BE742820A - - Google Patents

Info

Publication number
BE742820A
BE742820A BE742820DA BE742820A BE 742820 A BE742820 A BE 742820A BE 742820D A BE742820D A BE 742820DA BE 742820 A BE742820 A BE 742820A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE742820A publication Critical patent/BE742820A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83135Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different gate conductor materials or different gate conductor implants
BE742820D 1968-12-16 1969-12-08 BE742820A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78414468A 1968-12-16 1968-12-16

Publications (1)

Publication Number Publication Date
BE742820A true BE742820A (https=) 1970-05-14

Family

ID=25131479

Family Applications (1)

Application Number Title Priority Date Filing Date
BE742820D BE742820A (https=) 1968-12-16 1969-12-08

Country Status (9)

Country Link
JP (1) JPS4815390B1 (https=)
BE (1) BE742820A (https=)
BR (1) BR6914737D0 (https=)
CH (1) CH518009A (https=)
DE (1) DE1961641A1 (https=)
ES (1) ES374600A1 (https=)
FR (1) FR2026209A7 (https=)
GB (1) GB1297143A (https=)
NL (1) NL6918853A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109915A1 (de) * 1971-03-02 1972-09-07 Ibm Deutschland Oberflächengesteuerte Halbleiteranordnung
JPS549870B2 (https=) * 1972-10-04 1979-04-27
JPS5522888A (en) * 1978-09-05 1980-02-18 Tdk Corp Manufacturing method of insulation gate type semiconductor device

Also Published As

Publication number Publication date
GB1297143A (https=) 1972-11-22
FR2026209A7 (https=) 1970-09-18
CH518009A (de) 1972-01-15
NL6918853A (https=) 1970-06-18
DE1961641A1 (de) 1970-07-30
ES374600A1 (es) 1972-01-01
JPS4815390B1 (https=) 1973-05-14
BR6914737D0 (pt) 1973-01-02

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