BE711250A - - Google Patents

Info

Publication number
BE711250A
BE711250A BE711250DA BE711250A BE 711250 A BE711250 A BE 711250A BE 711250D A BE711250D A BE 711250DA BE 711250 A BE711250 A BE 711250A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE711250A publication Critical patent/BE711250A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
BE711250D 1967-02-25 1968-02-23 BE711250A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6703014A NL6703014A (ko) 1967-02-25 1967-02-25
NL676703013A NL153947B (nl) 1967-02-25 1967-02-25 Werkwijze voor het vervaardigen van halfgeleiderinrichtingen, waarbij een selectief elektrolytisch etsproces wordt toegepast en halfgeleiderinrichting verkregen met toepassing van de werkwijze.

Publications (1)

Publication Number Publication Date
BE711250A true BE711250A (ko) 1968-08-23

Family

ID=26644158

Family Applications (1)

Application Number Title Priority Date Filing Date
BE711250D BE711250A (ko) 1967-02-25 1968-02-23

Country Status (8)

Country Link
US (2) US3536600A (ko)
AT (1) AT300038B (ko)
BE (1) BE711250A (ko)
CH (2) CH517380A (ko)
DE (1) DE1696092C2 (ko)
FR (2) FR1562282A (ko)
GB (2) GB1226153A (ko)
NL (2) NL153947B (ko)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162254B (nl) * 1968-11-29 1979-11-15 Philips Nv Halfgeleiderinrichting voor het omzetten van mechanische spanningen in elektrische signalen en werkwijze voor het vervaardigen daarvan.
NL6910274A (ko) * 1969-07-04 1971-01-06
US4131524A (en) * 1969-11-24 1978-12-26 U.S. Philips Corporation Manufacture of semiconductor devices
DE2013546A1 (de) * 1970-03-20 1971-09-30 Siemens Ag Verfahren zur Herstellung isolierter Halbleiterbereiche
US3655540A (en) * 1970-06-22 1972-04-11 Bell Telephone Labor Inc Method of making semiconductor device components
US3642593A (en) * 1970-07-31 1972-02-15 Bell Telephone Labor Inc Method of preparing slices of a semiconductor material having discrete doped regions
US3661741A (en) * 1970-10-07 1972-05-09 Bell Telephone Labor Inc Fabrication of integrated semiconductor devices by electrochemical etching
JPS4936792B1 (ko) * 1970-10-15 1974-10-03
US3713922A (en) * 1970-12-28 1973-01-30 Bell Telephone Labor Inc High resolution shadow masks and their preparation
US3902979A (en) * 1974-06-24 1975-09-02 Westinghouse Electric Corp Insulator substrate with a thin mono-crystalline semiconductive layer and method of fabrication
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US3997381A (en) * 1975-01-10 1976-12-14 Intel Corporation Method of manufacture of an epitaxial semiconductor layer on an insulating substrate
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
US4115223A (en) * 1975-12-15 1978-09-19 International Standard Electric Corporation Gallium arsenide photocathodes
US4180439A (en) * 1976-03-15 1979-12-25 International Business Machines Corporation Anodic etching method for the detection of electrically active defects in silicon
GB1552268A (en) * 1977-04-01 1979-09-12 Standard Telephones Cables Ltd Semiconductor etching
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法
DE2917654A1 (de) * 1979-05-02 1980-11-13 Ibm Deutschland Anordnung und verfahren zum selektiven, elektrochemischen aetzen
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
EP0018556B1 (de) * 1979-05-02 1984-08-08 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US4554059A (en) * 1983-11-04 1985-11-19 Harris Corporation Electrochemical dielectric isolation technique
DE3486223T2 (de) * 1983-11-04 1994-03-31 Harris Corp Elektrochemische Technik für die Herstellung einer dielektrischen Isolationsstruktur.
FR2675824B1 (fr) * 1991-04-26 1994-02-04 Alice Izrael Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede.
EP0563625A3 (en) * 1992-04-03 1994-05-25 Ibm Immersion scanning system for fabricating porous silicon films and devices
DE69535361T2 (de) * 1994-07-26 2007-10-04 Koninklijke Philips Electronics N.V. Verfahren zur Herstellung einer Halbleitervorrichtung und eine Halbleitervorrichtung
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US6737360B2 (en) * 1999-12-30 2004-05-18 Intel Corporation Controlled potential anodic etching process for the selective removal of conductive thin films
US6709953B2 (en) * 2002-01-31 2004-03-23 Infineon Technologies Ag Method of applying a bottom surface protective coating to a wafer, and wafer dicing method
DE10235020B4 (de) * 2002-07-31 2004-08-26 Christian-Albrechts-Universität Zu Kiel Vorrichtung und Verfahren zum Ätzen großflächiger Halbleiterscheiben
CN102061474B (zh) * 2010-10-01 2012-06-27 绍兴旭昌科技企业有限公司 一种半导体晶圆的超厚度化学减薄方法
CN112442728B (zh) * 2020-12-02 2024-05-24 无锡市鹏振智能科技有限公司 一种旋转式电解抛光设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2939825A (en) * 1956-04-09 1960-06-07 Cleveland Twist Drill Co Sharpening, shaping and finishing of electrically conductive materials
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
USB161573I5 (ko) * 1961-12-22
DE1213056B (de) * 1962-08-16 1966-03-24 Siemens Ag Elektrolytisches AEtzverfahren zum Verkleinern von pn-UEbergangsflaechen und/oder zum Beseitigen von Oberflaechenstoerungen an pn-UEbergaengen bei Halbleiterkoerpern von Halbleiterbauelementen
US3254280A (en) * 1963-05-29 1966-05-31 Westinghouse Electric Corp Silicon carbide unipolar transistor
US3265599A (en) * 1963-06-25 1966-08-09 Litton Systems Inc Formation of grain boundary photoorienter by electrolytic etching

Also Published As

Publication number Publication date
GB1226153A (ko) 1971-03-24
CH517380A (de) 1971-12-31
DE1696092C2 (de) 1984-04-26
GB1225061A (en) 1971-03-17
CH513514A (de) 1971-09-30
DE1696084A1 (de) 1972-03-09
US3616345A (en) 1971-10-26
FR1562282A (ko) 1969-04-04
DE1696084B2 (de) 1972-12-28
NL6703013A (ko) 1968-08-26
DE1696092A1 (de) 1971-12-23
AT300038B (de) 1972-07-10
NL6703014A (ko) 1968-08-26
NL153947B (nl) 1977-07-15
FR1556569A (ko) 1969-02-07
US3536600A (en) 1970-10-27

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