BE798824A - Systeme de determination de faibles differences de luminosite dans l'image televisee d'un dispositif de fusion par zones d'un semi-conducteur - Google Patents

Systeme de determination de faibles differences de luminosite dans l'image televisee d'un dispositif de fusion par zones d'un semi-conducteur

Info

Publication number
BE798824A
BE798824A BE130502A BE130502A BE798824A BE 798824 A BE798824 A BE 798824A BE 130502 A BE130502 A BE 130502A BE 130502 A BE130502 A BE 130502A BE 798824 A BE798824 A BE 798824A
Authority
BE
Belgium
Prior art keywords
luminosity
zones
semiconductor
fusion device
television image
Prior art date
Application number
BE130502A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE798824A publication Critical patent/BE798824A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/022—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by means of tv-camera scanning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
BE130502A 1972-04-27 1973-04-27 Systeme de determination de faibles differences de luminosite dans l'image televisee d'un dispositif de fusion par zones d'un semi-conducteur BE798824A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2220819A DE2220819B2 (de) 1972-04-27 1972-04-27 Vorrichtung zur Steuerung des Durchmessers eines Halbleiterstabes an der Erstarrungsfront der Schmelzzone beim tiegellosen Zonenschmelzen

Publications (1)

Publication Number Publication Date
BE798824A true BE798824A (fr) 1973-10-29

Family

ID=5843514

Family Applications (1)

Application Number Title Priority Date Filing Date
BE130502A BE798824A (fr) 1972-04-27 1973-04-27 Systeme de determination de faibles differences de luminosite dans l'image televisee d'un dispositif de fusion par zones d'un semi-conducteur

Country Status (5)

Country Link
US (1) US3816650A (xx)
JP (1) JPS567998B2 (xx)
BE (1) BE798824A (xx)
DE (1) DE2220819B2 (xx)
NL (1) NL7300238A (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2516756A1 (de) * 1975-04-16 1976-10-28 Betr Forsch Inst Angew Forsch Verfahren und vorrichtung zur bestimmung einer flaechenabmessung in einer ebene
DE2846500C2 (de) * 1977-10-31 1984-12-06 Institut problem upravlenija, Moskau/Moskva Steuerungsverfahren für eine bewegliche Energiequelle beim Erhitzen der Oberfläche eines Objekts und Einrichtung zur Durchführung dieses Verfahrens
JPS60112687A (ja) * 1983-11-21 1985-06-19 Nichiden Mach Ltd 単結晶製造方法及び装置
JP2613372B2 (ja) * 1986-03-05 1997-05-28 松下電器産業株式会社 電磁型電気・音響変換器

Also Published As

Publication number Publication date
DE2220819B2 (de) 1978-09-28
NL7300238A (xx) 1973-10-30
US3816650A (en) 1974-06-11
DE2220819A1 (de) 1973-11-08
DE2220819C3 (xx) 1979-05-23
JPS567998B2 (xx) 1981-02-20
JPS4954278A (xx) 1974-05-27

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: SIEMENS A.G.

Effective date: 19850427