BE821877A - Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication - Google Patents

Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Info

Publication number
BE821877A
BE821877A BE150231A BE150231A BE821877A BE 821877 A BE821877 A BE 821877A BE 150231 A BE150231 A BE 150231A BE 150231 A BE150231 A BE 150231A BE 821877 A BE821877 A BE 821877A
Authority
BE
Belgium
Prior art keywords
manufacturing process
threshold voltage
zener diodes
electrical noise
reduced electrical
Prior art date
Application number
BE150231A
Other languages
English (en)
French (fr)
Inventor
G Dumas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE821877A publication Critical patent/BE821877A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602In-situ cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE150231A 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication BE821877A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342381A FR2252652B1 (https=) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
BE821877A true BE821877A (fr) 1975-05-05

Family

ID=9128391

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150231A BE821877A (fr) 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Country Status (5)

Country Link
BE (1) BE821877A (https=)
DE (1) DE2456129A1 (https=)
FR (1) FR2252652B1 (https=)
GB (1) GB1494905A (https=)
IT (1) IT1025714B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (de) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und anordnung zur beschichtung eines substrates
JP4129106B2 (ja) 1999-10-27 2008-08-06 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
GB1494905A (en) 1977-12-14
DE2456129A1 (de) 1975-06-05
IT1025714B (it) 1978-08-30
FR2252652B1 (https=) 1977-06-10
FR2252652A1 (https=) 1975-06-20

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