BE799319A - Procede d'implatation d'ions, - Google Patents

Procede d'implatation d'ions,

Info

Publication number
BE799319A
BE799319A BE130933A BE130933A BE799319A BE 799319 A BE799319 A BE 799319A BE 130933 A BE130933 A BE 130933A BE 130933 A BE130933 A BE 130933A BE 799319 A BE799319 A BE 799319A
Authority
BE
Belgium
Prior art keywords
implatation
ions
ions implatation
implatation process
Prior art date
Application number
BE130933A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE799319A publication Critical patent/BE799319A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/961Ion beam source and generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Accelerators (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Electron Sources, Ion Sources (AREA)
BE130933A 1972-05-09 1973-05-09 Procede d'implatation d'ions, BE799319A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722222736 DE2222736A1 (de) 1972-05-09 1972-05-09 Verfahren zur ionenimplantation

Publications (1)

Publication Number Publication Date
BE799319A true BE799319A (fr) 1973-08-31

Family

ID=5844509

Family Applications (1)

Application Number Title Priority Date Filing Date
BE130933A BE799319A (fr) 1972-05-09 1973-05-09 Procede d'implatation d'ions,

Country Status (10)

Country Link
US (1) US3909305A (fi)
JP (1) JPS4962076A (fi)
BE (1) BE799319A (fi)
CA (1) CA1011228A (fi)
CH (1) CH578891A5 (fi)
DE (1) DE2222736A1 (fi)
FR (1) FR2183853B1 (fi)
IT (1) IT987106B (fi)
LU (1) LU67556A1 (fi)
NL (1) NL7306419A (fi)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179312A (en) * 1977-12-08 1979-12-18 International Business Machines Corporation Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
DE2835121A1 (de) * 1978-08-10 1980-02-14 Fraunhofer Ges Forschung Verfahren und vorrichtung zum dotieren von halbleitern mittels ionenimplantation
WO1982004351A1 (en) * 1981-05-26 1982-12-09 Aircraft Co Hughes Focused ion beam microfabrication column
EP0221897A1 (en) * 1985-05-17 1987-05-20 J.C. Schumacher Company Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source
US4721683A (en) * 1987-05-21 1988-01-26 American Cyanamid Company Use of alkylphosphines and alkylarsines in ion implantation
DE69026751T2 (de) * 1989-05-17 1996-11-14 Kobe Steel Ltd Ionenbündelfokussierungsvorrichtung
JP2863962B2 (ja) * 1992-04-10 1999-03-03 株式会社日立製作所 イオン打ち込み装置
US5837568A (en) * 1995-12-12 1998-11-17 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor devices
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US7361915B2 (en) * 2005-11-30 2008-04-22 Axcelis Technologies, Inc. Beam current stabilization utilizing gas feed control loop

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3558376A (en) * 1966-01-07 1971-01-26 Siemens Ag Method for controlled doping by gas of foreign substance into semiconductor materials
US3442725A (en) * 1966-05-05 1969-05-06 Motorola Inc Phosphorus diffusion system
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3737346A (en) * 1971-07-01 1973-06-05 Bell Telephone Labor Inc Semiconductor device fabrication using combination of energy beams for masking and impurity doping

Also Published As

Publication number Publication date
LU67556A1 (fi) 1973-07-13
CH578891A5 (fi) 1976-08-31
JPS4962076A (fi) 1974-06-15
FR2183853A1 (fi) 1973-12-21
IT987106B (it) 1975-02-20
NL7306419A (fi) 1973-11-13
CA1011228A (en) 1977-05-31
FR2183853B1 (fi) 1977-02-11
US3909305A (en) 1975-09-30
DE2222736A1 (de) 1973-11-22

Similar Documents

Publication Publication Date Title
CH552610A (fr) Procede de preparation d'azapurinones.
FR2294152A1 (fr) Procede de production d'isoprene
BE801313A (fr) Procede de purification de dioxolane-1,3
BE807429A (fr) Procede de preparation de l'ethylbenzene
BE804942A (fr) Procede de preparation de cyclohexane-diones (1,3)
BE808733A (fr) Procede de preparation de cyclohexane-diones-1,3
BE799319A (fr) Procede d'implatation d'ions,
BE796813A (fr) Procede de preparation de perfluoroalkylesters
BE796835A (fr) Procede d'extraction de metaux
BE804236A (fr) Procede d'extraction de polylactames
BE804533A (fr) Procede d'extraction de houblon
BE800855A (fr) Procede d'electrodeposition
BE791904A (fr) Procede de deshydrochloration
BE808323A (fr) Procede d'isolement
BE800402A (fr) Procede d'echange d'ions
BE796279A (fr) Procede de preparation de nouvelles 2,6-diamino-dihydropyridines
BE793327A (fr) Procede d'encapsulation
BE794066A (fr) Procede de preparation de 2-mercapto-benzimidazol
BE796510A (fr) Procede de preparation d'azines
BE794960A (fr) Procede de revetement
BE799198A (fr) Procede de preparation d'amindazetidinones,
BE795270A (fr) Procede d'extraction de metaux
BE760506A (fr) Procede de chloration d'halogenoethanes,
BE806254A (fr) Procede d'extraction
BE807081A (fr) Procede d'extraction