IT950450B - Procedimento per ricristallizzare strati sottili a zone - Google Patents

Procedimento per ricristallizzare strati sottili a zone

Info

Publication number
IT950450B
IT950450B IT2219972A IT2219972A IT950450B IT 950450 B IT950450 B IT 950450B IT 2219972 A IT2219972 A IT 2219972A IT 2219972 A IT2219972 A IT 2219972A IT 950450 B IT950450 B IT 950450B
Authority
IT
Italy
Prior art keywords
recrystallize
zones
procedure
thin layers
layers
Prior art date
Application number
IT2219972A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT950450B publication Critical patent/IT950450B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT2219972A 1971-03-25 1972-03-22 Procedimento per ricristallizzare strati sottili a zone IT950450B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712114593 DE2114593A1 (de) 1971-03-25 1971-03-25 Zonenrekristallisationsverfahren dünner Schichten

Publications (1)

Publication Number Publication Date
IT950450B true IT950450B (it) 1973-06-20

Family

ID=5802779

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2219972A IT950450B (it) 1971-03-25 1972-03-22 Procedimento per ricristallizzare strati sottili a zone

Country Status (6)

Country Link
BE (1) BE781228A (it)
DE (1) DE2114593A1 (it)
FR (1) FR2130662A1 (it)
IT (1) IT950450B (it)
LU (1) LU65027A1 (it)
NL (1) NL7202781A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56145198A (en) * 1980-04-04 1981-11-11 Hitachi Ltd Forming method of single crystal silicon membrane and device therefor
DE3017923A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
DE3126050A1 (de) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten
FR2547319B1 (fr) * 1983-06-09 1987-10-09 Gleizes Raymond Procede et appareil de fabrication de couches monocristallines et macrocristallines, notamment pour cellules photovoltaiques

Also Published As

Publication number Publication date
FR2130662A1 (en) 1972-11-03
BE781228A (fr) 1972-07-17
DE2114593A1 (de) 1972-11-09
FR2130662B1 (it) 1975-12-26
LU65027A1 (it) 1972-07-11
NL7202781A (it) 1972-09-27

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