BE703937A - - Google Patents

Info

Publication number
BE703937A
BE703937A BE703937DA BE703937A BE 703937 A BE703937 A BE 703937A BE 703937D A BE703937D A BE 703937DA BE 703937 A BE703937 A BE 703937A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE703937A publication Critical patent/BE703937A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE703937D 1966-09-23 1967-09-15 BE703937A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58158066A 1966-09-23 1966-09-23

Publications (1)

Publication Number Publication Date
BE703937A true BE703937A (xx) 1968-02-01

Family

ID=24325740

Family Applications (1)

Application Number Title Priority Date Filing Date
BE703937D BE703937A (xx) 1966-09-23 1967-09-15

Country Status (5)

Country Link
US (1) US3469155A (xx)
BE (1) BE703937A (xx)
DE (1) DE1639052A1 (xx)
FR (1) FR1551956A (xx)
GB (1) GB1166568A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1918222A1 (de) * 1968-04-10 1970-02-05 Rca Corp Feldeffekttransistor mit isolierter Steuerelektrode

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3936862A (en) * 1968-10-02 1976-02-03 National Semiconductor Corporation MISFET and method of manufacture
US3638197A (en) * 1968-12-31 1972-01-25 Texas Instruments Inc Electronic printing input-output station
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
JPS5115394B1 (xx) * 1969-11-20 1976-05-17
JPS5113010Y1 (xx) * 1969-12-01 1976-04-07
JPS5122794B1 (xx) * 1970-06-24 1976-07-12
US3694704A (en) * 1970-09-28 1972-09-26 Sony Corp Semiconductor device
US3983023A (en) * 1971-03-30 1976-09-28 Ibm Corporation Integrated semiconductor circuit master-slice structure in which the insulation layer beneath unused contact terminals is free of short-circuits
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JPS5944862A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 半導体装置
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
IT1186338B (it) * 1985-10-29 1987-11-26 Sgs Microelettronica Spa Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione
JP2786652B2 (ja) * 1989-02-28 1998-08-13 株式会社東芝 半導体装置
CN100459118C (zh) * 2004-12-13 2009-02-04 美国博通公司 高压设备中的静电放电保护
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US20060220168A1 (en) * 2005-03-08 2006-10-05 Monolithic Power Systems, Inc. Shielding high voltage integrated circuits

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3230429A (en) * 1962-01-09 1966-01-18 Westinghouse Electric Corp Integrated transistor, diode and resistance semiconductor network
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3272989A (en) * 1963-12-17 1966-09-13 Rca Corp Integrated electrical circuit
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
US3340598A (en) * 1965-04-19 1967-09-12 Teledyne Inc Method of making field effect transistor device
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1918222A1 (de) * 1968-04-10 1970-02-05 Rca Corp Feldeffekttransistor mit isolierter Steuerelektrode

Also Published As

Publication number Publication date
DE1639052A1 (de) 1969-10-02
US3469155A (en) 1969-09-23
GB1166568A (en) 1969-10-08
FR1551956A (xx) 1969-01-03

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