BE821877A - Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication - Google Patents

Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Info

Publication number
BE821877A
BE821877A BE150231A BE150231A BE821877A BE 821877 A BE821877 A BE 821877A BE 150231 A BE150231 A BE 150231A BE 150231 A BE150231 A BE 150231A BE 821877 A BE821877 A BE 821877A
Authority
BE
Belgium
Prior art keywords
manufacturing process
threshold voltage
zener diodes
electrical noise
reduced electrical
Prior art date
Application number
BE150231A
Other languages
English (en)
French (fr)
Inventor
G Dumas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE821877A publication Critical patent/BE821877A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE150231A 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication BE821877A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342381A FR2252652B1 (enrdf_load_stackoverflow) 1973-11-28 1973-11-28

Publications (1)

Publication Number Publication Date
BE821877A true BE821877A (fr) 1975-05-05

Family

ID=9128391

Family Applications (1)

Application Number Title Priority Date Filing Date
BE150231A BE821877A (fr) 1973-11-28 1974-11-05 Nouvelles diodes zener a tension de seuil amelioree et a bruitselectriques reduits et procede de fabrication

Country Status (5)

Country Link
BE (1) BE821877A (enrdf_load_stackoverflow)
DE (1) DE2456129A1 (enrdf_load_stackoverflow)
FR (1) FR2252652B1 (enrdf_load_stackoverflow)
GB (1) GB1494905A (enrdf_load_stackoverflow)
IT (1) IT1025714B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310044A1 (de) * 1983-03-19 1984-09-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und anordnung zur beschichtung eines substrates
JP4129106B2 (ja) 1999-10-27 2008-08-06 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
FR2252652B1 (enrdf_load_stackoverflow) 1977-06-10
DE2456129A1 (de) 1975-06-05
FR2252652A1 (enrdf_load_stackoverflow) 1975-06-20
GB1494905A (en) 1977-12-14
IT1025714B (it) 1978-08-30

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