432544C3 (de) 1974-07-04 1974-07-04 Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
BE831032A true BE831032A (fr) 1975-11-03

Family

ID=5919888

Family Applications (1)

Application Number Title Priority Date Filing Date
BE158012A BE831032A (fr) 1974-07-04 1975-07-04 Composant a semi-conducteurs comportant un support dielectrique

Country Status (8)

Country Link
US (1) US4072982A (nl)
JP (1) JPS5130486A (nl)
BE (1) BE831032A (nl)
DE (1) DE2432544C3 (nl)
FR (1) FR2277434A1 (nl)
GB (1) GB1467754A (nl)
IT (1) IT1039441B (nl)
NL (1) NL7507891A (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4204218A (en) * 1978-03-01 1980-05-20 Bell Telephone Laboratories, Incorporated Support structure for thin semiconductor wafer
DE2929339A1 (de) * 1978-07-24 1980-02-14 Citizen Watch Co Ltd Halbleiteranordnung
JPS5531801A (en) * 1978-08-25 1980-03-06 Mitsubishi Petrochem Co Ltd Pigment-containing polyolefin composition
US4546374A (en) * 1981-03-23 1985-10-08 Motorola Inc. Semiconductor device including plateless package
JPS57181146A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
US4587719A (en) * 1983-08-01 1986-05-13 The Board Of Trustees Of The Leland Stanford Junior University Method of fabrication of long arrays using a short substrate
US4754912A (en) * 1984-04-05 1988-07-05 National Semiconductor Corporation Controlled collapse thermocompression gang bonding
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates
DE3539402A1 (de) * 1985-11-07 1987-05-21 Rohde & Schwarz Leistungsmesssensor zum messen von hochfrequenzleistung
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
WO1993011561A1 (de) * 1991-11-29 1993-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum herstellen einer integrierten leistungsschaltung mit einem vertikalen leistungsbauelement
GB9305448D0 (en) * 1993-03-17 1993-05-05 British Tech Group Semiconductor structure and method of manufacturing same
KR100223832B1 (ko) * 1996-12-27 1999-10-15 구본준 반도체 소자 및 그 제조방법
EP1084511A1 (en) * 1998-05-08 2001-03-21 Infineon Technologies AG Substrate and method for manufacturing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493820A (en) * 1966-12-01 1970-02-03 Raytheon Co Airgap isolated semiconductor device
NL6706735A (nl) * 1967-05-13 1968-11-14
US3617816A (en) * 1970-02-02 1971-11-02 Ibm Composite metallurgy stripe for semiconductor devices
US3710205A (en) * 1971-04-09 1973-01-09 Westinghouse Electric Corp Electronic components having improved ionic stability
JPS4835778A (nl) * 1971-09-09 1973-05-26
US3868724A (en) * 1973-11-21 1975-02-25 Fairchild Camera Instr Co Multi-layer connecting structures for packaging semiconductor devices mounted on a flexible carrier

Also Published As

Publication number Publication date
US4072982A (en) 1978-02-07
FR2277434A1 (fr) 1976-01-30
DE2432544A1 (de) 1976-01-22
GB1467754A (en) 1977-03-23
JPS5130486A (en) 1976-03-15
DE2432544B2 (de) 1978-04-06
IT1039441B (it) 1979-12-10
DE2432544C3 (de) 1978-11-23
NL7507891A (nl) 1976-01-06

Similar Documents

Publication Publication Date Title
AT341016B (de) Flussigkristallines dielektrikum
IT1039025B (it) Wafer dielettrico perfezionato
FR2309981A1 (fr) Dispositif semi-conducteur comportant une heterojonction
JPS54122985A (en) Semiconductor
IT1034720B (it) Dispositivo semiconduttore
IT1034203B (it) Dispositivo per il caricamento
SE401590B (sv) Anordning for forhindrande av sjelvsvengning
BE831032A (fr) Composant a semi-conducteurs comportant un support dielectrique
FI56806B (fi) Sammanhaengande bana av kuvert
IT1044592B (it) Dispositivo semiconduttor
SE402034B (sv) Holje for en halvledarkomponent
IT1033295B (it) Procedimento per fabbricare un dispositivo a semiconduttori
SE417556B (sv) Anordning for granskning av reaktorkerl
IT1037228B (it) Dispositivo semiconduttore
FR2279224A1 (fr) Composant semi-conducteur de commutation a couches multiples
FR2307377A1 (fr) Composant semi-conducteur
AU8392475A (en) Semiconductor devices
FR2290039A1 (fr) Composant semi-conducteur
IT1036425B (it) Montatura per semiconduttore
SE7505941L (sv) Halvledaranordning
SE403870B (sv) Halvledaranordning
BE817065A (fr) Composant semi-conducteur
BE818937A (fr) Circuit comportant un transistor
IT1034715B (it) Dispositivo semiconduttore
FR2282166A1 (fr) Composant a semiconducteurs