BE782516A - Dispositif de commande electronique - Google Patents

Dispositif de commande electronique

Info

Publication number
BE782516A
BE782516A BE782516A BE782516A BE782516A BE 782516 A BE782516 A BE 782516A BE 782516 A BE782516 A BE 782516A BE 782516 A BE782516 A BE 782516A BE 782516 A BE782516 A BE 782516A
Authority
BE
Belgium
Prior art keywords
control device
electronic control
electronic
control
Prior art date
Application number
BE782516A
Other languages
English (en)
French (fr)
Inventor
H Fritzsche
S R Ovshinsky
R F Shaw
M Silver
P Smejtek
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of BE782516A publication Critical patent/BE782516A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/253Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
BE782516A 1971-04-30 1972-04-21 Dispositif de commande electronique BE782516A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13900471A 1971-04-30 1971-04-30
US18417971A 1971-09-27 1971-09-27

Publications (1)

Publication Number Publication Date
BE782516A true BE782516A (fr) 1972-08-16

Family

ID=26836776

Family Applications (1)

Application Number Title Priority Date Filing Date
BE782516A BE782516A (fr) 1971-04-30 1972-04-21 Dispositif de commande electronique

Country Status (13)

Country Link
US (1) US3748501A (xx)
JP (1) JPS572197B1 (xx)
AU (1) AU4160272A (xx)
BE (1) BE782516A (xx)
CA (1) CA952629A (xx)
DD (1) DD99889A5 (xx)
DE (1) DE2215467C2 (xx)
FR (1) FR2134508B1 (xx)
GB (1) GB1385227A (xx)
IL (1) IL39185A (xx)
IT (1) IT957203B (xx)
NL (1) NL7205050A (xx)
SE (1) SE371332B (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876985A (en) * 1971-04-30 1975-04-08 Energy Conversion Devices Inc Matrix of amorphous electronic control device
GB1469814A (en) * 1973-04-26 1977-04-06 Energy Conversion Devices Inc Solid state electronic device and circuit therefor
FR2581781B1 (fr) * 1985-05-07 1987-06-12 Thomson Csf Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication
EP0268370B1 (en) * 1986-10-13 1995-06-28 Canon Kabushiki Kaisha Switching device
US4839700A (en) * 1987-12-16 1989-06-13 California Institute Of Technology Solid-state non-volatile electronically programmable reversible variable resistance device
TW506549U (en) * 1999-07-22 2002-10-11 Kato Electric & Machinary Co Slanted hinge
US7227170B2 (en) * 2003-03-10 2007-06-05 Energy Conversion Devices, Inc. Multiple bit chalcogenide storage device
US7529123B2 (en) * 2003-09-08 2009-05-05 Ovonyx, Inc. Method of operating a multi-terminal electronic device
DE102004037450B4 (de) * 2004-08-02 2009-04-16 Qimonda Ag Verfahren zum Betrieb eines Schalt-Bauelements
US7821117B2 (en) * 2008-04-16 2010-10-26 Freescale Semiconductor, Inc. Semiconductor package with mechanical stress isolation of semiconductor die subassembly
US8148707B2 (en) * 2008-12-30 2012-04-03 Stmicroelectronics S.R.L. Ovonic threshold switch film composition for TSLAGS material
US10727405B2 (en) 2017-03-22 2020-07-28 Micron Technology, Inc. Chalcogenide memory device components and composition
US10163977B1 (en) * 2017-03-22 2018-12-25 Micron Technology, Inc. Chalcogenide memory device components and composition
CN112794279A (zh) * 2019-11-13 2021-05-14 中国科学院苏州纳米技术与纳米仿生研究所 人工突触器件和人工突触器件的制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3336484A (en) * 1964-04-10 1967-08-15 Energy Conversion Devices Inc Power switching circuit
NL298324A (xx) * 1962-09-28 1900-01-01
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3461296A (en) * 1964-04-10 1969-08-12 Energy Conversion Devices Inc Photoconductive bistable device
DE1464880B2 (de) * 1964-05-05 1970-11-12 Danfoss A/S, Nordborg (Dänemark) Elektronische Schaltanordnung unter Verwendung von sperrschichtfreien Halbleiter-Schaltelementen
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
GB1181345A (en) * 1967-06-01 1970-02-11 Trw Inc Thin Film Active Elements
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
JPS53539B2 (xx) * 1972-07-27 1978-01-10

Also Published As

Publication number Publication date
IL39185A (en) 1974-06-30
FR2134508B1 (xx) 1977-12-23
DE2215467A1 (de) 1972-11-30
IL39185A0 (en) 1972-06-28
US3748501A (en) 1973-07-24
DE2215467C2 (de) 1983-03-31
CA952629A (en) 1974-08-06
JPS572197B1 (xx) 1982-01-14
SE371332B (xx) 1974-11-11
IT957203B (it) 1973-10-10
NL7205050A (xx) 1972-11-01
DD99889A5 (xx) 1973-08-20
FR2134508A1 (xx) 1972-12-08
AU4160272A (en) 1974-01-24
GB1385227A (en) 1975-02-26

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