BE787811A - Dispositif semiconducteur insensible a la fatigue thermique - Google Patents

Dispositif semiconducteur insensible a la fatigue thermique

Info

Publication number
BE787811A
BE787811A BE787811A BE787811A BE787811A BE 787811 A BE787811 A BE 787811A BE 787811 A BE787811 A BE 787811A BE 787811 A BE787811 A BE 787811A BE 787811 A BE787811 A BE 787811A
Authority
BE
Belgium
Prior art keywords
semiconductor device
thermal fatigue
device insensitive
insensitive
fatigue
Prior art date
Application number
BE787811A
Other languages
English (en)
French (fr)
Inventor
A E Roswell
G K Clymer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE787811A publication Critical patent/BE787811A/xx

Links

Classifications

    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
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    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
BE787811A 1971-08-26 1972-08-21 Dispositif semiconducteur insensible a la fatigue thermique BE787811A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17519671A 1971-08-26 1971-08-26

Publications (1)

Publication Number Publication Date
BE787811A true BE787811A (fr) 1972-12-18

Family

ID=22639336

Family Applications (1)

Application Number Title Priority Date Filing Date
BE787811A BE787811A (fr) 1971-08-26 1972-08-21 Dispositif semiconducteur insensible a la fatigue thermique

Country Status (11)

Country Link
US (1) US3735208A (de)
JP (1) JPS4831056A (de)
AU (1) AU463308B2 (de)
BE (1) BE787811A (de)
CA (1) CA967291A (de)
DE (1) DE2240468A1 (de)
FR (1) FR2150488B1 (de)
GB (1) GB1341648A (de)
IT (1) IT963530B (de)
MY (1) MY7400320A (de)
NL (1) NL7211633A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5187736A (de) * 1975-01-31 1976-07-31 Hitachi Ltd
GB2132413A (en) * 1982-12-24 1984-07-04 Plessey Co Plc Microwave device package
US4486511A (en) * 1983-06-27 1984-12-04 National Semiconductor Corporation Solder composition for thin coatings
CH662007A5 (en) * 1983-12-21 1987-08-31 Bbc Brown Boveri & Cie Method of soldering semiconductor components
JPS60234346A (ja) * 1984-05-07 1985-11-21 Nec Corp 半導体装置
US6583673B2 (en) * 2001-02-26 2003-06-24 Infineon Technologies Ag Stability enhanced multistage power amplifier
JP6239840B2 (ja) * 2013-03-27 2017-11-29 ローム株式会社 半導体装置および半導体装置の製造方法
US10319654B1 (en) * 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048358B (de) * 1955-08-12 1959-01-08
US2986678A (en) * 1957-06-20 1961-05-30 Motorola Inc Semiconductor device
BE584431A (de) * 1959-02-09
GB1064290A (en) * 1963-01-14 1967-04-05 Motorola Inc Method of making semiconductor devices
GB1030540A (en) * 1964-01-02 1966-05-25 Gen Electric Improvements in and relating to semi-conductor diodes
US3331997A (en) * 1964-12-31 1967-07-18 Wagner Electric Corp Silicon diode with solder composition attaching ohmic contacts

Also Published As

Publication number Publication date
JPS4831056A (de) 1973-04-24
CA967291A (en) 1975-05-06
GB1341648A (en) 1973-12-25
NL7211633A (de) 1973-02-28
AU4573272A (en) 1974-03-07
DE2240468A1 (de) 1973-03-01
FR2150488B1 (de) 1976-01-23
MY7400320A (en) 1974-12-31
FR2150488A1 (de) 1973-04-06
AU463308B2 (en) 1975-07-24
IT963530B (it) 1974-01-21
US3735208A (en) 1973-05-22

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