BE696173A - - Google Patents

Info

Publication number
BE696173A
BE696173A BE696173DA BE696173A BE 696173 A BE696173 A BE 696173A BE 696173D A BE696173D A BE 696173DA BE 696173 A BE696173 A BE 696173A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE696173A publication Critical patent/BE696173A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
BE696173D 1966-03-29 1967-03-28 BE696173A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021266 1966-03-29

Publications (1)

Publication Number Publication Date
BE696173A true BE696173A (en:Method) 1967-09-01

Family

ID=12020842

Family Applications (1)

Application Number Title Priority Date Filing Date
BE696173D BE696173A (en:Method) 1966-03-29 1967-03-28

Country Status (8)

Country Link
US (1) US3764864A (en:Method)
BE (1) BE696173A (en:Method)
CH (1) CH475653A (en:Method)
DE (1) DE1614145A1 (en:Method)
FR (1) FR1517240A (en:Method)
GB (1) GB1186421A (en:Method)
NL (1) NL150950B (en:Method)
SE (1) SE307198B (en:Method)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882529A (en) * 1967-10-06 1975-05-06 Texas Instruments Inc Punch-through semiconductor diodes
DE1919406C3 (de) * 1968-04-23 1981-11-05 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
NL162792C (nl) * 1969-03-01 1980-06-16 Philips Nv Veldeffecttransistor met geisoleerde stuurelektrode, die met een beveiligingsdiode met ten minste een pn-overgang is verbonden.
NL161924C (nl) * 1969-07-03 1980-03-17 Philips Nv Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
DE2109915A1 (de) * 1971-03-02 1972-09-07 Ibm Deutschland Oberflächengesteuerte Halbleiteranordnung
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
US4890143A (en) * 1988-07-28 1989-12-26 General Electric Company Protective clamp for MOS gated devices
BE1007672A3 (nl) * 1993-10-27 1995-09-12 Philips Electronics Nv Hoogfrequent halfgeleiderinrichting met beveiligingsinrichting.
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8476684B2 (en) * 2010-09-29 2013-07-02 Analog Devices, Inc. Field effect transistors having improved breakdown voltages and methods of forming the same
US10199482B2 (en) 2010-11-29 2019-02-05 Analog Devices, Inc. Apparatus for electrostatic discharge protection
US8803193B2 (en) 2011-05-11 2014-08-12 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US8816389B2 (en) 2011-10-21 2014-08-26 Analog Devices, Inc. Overvoltage and/or electrostatic discharge protection device
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE632998A (en:Method) * 1962-05-31
NL298671A (en:Method) * 1963-10-01
US3278853A (en) * 1963-11-21 1966-10-11 Westinghouse Electric Corp Integrated circuits with field effect transistors and diode bias means
US3408543A (en) * 1964-06-01 1968-10-29 Hitachi Ltd Combination capacitor and fieldeffect transistor
US3403270A (en) * 1965-05-10 1968-09-24 Gen Micro Electronics Inc Overvoltage protective circuit for insulated gate field effect transistor
US3313958A (en) * 1965-09-03 1967-04-11 Gen Dynamics Corp Gate circuitry utilizing mos type field effect transistors
US3395290A (en) * 1965-10-08 1968-07-30 Gen Micro Electronics Inc Protective circuit for insulated gate metal oxide semiconductor fieldeffect device
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3440503A (en) * 1967-05-31 1969-04-22 Westinghouse Electric Corp Integrated complementary mos-type transistor structure and method of making same

Also Published As

Publication number Publication date
FR1517240A (fr) 1968-03-15
DE1614145A1 (de) 1970-06-25
NL6704262A (en:Method) 1967-10-02
SE307198B (en:Method) 1968-12-23
GB1186421A (en) 1970-04-02
NL150950B (nl) 1976-09-15
DE1614145B2 (en:Method) 1970-10-29
CH475653A (de) 1969-07-15
US3764864A (en) 1973-10-09

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MATSUSHITA ELECTRONICS CORP.

Effective date: 19840328