BE709772A - - Google Patents
Info
- Publication number
- BE709772A BE709772A BE709772DA BE709772A BE 709772 A BE709772 A BE 709772A BE 709772D A BE709772D A BE 709772DA BE 709772 A BE709772 A BE 709772A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01039—Yttrium [Y]
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- H01L2924/01047—Silver [Ag]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6701136A NL6701136A (da) | 1967-01-25 | 1967-01-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE709772A true BE709772A (da) | 1968-07-23 |
Family
ID=19799110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE709772D BE709772A (da) | 1967-01-25 | 1968-01-23 |
Country Status (10)
Country | Link |
---|---|
US (1) | US3528090A (da) |
AT (1) | AT275609B (da) |
BE (1) | BE709772A (da) |
CH (1) | CH479162A (da) |
DE (1) | DE1614306C3 (da) |
ES (1) | ES349652A1 (da) |
FR (1) | FR1555930A (da) |
GB (1) | GB1204263A (da) |
NL (1) | NL6701136A (da) |
SE (1) | SE350648B (da) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638304A (en) * | 1969-11-06 | 1972-02-01 | Gen Motors Corp | Semiconductive chip attachment method |
BE790652A (fr) * | 1971-10-28 | 1973-02-15 | Siemens Ag | Composant a semi-conducteurs a connexions portantes |
US3740619A (en) * | 1972-01-03 | 1973-06-19 | Signetics Corp | Semiconductor structure with yieldable bonding pads having flexible links and method |
US3911474A (en) * | 1972-01-03 | 1975-10-07 | Signetics Corp | Semiconductor structure and method |
DE3806287A1 (de) * | 1988-02-27 | 1989-09-07 | Asea Brown Boveri | Aetzverfahren zur strukturierung einer mehrschicht-metallisierung |
JP2002521575A (ja) * | 1998-07-24 | 2002-07-16 | アンテルユニヴェルシテール・ミクロ−エレクトロニカ・サントリュム・ヴェー・ゼッド・ドゥブルヴェ | 導電パターンの電解メッキシステムとその電解メッキ方法 |
US6758958B1 (en) | 1998-07-24 | 2004-07-06 | Interuniversitair Micro-Elektronica Centrum | System and a method for plating of a conductive pattern |
US9524945B2 (en) | 2010-05-18 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with L-shaped non-metal sidewall protection structure |
US8377816B2 (en) * | 2009-07-30 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming electrical connections |
US8841766B2 (en) | 2009-07-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8324738B2 (en) | 2009-09-01 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned protection layer for copper post structure |
US8659155B2 (en) | 2009-11-05 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps |
US8610270B2 (en) | 2010-02-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and semiconductor assembly with lead-free solder |
US8441124B2 (en) | 2010-04-29 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8546254B2 (en) | 2010-08-19 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
KR102458034B1 (ko) | 2015-10-16 | 2022-10-25 | 삼성전자주식회사 | 반도체 패키지, 반도체 패키지의 제조방법, 및 반도체 모듈 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
US3408271A (en) * | 1965-03-01 | 1968-10-29 | Hughes Aircraft Co | Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates |
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1967
- 1967-01-25 NL NL6701136A patent/NL6701136A/xx unknown
- 1967-12-06 DE DE1614306A patent/DE1614306C3/de not_active Expired
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1968
- 1968-01-19 US US699228A patent/US3528090A/en not_active Expired - Lifetime
- 1968-01-22 AT AT61768A patent/AT275609B/de active
- 1968-01-22 CH CH98468A patent/CH479162A/de not_active IP Right Cessation
- 1968-01-22 SE SE00829/68A patent/SE350648B/xx unknown
- 1968-01-23 BE BE709772D patent/BE709772A/xx unknown
- 1968-01-23 ES ES349652A patent/ES349652A1/es not_active Expired
- 1968-01-24 GB GB3676/68A patent/GB1204263A/en not_active Expired
- 1968-01-25 FR FR1555930D patent/FR1555930A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL6701136A (da) | 1968-07-26 |
DE1614306C3 (de) | 1974-12-19 |
FR1555930A (da) | 1969-01-31 |
DE1614306A1 (de) | 1970-08-20 |
CH479162A (de) | 1969-09-30 |
DE1614306B2 (de) | 1974-05-16 |
AT275609B (de) | 1969-10-27 |
GB1204263A (en) | 1970-09-03 |
US3528090A (en) | 1970-09-08 |
ES349652A1 (es) | 1969-04-01 |
SE350648B (da) | 1972-10-30 |