BE696250A - - Google Patents

Info

Publication number
BE696250A
BE696250A BE696250DA BE696250A BE 696250 A BE696250 A BE 696250A BE 696250D A BE696250D A BE 696250DA BE 696250 A BE696250 A BE 696250A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE696250A publication Critical patent/BE696250A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/611Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
BE696250D 1966-03-30 1967-03-29 BE696250A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2048966 1966-03-30

Publications (1)

Publication Number Publication Date
BE696250A true BE696250A (en:Method) 1967-09-01

Family

ID=12028544

Family Applications (1)

Application Number Title Priority Date Filing Date
BE696250D BE696250A (en:Method) 1966-03-30 1967-03-29

Country Status (7)

Country Link
US (1) US3453506A (en:Method)
BE (1) BE696250A (en:Method)
CH (1) CH476399A (en:Method)
FR (1) FR1517242A (en:Method)
GB (1) GB1132810A (en:Method)
NL (1) NL6704306A (en:Method)
SE (1) SE313879B (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
SE456291B (sv) * 1980-02-22 1988-09-19 Rca Corp Vertikal mosfet-anordning innefattande en over kollektoromradet belegen skermelektrod for minimering av miller- kapacitansen och stromfortrengningen
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US10510600B1 (en) * 2018-07-11 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Shared contact structure and methods for forming the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333115A (en) * 1963-11-20 1967-07-25 Toko Inc Field-effect transistor having plural insulated-gate electrodes that vary space-charge voltage as a function of drain voltage
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3363166A (en) * 1965-04-03 1968-01-09 Hitachi Ltd Semiconductor modulator

Also Published As

Publication number Publication date
GB1132810A (en) 1968-11-06
CH476399A (de) 1969-07-31
FR1517242A (fr) 1968-03-15
US3453506A (en) 1969-07-01
DE1614141B2 (de) 1970-12-10
SE313879B (en:Method) 1969-08-25
NL6704306A (en:Method) 1967-10-02
DE1614141A1 (de) 1970-05-27

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MATSUSHITA ELECTRONICS CORP.

Effective date: 19840329