BE781228A - Procede de fabrication de couches minces par recristallisation de zone - Google Patents

Procede de fabrication de couches minces par recristallisation de zone

Info

Publication number
BE781228A
BE781228A BE781228A BE781228A BE781228A BE 781228 A BE781228 A BE 781228A BE 781228 A BE781228 A BE 781228A BE 781228 A BE781228 A BE 781228A BE 781228 A BE781228 A BE 781228A
Authority
BE
Belgium
Prior art keywords
recristallization
zone
thin layers
manufacturing thin
manufacturing
Prior art date
Application number
BE781228A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE781228A publication Critical patent/BE781228A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE781228A 1971-03-25 1972-03-24 Procede de fabrication de couches minces par recristallisation de zone BE781228A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712114593 DE2114593A1 (de) 1971-03-25 1971-03-25 Zonenrekristallisationsverfahren dünner Schichten

Publications (1)

Publication Number Publication Date
BE781228A true BE781228A (fr) 1972-07-17

Family

ID=5802779

Family Applications (1)

Application Number Title Priority Date Filing Date
BE781228A BE781228A (fr) 1971-03-25 1972-03-24 Procede de fabrication de couches minces par recristallisation de zone

Country Status (6)

Country Link
BE (1) BE781228A (enExample)
DE (1) DE2114593A1 (enExample)
FR (1) FR2130662A1 (enExample)
IT (1) IT950450B (enExample)
LU (1) LU65027A1 (enExample)
NL (1) NL7202781A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56145198A (en) * 1980-04-04 1981-11-11 Hitachi Ltd Forming method of single crystal silicon membrane and device therefor
DE3017923A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten
FR2547319B1 (fr) * 1983-06-09 1987-10-09 Gleizes Raymond Procede et appareil de fabrication de couches monocristallines et macrocristallines, notamment pour cellules photovoltaiques

Also Published As

Publication number Publication date
FR2130662A1 (en) 1972-11-03
FR2130662B1 (enExample) 1975-12-26
NL7202781A (enExample) 1972-09-27
DE2114593A1 (de) 1972-11-09
IT950450B (it) 1973-06-20
LU65027A1 (enExample) 1972-07-11

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