BE753453A - Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede - Google Patents

Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede

Info

Publication number
BE753453A
BE753453A BE753453DA BE753453A BE 753453 A BE753453 A BE 753453A BE 753453D A BE753453D A BE 753453DA BE 753453 A BE753453 A BE 753453A
Authority
BE
Belgium
Prior art keywords
transistors
field effect
insulated door
complementary field
manufacturing complementary
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
L A Murray
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE753453A publication Critical patent/BE753453A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/03—Diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
BE753453D 1969-10-21 1970-07-14 Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede BE753453A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86807169A 1969-10-21 1969-10-21

Publications (1)

Publication Number Publication Date
BE753453A true BE753453A (fr) 1970-12-16

Family

ID=25351017

Family Applications (1)

Application Number Title Priority Date Filing Date
BE753453D BE753453A (fr) 1969-10-21 1970-07-14 Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede

Country Status (6)

Country Link
US (1) US3700507A (enExample)
JP (1) JPS4911034B1 (enExample)
BE (1) BE753453A (enExample)
DE (1) DE2033419A1 (enExample)
FR (1) FR2064447B1 (enExample)
GB (1) GB1265932A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870576A (en) * 1970-04-29 1975-03-11 Ilya Leonidovich Isitovsky Method of making a profiled p-n junction in a plate of semiconductive material
US3892609A (en) * 1971-10-07 1975-07-01 Hughes Aircraft Co Production of mis integrated devices with high inversion voltage to threshold voltage ratios
JPS5321989B2 (enExample) * 1973-10-12 1978-07-06
JPS5286087A (en) * 1976-01-10 1977-07-16 Toshiba Corp Manufacture of semiconductor device
US4045259A (en) * 1976-10-26 1977-08-30 Harris Corporation Process for fabricating diffused complementary field effect transistors
US4345366A (en) * 1980-10-20 1982-08-24 Ncr Corporation Self-aligned all-n+ polysilicon CMOS process
US4462151A (en) * 1982-12-03 1984-07-31 International Business Machines Corporation Method of making high density complementary transistors
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
JPH0630355B2 (ja) * 1983-05-16 1994-04-20 ソニー株式会社 半導体装置
JPH01105529A (ja) * 1987-10-19 1989-04-24 Toshiba Corp 半導体装置の製造方法
US5116778A (en) * 1990-02-05 1992-05-26 Advanced Micro Devices, Inc. Dopant sources for cmos device
US6265256B1 (en) * 1998-09-17 2001-07-24 Advanced Micro Devices, Inc. MOS transistor with minimal overlap between gate and source/drain extensions

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1448383A (fr) * 1964-09-24 1966-08-05 Ibm Procédé de fabrication d'éléments semi-conducteurs

Also Published As

Publication number Publication date
FR2064447B1 (enExample) 1976-05-28
JPS4911034B1 (enExample) 1974-03-14
US3700507A (en) 1972-10-24
DE2033419A1 (de) 1971-04-29
GB1265932A (enExample) 1972-03-08
FR2064447A1 (enExample) 1971-07-23

Similar Documents

Publication Publication Date Title
BE745398A (fr) Transistors a effet de champ a grille isolee et leur procede defabrication
BE805485A (fr) Transistors a effet de champ complementaires et leur procede de fabrication
ZA717690B (en) Insulated gate field effect memory transistor
CA1016650A (en) Logic circuit arrangement employing insulated gate field effect transistors
FR2284988A1 (fr) Transistor a effet de champ a grille isolee et procede de fabrication
HK28081A (en) Process for fabricating insulated gate field effect transistor structure
BE753453A (fr) Procede de fabrication de transistors a effet de champ et a porte isolee complementaires et transistors obtenus par ce procede
GB1348972A (en) High frequency insulated gate field effect transistor for wide frequency band operation
CA996640A (en) Flip-flop circuits utilizing insulated gate field effect transistors
CA1000809A (en) Fast insulated gate filed effect transistor circuit using multiple threshold technology
CH462327A (fr) Transistor à effet de champ à porte isolée
AU464037B2 (en) A method of manufacturing a semiconductor device having atleast one insulated gate field effect transistor, and semiconductor device manufactured by using the method
BE835288A (fr) Procede de fabrication de transistors a effet de champ perfectionnes
CA979080A (en) Logic circuit arrangement using insulated gate field effect transistors
BE818547A (fr) Dispositif semi-conducteur comportant un transistor a effet de champ a porte isolee et procede de fabrication
FR1480732A (fr) Méthode de fabrication des transistors à effet de champ et à grille isolée
FR1511963A (fr) Transistor à effet de champ à porte isolée et procédé pour sa fabrication
FR2275888A1 (fr) Structure a transistors a effet de champ complementaires a porte isolee et procede pour sa fabrication
BE761445A (fr) Procede de fabrication de telomeres et telomeres obtenus
FR1503215A (fr) Procédé de fabrication de dispositifs transducteurs et dispositifs obtenus par ce procédé
BE787004A (fr) Procede de fabrication de conducteurs chauffants et conducteurschauffants obtenus par ce procede
BE771608A (fr) Transistor a effet de champ et procede pour le former
BE767882A (fr) Transistor a effet de champ a grille isolee
BE795737A (fr) Procede pour fabriquer des transistors a effet de champ a canal
FR1491166A (fr) Transistor à effet de champ, et à porte isolée