BE752480A - SEMICONDUCTOR DEVICE INCLUDING A FIELD-EFFECT TRANSISTOR WITH INSULATED DOOR ELECTRODE - Google Patents
SEMICONDUCTOR DEVICE INCLUDING A FIELD-EFFECT TRANSISTOR WITH INSULATED DOOR ELECTRODEInfo
- Publication number
- BE752480A BE752480A BE752480DA BE752480A BE 752480 A BE752480 A BE 752480A BE 752480D A BE752480D A BE 752480DA BE 752480 A BE752480 A BE 752480A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor device
- field
- device including
- effect transistor
- insulated door
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6909788A NL165005C (en) | 1969-06-26 | 1969-06-26 | SEMICONDUCTOR DEVICE CONTAINING FIELD EFFECT TRANSISTORS WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE. |
Publications (1)
Publication Number | Publication Date |
---|---|
BE752480A true BE752480A (en) | 1970-12-24 |
Family
ID=19807307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE752480D BE752480A (en) | 1969-06-26 | 1970-06-24 | SEMICONDUCTOR DEVICE INCLUDING A FIELD-EFFECT TRANSISTOR WITH INSULATED DOOR ELECTRODE |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT336080B (en) |
BE (1) | BE752480A (en) |
CH (1) | CH514937A (en) |
DE (1) | DE2029058C2 (en) |
FR (1) | FR2047958B1 (en) |
GB (1) | GB1325332A (en) |
NL (1) | NL165005C (en) |
SE (1) | SE365905B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5528229B1 (en) * | 1971-03-19 | 1980-07-26 | ||
US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
JPS559834B2 (en) * | 1972-03-31 | 1980-03-12 | ||
JPS551189A (en) * | 1979-05-07 | 1980-01-07 | Nec Corp | Semiconductor device |
JPS55102274A (en) * | 1980-01-25 | 1980-08-05 | Agency Of Ind Science & Technol | Insulated gate field effect transistor |
GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE636316A (en) * | 1962-08-23 | 1900-01-01 | ||
US3400383A (en) * | 1964-08-05 | 1968-09-03 | Texas Instruments Inc | Trainable decision system and adaptive memory element |
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
GB1145092A (en) * | 1965-06-09 | 1969-03-12 | Mullard Ltd | Improvements in insulated gate field effect semiconductor devices |
GB1155578A (en) * | 1965-10-08 | 1969-06-18 | Sony Corp | Field Effect Transistor |
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
GB1131675A (en) * | 1966-07-11 | 1968-10-23 | Hitachi Ltd | Semiconductor device |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
GB1203298A (en) * | 1967-01-10 | 1970-08-26 | Hewlett Packard Co | Mis integrated circuit and method of fabricating the same |
-
1969
- 1969-06-26 NL NL6909788A patent/NL165005C/en not_active IP Right Cessation
-
1970
- 1970-06-12 DE DE19702029058 patent/DE2029058C2/en not_active Expired
- 1970-06-23 AT AT564470A patent/AT336080B/en active
- 1970-06-23 GB GB3046370A patent/GB1325332A/en not_active Expired
- 1970-06-23 SE SE868970A patent/SE365905B/xx unknown
- 1970-06-23 CH CH957070A patent/CH514937A/en not_active IP Right Cessation
- 1970-06-24 BE BE752480D patent/BE752480A/en not_active IP Right Cessation
- 1970-06-25 FR FR7023553A patent/FR2047958B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2047958A1 (en) | 1971-03-19 |
NL6909788A (en) | 1970-12-29 |
ATA564470A (en) | 1976-08-15 |
DE2029058C2 (en) | 1983-06-23 |
GB1325332A (en) | 1973-08-01 |
AT336080B (en) | 1977-04-12 |
DE2029058A1 (en) | 1971-01-07 |
NL165005C (en) | 1981-02-16 |
SE365905B (en) | 1974-04-01 |
FR2047958B1 (en) | 1975-09-26 |
CH514937A (en) | 1971-10-31 |
NL165005B (en) | 1980-09-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE20 | Patent expired |
Owner name: N.V. PHILIPS GLOEILAMPENFABRIEKEN Effective date: 19900624 |