BE805346A - Procede pour fabriquer des resistances de charge de valeur ohmique elevee et des transistors mos a faible tension de seuil - Google Patents

Procede pour fabriquer des resistances de charge de valeur ohmique elevee et des transistors mos a faible tension de seuil

Info

Publication number
BE805346A
BE805346A BE136071A BE136071A BE805346A BE 805346 A BE805346 A BE 805346A BE 136071 A BE136071 A BE 136071A BE 136071 A BE136071 A BE 136071A BE 805346 A BE805346 A BE 805346A
Authority
BE
Belgium
Prior art keywords
mos transistors
low threshold
load resistors
manufacturing high
ohmic value
Prior art date
Application number
BE136071A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722247183 external-priority patent/DE2247183C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE805346A publication Critical patent/BE805346A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
BE136071A 1972-09-26 1973-09-26 Procede pour fabriquer des resistances de charge de valeur ohmique elevee et des transistors mos a faible tension de seuil BE805346A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722247183 DE2247183C3 (de) 1972-09-26 Verfahren zur Herstellung von Schaltungen mit wenigstens einem Feldeffekttransistor mit einer Source-, einer Drain- und einer Gateelektrode und mit mindestens einem ohmschen > Schichtwiderstand auf einem gemeinsamen Substrat

Publications (1)

Publication Number Publication Date
BE805346A true BE805346A (fr) 1974-01-16

Family

ID=5857423

Family Applications (1)

Application Number Title Priority Date Filing Date
BE136071A BE805346A (fr) 1972-09-26 1973-09-26 Procede pour fabriquer des resistances de charge de valeur ohmique elevee et des transistors mos a faible tension de seuil

Country Status (11)

Country Link
US (1) US3889358A (ja)
JP (1) JPS4973086A (ja)
BE (1) BE805346A (ja)
CA (1) CA1004373A (ja)
CH (1) CH560463A5 (ja)
FR (1) FR2200624B1 (ja)
GB (1) GB1447236A (ja)
IT (1) IT993410B (ja)
LU (1) LU68478A1 (ja)
NL (1) NL7313070A (ja)
SE (1) SE390085B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138990A (en) * 1974-09-30 1976-03-31 Suwa Seikosha Kk Handotaisochino seizohoho
JPS51103780A (ja) * 1975-03-10 1976-09-13 Tokyo Shibaura Electric Co Handotaisoshi
JPS5267532A (en) * 1975-12-03 1977-06-04 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
US4212083A (en) * 1976-05-28 1980-07-08 Texas Instruments Incorporated MOS Integrated with implanted resistor elements
US4246692A (en) * 1976-05-28 1981-01-27 Texas Instruments Incorporated MOS Integrated circuits with implanted resistor elements
US4114255A (en) * 1976-08-16 1978-09-19 Intel Corporation Floating gate storage device and method of fabrication
US4187602A (en) * 1976-12-27 1980-02-12 Texas Instruments Incorporated Static memory cell using field implanted resistance
US4228451A (en) * 1978-07-21 1980-10-14 Monolithic Memories, Inc. High resistivity semiconductor resistor device
US4210465A (en) * 1978-11-20 1980-07-01 Ncr Corporation CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
US4472875A (en) * 1983-06-27 1984-09-25 Teletype Corporation Method for manufacturing an integrated circuit device
US4485553A (en) * 1983-06-27 1984-12-04 Teletype Corporation Method for manufacturing an integrated circuit device
US4468857A (en) * 1983-06-27 1984-09-04 Teletype Corporation Method of manufacturing an integrated circuit device
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
JPS61113269A (ja) * 1984-11-08 1986-05-31 Rohm Co Ltd 半導体装置
KR940005293B1 (ko) * 1991-05-23 1994-06-15 삼성전자 주식회사 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조
JP2919379B2 (ja) * 1996-08-29 1999-07-12 九州日本電気株式会社 半導体装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6713666A (ja) * 1967-10-07 1969-04-09
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor

Also Published As

Publication number Publication date
DE2247183B2 (de) 1977-02-10
NL7313070A (ja) 1974-03-28
LU68478A1 (ja) 1973-12-07
JPS4973086A (ja) 1974-07-15
CH560463A5 (ja) 1975-03-27
GB1447236A (en) 1976-08-25
FR2200624B1 (ja) 1977-09-09
US3889358A (en) 1975-06-17
IT993410B (it) 1975-09-30
SE390085B (sv) 1976-11-29
DE2247183A1 (de) 1974-04-25
FR2200624A1 (ja) 1974-04-19
CA1004373A (en) 1977-01-25

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