BE709772A - - Google Patents
Info
- Publication number
- BE709772A BE709772A BE709772DA BE709772A BE 709772 A BE709772 A BE 709772A BE 709772D A BE709772D A BE 709772DA BE 709772 A BE709772 A BE 709772A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/01039—Yttrium [Y]
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- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6701136A NL6701136A (xx) | 1967-01-25 | 1967-01-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE709772A true BE709772A (xx) | 1968-07-23 |
Family
ID=19799110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE709772D BE709772A (xx) | 1967-01-25 | 1968-01-23 |
Country Status (10)
Country | Link |
---|---|
US (1) | US3528090A (xx) |
AT (1) | AT275609B (xx) |
BE (1) | BE709772A (xx) |
CH (1) | CH479162A (xx) |
DE (1) | DE1614306C3 (xx) |
ES (1) | ES349652A1 (xx) |
FR (1) | FR1555930A (xx) |
GB (1) | GB1204263A (xx) |
NL (1) | NL6701136A (xx) |
SE (1) | SE350648B (xx) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3638304A (en) * | 1969-11-06 | 1972-02-01 | Gen Motors Corp | Semiconductive chip attachment method |
BE790652A (fr) * | 1971-10-28 | 1973-02-15 | Siemens Ag | Composant a semi-conducteurs a connexions portantes |
US3740619A (en) * | 1972-01-03 | 1973-06-19 | Signetics Corp | Semiconductor structure with yieldable bonding pads having flexible links and method |
US3911474A (en) * | 1972-01-03 | 1975-10-07 | Signetics Corp | Semiconductor structure and method |
DE3806287A1 (de) * | 1988-02-27 | 1989-09-07 | Asea Brown Boveri | Aetzverfahren zur strukturierung einer mehrschicht-metallisierung |
AU5141999A (en) * | 1998-07-24 | 2000-02-21 | Interuniversitair Micro-Elektronica Centrum | A system and a method for plating of a conductive pattern |
US6758958B1 (en) | 1998-07-24 | 2004-07-06 | Interuniversitair Micro-Elektronica Centrum | System and a method for plating of a conductive pattern |
US9524945B2 (en) | 2010-05-18 | 2016-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with L-shaped non-metal sidewall protection structure |
US8377816B2 (en) * | 2009-07-30 | 2013-02-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming electrical connections |
US8841766B2 (en) | 2009-07-30 | 2014-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8324738B2 (en) | 2009-09-01 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned protection layer for copper post structure |
US8659155B2 (en) | 2009-11-05 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps |
US8610270B2 (en) | 2010-02-09 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and semiconductor assembly with lead-free solder |
US8441124B2 (en) | 2010-04-29 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cu pillar bump with non-metal sidewall protection structure |
US8546254B2 (en) | 2010-08-19 | 2013-10-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mechanisms for forming copper pillar bumps using patterned anodes |
KR102458034B1 (ko) | 2015-10-16 | 2022-10-25 | 삼성전자주식회사 | 반도체 패키지, 반도체 패키지의 제조방법, 및 반도체 모듈 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386894A (en) * | 1964-09-28 | 1968-06-04 | Northern Electric Co | Formation of metallic contacts |
US3408271A (en) * | 1965-03-01 | 1968-10-29 | Hughes Aircraft Co | Electrolytic plating of metal bump contacts to semiconductor devices upon nonconductive substrates |
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1967
- 1967-01-25 NL NL6701136A patent/NL6701136A/xx unknown
- 1967-12-06 DE DE1614306A patent/DE1614306C3/de not_active Expired
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1968
- 1968-01-19 US US699228A patent/US3528090A/en not_active Expired - Lifetime
- 1968-01-22 CH CH98468A patent/CH479162A/de not_active IP Right Cessation
- 1968-01-22 SE SE00829/68A patent/SE350648B/xx unknown
- 1968-01-22 AT AT61768A patent/AT275609B/de active
- 1968-01-23 BE BE709772D patent/BE709772A/xx unknown
- 1968-01-23 ES ES349652A patent/ES349652A1/es not_active Expired
- 1968-01-24 GB GB3676/68A patent/GB1204263A/en not_active Expired
- 1968-01-25 FR FR1555930D patent/FR1555930A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3528090A (en) | 1970-09-08 |
AT275609B (de) | 1969-10-27 |
ES349652A1 (es) | 1969-04-01 |
NL6701136A (xx) | 1968-07-26 |
DE1614306A1 (de) | 1970-08-20 |
SE350648B (xx) | 1972-10-30 |
GB1204263A (en) | 1970-09-03 |
DE1614306C3 (de) | 1974-12-19 |
DE1614306B2 (de) | 1974-05-16 |
FR1555930A (xx) | 1969-01-31 |
CH479162A (de) | 1969-09-30 |